MOSFET MARKING LY Search Results

MOSFET MARKING LY Result Highlights (5)

Part	Manufacturer	Description
DS0026H/883	Rochester Electronics LLC	DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA)
ICL7667MTV/883B	Rochester Electronics LLC	ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC)
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

MOSFET MARKING LY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si3402 F U L LY - I N T E G R A T E D 8 0 2 . 3 - C O M P LI A N T P O E P D I N T E R F A C E AND LOW-EMI SWITCHING REGULATOR Features  IEEE 802.3 standard-compliant solution, including pre-standard legacy PoE support  Highly-integrated IC enables	Original	Si3402	PDF
KEYPAD 4X3 Abstract: 4x3 matrix keypad KEYPAD 4X3 SWITCH 3x4 Keypad keypad 3x4 3x4 matrix keypad 4x3 keypad KEYPAD 5x4 keypad 3x4 matrix datasheet keypad 3x4 Text: SERIES 37F CUSTOM PIEZO K E Y PA D S AND PUSHBUTTONS V A N D A L R V I R T U A L LY E S I S T A N T I A N D N D E S T R U C T A B L E Function Section View Advantages Technology The switch function is based on the the physical principal of the Piezo effect. The external push force increase or	Original		PDF
Untitled Abstract: No abstract text available Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching	Original	FDD850N10LD	PDF
Untitled Abstract: No abstract text available Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching	Original	FDD1600N10ALZD	PDF
IRL3103L Abstract: IRL3715Z IRL3715ZL IRL3715ZS Text: PD - 95581 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF	Original	IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF IRL3715ZS O-220AB IRL3715Z O-262 IRL3715ZL AN-994. O-220AB IRL3103L IRL3715Z IRL3715ZL IRL3715ZS	PDF
Untitled Abstract: No abstract text available Text: PD - 95581 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF	Original	IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF IRL3715ZS O-220AB IRL3715Z O-262 IRL3715ZL AN-994. O-220AB	PDF
FET marking code Abstract: IRF Power MOSFET code marking IRL3103L IRL3715Z IRL3715ZL IRL3715ZS Text: PD - 95581 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF	Original	IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF IRL3715ZS O-220AB IRL3715Z O-262 IRL3715ZL AN-994. O-220AB FET marking code IRF Power MOSFET code marking IRL3103L IRL3715Z IRL3715ZL IRL3715ZS	PDF
IRL3103L Abstract: IRL3714Z IRL3714ZL IRL3714ZS Text: PD - 95661 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF	Original	IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF O-220AB IRL3714Z IRL3714ZS O-262 IRL3714ZL O-220AB AN-994. IRL3103L IRL3714Z IRL3714ZL IRL3714ZS	PDF
Untitled Abstract: No abstract text available Text: FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 mΩ Features General Description Max rDS on = 75 mΩ at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process,	Original	FDZ371PZ FDZ371PZ	PDF
Untitled Abstract: No abstract text available Text: PD - 95661 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF	Original	IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF O-220AB IRL3714Z IRL3714ZS O-262 IRL3714ZL AN-994. O-220AB	PDF
S10V siemens Abstract: No abstract text available Text: SIPMOS P Channel MOSFET BSS84 • SIPMOS - enhancement mode • Drain-source voltage Ifc* = -50V • Continuous drain current l B = -0.13A • Drain-source on-resistance • Total power dissipation «• .} = 1 0 .0 0 PD = 0.36W Type Marking Ordering cod e for	OCR Scan	BSS84 62702-S568 80fis\ S10V siemens	PDF
K2094 Abstract: marking 82T 0014b34 2SK2094 2SK2094F5 Text: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm • available in C P T F5 package • p ackage marking: K2094-A-Q, w here ★ is hFE code and □ is lot num ber • low on-resistance 2SK2094 (C PT F5) • fast switching speed • w ide S O A (S a fe O perating A rea)	OCR Scan	2SK2094F5 K2094 2SK2094 0G14ti3b 0014b37 marking 82T 0014b34 2SK2094 2SK2094F5	PDF
TRANSISTOR mosfet BF998 Abstract: BF998 depletion BF998 UCB343 dual gate mosfet Text: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor	OCR Scan	BF998 OT143 MCB346 MCB345 TRANSISTOR mosfet BF998 BF998 depletion UCB343 dual gate mosfet	PDF
PHILIPS MOSFET MARKING Abstract: BF998R UBB087 Text: 00E3tM3 474 • Philips Semiconductors Data sheet status Product specification date of issue O ctob e r 1990 FEATURES • Short channel transistor with high ratio lYfs \|/C S. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor	OCR Scan	00Z3fc BF998R OT143R PHILIPS MOSFET MARKING UBB087	PDF

