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    APM3112N

    Abstract: apm31
    Text: APM3112NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =9.5mΩ (typ.) @ VGS=10V G RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices Available


    Original
    PDF APM3112NU 0V/50A, O-252-3 APM3112N O-252-3 JESD-22, apm31