FS12KM4A Abstract: FS12KM FS12UM-4A FS12KM-4A T70 N03 412 igbt 200V 4A r70 sop marking code mp SOT-89 mosfet marking l FS16KM-4 Text: K W E R E X StlOrt FONTI Ddtd Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V and 2.5V SOP-8 n-channel and p-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics	OCR Scan	FY10AAJ-03 FY7AAJ-03 FY3ABJ-03 FY8ABJ-03 FY5ACH-03A FY6ACH-02A 72R4L O-22QS 72T4b21 FS12KM4A FS12KM FS12UM-4A FS12KM-4A T70 N03 412 igbt 200V 4A r70 sop marking code mp SOT-89 mosfet marking l FS16KM-4	PDF
B1470 Abstract: K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS Text: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 • V d s s . 2 .8 ± 0 . 2 250V • rDS ON (MAX) . 0 .1 9 Q	OCR Scan	FS20KM-5 -220FN T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S B1470 K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS	PDF
FS12KM Abstract: FS12KM-5 Text: MITSUBISHI Neh POWER MOSFET FS12KM-5 HIGH-SPEED SWITCHING USE FS12KM-5 OUTLINE DRAWING • V dss . Dimensions in mm 250V 0.40Q • rDS ON (MAX) . • I d . 12A	OCR Scan	FS12KM-5 O-220FN O-220S, MAX240Â FS12KM FS12KM-5	PDF
B1470 Abstract: FS20KM-5 K775 M-1510 MAX240 FS 8201 mitsubishi fs20km-5 Text: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 • V dss . 2.8 ± 0 .2 250V • rDS ON (MAX) . 0 .1 9Q • Id	OCR Scan	FS20KM-5 -220FN MAX240Â MAX60S O-22Q, O-220FN, O-220C, O-220S B1470 FS20KM-5 K775 M-1510 MAX240 FS 8201 mitsubishi fs20km-5	PDF
FS16UM-5 Abstract: FS16UM5 k775 MAX240 Text: MITSUBISHI Neh POWER MOSFET FS16UM-5 HIGH-SPEED SWITCHING USE • V ds s .250V • rDS ON (M AX) .0.25Í2 • Id . 16A	OCR Scan	FS16UM-5 O-220 T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S FS16UM-5 FS16UM5 k775 MAX240	PDF
FS16KM-5 Abstract: FS16KM5 diode 3005 2 XK power 220 Text: MITSUBISHI Neh POWER MOSFET FS16KM-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ±0.3 • V dss . 2.8 ±0.2 -250V • rDS ON (MAX) . 0.25Í2 • Id . 16A	OCR Scan	FS16KM-5 -250V TQ-220FN O-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, FS16KM5 diode 3005 2 XK power 220	PDF
FS10UM-5 Abstract: 3DG5 FS10UM5 K775 MAX240 3d fs 45 1.5A 150V power mosfet Text: MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 OUTLINE DRAWING Dimensions in mm 0@ © © D © • V d s s . GATE DRAIN SOURCE DRAIN 250V • rDS (ON (MAX) .0 .5 2 Í2	OCR Scan	FS10UM-5 O-220 T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S FS10UM-5 3DG5 FS10UM5 K775 MAX240 3d fs 45 1.5A 150V power mosfet	PDF
FS12KM-5 Abstract: FS12KM FS12KM5 K775 N channel mosfet TO220 MAX240 14Ml M-1510 3020H Text: MITSUBISHI Neh POWER MOSFET FS12KM-5 HIGH-SPEED SWITCHING USE FS12KM-5 OUTLINE DRAWING • V dss . Dimensions in mm 250V 0.40Q • rDS ON (MAX) . • I d . 12A	OCR Scan	FS12KM-5 O-220FN MAX240Â MAX60S O-22Q, O-220FN, O-220C, O-220S FS12KM-5 FS12KM FS12KM5 K775 N channel mosfet TO220 MAX240 14Ml M-1510 3020H	PDF
B1470 Abstract: FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS Text: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ±0.2 4» • V d s s . -2 5 0 V • rDS ON (MAX) . 0.52Q	OCR Scan	FS10KM-5 O-220FN T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S B1470 FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS	PDF
K775 Abstract: B1470 FS20UM-5 sk 3005 FS20UM MAX240 mitsubishi marking diode ct 2405 Text: MITSUBISHI Neh POWER MOSFET FS20UM-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING FS20UM-5 Dimensions in mm 4.5 1.3 0.5 2.6 ffi o@ © © GATE © DRAIN © SOURCE ® DRAIN • Vd s s •2 5 0 V . • rDS ON (MAX) 0 . 1 9 Í2 • I D .	OCR Scan	FS20UM-5 O-220 T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S K775 B1470 FS20UM-5 sk 3005 FS20UM MAX240 mitsubishi marking diode ct 2405	PDF

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MOSFET MARKING LY Search Results

MOSFET MARKING LY Result Highlights (5)

MOSFET MARKING LY Datasheets Context Search

Untitled

KEYPAD 4X3

Untitled

Untitled

IRL3103L

Untitled

FET marking code

IRL3103L

Untitled

Untitled

S10V siemens

K2094

TRANSISTOR mosfet BF998

PHILIPS MOSFET MARKING

FS12KM4A

B1470

FS12KM

B1470

FS16UM-5

FS16KM-5

FS10UM-5

FS12KM-5

B1470

K775