MIP006
Abstract: No abstract text available
Text: MIP0060ME Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 7 Package SSOP016-P-0300 Marking MIP006 A．ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C NO. 1 Item VCC Voltage
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MIP0060ME
SSOP016-P-0300
MIP006
40companies
MIP01*
MIP02*
MIP00*
MIP55*
MIP816/826
MIP52*
MIP006
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p421 coupler
Abstract: p421 Photocoupler P521 Photocoupler Toshiba P521 Photocoupler P521 G p521 gb p521 gr gr p421 toshiba tlp 759 datasheet TLP521 4pin ic
Text: 4. Supplementary Information 4–1 Current Transfer Ratio CTR , LED Trigger Current (IFT) Ranking and Marking Unit: mm Standard rank classifications are applied for the CTR of transistor-type photocouplers and for the IFT of MOSFET, SCR, Triac-type photocouplers. Indicative product markings corresponding to rank names are as shown below.
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TLP180
TLP181
TLP280
TLP280-4
TLP281
TLP281-4
TLP321
TLP321-2/-3/-4
IEC435/
IEC65/
p421 coupler
p421 Photocoupler
P521 Photocoupler
Toshiba P521 Photocoupler
P521 G
p521 gb
p521 gr
gr p421
toshiba tlp 759 datasheet
TLP521 4pin ic
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TP0610K-T1-E
Abstract: TP0610K-T1-E3
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TP0610K-T1-E
TP0610K-T1-E3
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VISHAY SOT LOT CODE
Abstract: marking 6k sot-23 package sot23 footprint TP0610K-T1-E3
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K
2002/95/EC
11-Mar-11
VISHAY SOT LOT CODE
marking 6k sot-23 package
sot23 footprint
TP0610K-T1-E3
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Untitled
Abstract: No abstract text available
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K-T1-E3
TP0610K-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.)
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TSM6N50
ITO-220
O-251
O-252
TSM6N50CI
50pcs
TSM6N50CP
TSM6N50CH
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TSM60N900CP
Abstract: No abstract text available
Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM60N900
ITO-220
O-251
O-252
TSM60N900CI
50pcs
TSM60N900CH
75pcs
TSM60N900CP
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Untitled
Abstract: No abstract text available
Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM60N900
ITO-220
O-251
O-252
TSM60N900CI
50pcs
TSM60N900CH
75pcs
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Untitled
Abstract: No abstract text available
Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM70N600
ITO-220
O-251
O-252
TSM70N600CI
50pcs
TSM70N600CH
75pcs
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Untitled
Abstract: No abstract text available
Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM70N900
ITO-220
O-251
O-252
TSM70N900CI
50pcs
TSM70N900CH
75pcs
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Untitled
Abstract: No abstract text available
Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM70N600
ITO-220
O-251
O-252
TSM70N600CI
50pcs
TSM70N600CH
75pcs
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TSM60N600CP
Abstract: No abstract text available
Text: TSM60N600 600V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.6 Ω Qg 13 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM60N600
ITO-220
O-251
O-252
TSM60N600CI
50pcs
TSM60N600CH
75pcs
TSM60N600CP
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Untitled
Abstract: No abstract text available
Text: TSM70N380 700V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.38 Ω Qg 19.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM70N380
ITO-220
O-251
O-252
TSM70N380CI
50pcs
TSM70N380CH
75pcs
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TSM60N380CP
Abstract: TSM60N380CH TSM60N380CI
Text: TSM60N380 600V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.38 Ω Qg 20.5 nC TO-252 (DPAK) Block Diagram Features ● ● Super-Junction technology
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TSM60N380
ITO-220
O-251
O-252
TSM60N380CI
50pcs
TSM60N380CH
75pcs
TSM60N380CP
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Untitled
Abstract: No abstract text available
Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● ● ● ●
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TSM70N900
ITO-220
O-251
O-252
TSM70N900CI
50pcs
TSM70N900CH
75pcs
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Untitled
Abstract: No abstract text available
Text: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 800 V RDS on (max) 1.05 Ω Qg 53 nC Features Block Diagram ● Low RDS(ON) 1.05Ω (Max.) ● Low gate charge typical @ 53nC (Typ.)
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TSM10N80
O-220
ITO-220
50pcs
TSM10N80CZ
TSM10N80CI
900ppm
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Untitled
Abstract: No abstract text available
Text: TSM70N10 100V N-Channel Power MOSFET TO-252 DPAK TO-251S (IPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 100 V RDS(on)(max) 13 mΩ Qg 145 nC Block Diagram Features ● ● ● Low On-Resistance Low Input Capacitance
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TSM70N10
O-252
O-251S
TSM70N10CP
TSM70N10CH
75pcs
900ppm
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N-Channel
Abstract: No abstract text available
Text: TSM600N25E 250V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 250 V RDS(on)(max) 0.6 Ω Qg 8.4 nC Features ● ● Block Diagram 100% avalanche tested Improved ESD performance
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TSM600N25E
O-251
O-252
TSM600N25ECH
75pcs
TSM600N25ECP
900ppm
N-Channel
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IRLR9343
Abstract: IRLU9343 IRLU9343-701
Text: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency
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IRLR9343
IRLU9343
IRLU9343-701
AN-994
IRLR9343
IRLU9343
IRLU9343-701
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irlru9343
Abstract: IRLR9343 55v audio amplifier IRLU9343 IRLU9343-701 marking code 19B
Text: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency
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IRLR9343
IRLU9343
IRLU9343-701
AN-994
irlru9343
IRLR9343
55v audio amplifier
IRLU9343
IRLU9343-701
marking code 19B
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Untitled
Abstract: No abstract text available
Text: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency
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IRLR9343
IRLU9343
IRLU9343-701
AN-994
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IRLR4343
Abstract: IRLU4343 IRLU4343-701
Text: PD - 95851 DIGITAL AUDIO MOSFET IRLR4343 IRLU4343 IRLU4343-701 Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency
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IRLR4343
IRLU4343
IRLU4343-701
AN-994
IRLR4343
IRLU4343
IRLU4343-701
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IRLU4343-701
Abstract: IRLR4343 IRLU4343
Text: PD - 95851 DIGITAL AUDIO MOSFET IRLR4343 IRLU4343 IRLU4343-701 Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency
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IRLR4343
IRLU4343
IRLU4343-701
AN-994
IRLU4343-701
IRLR4343
IRLU4343
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S10V siemens
Abstract: No abstract text available
Text: SIPMOS P Channel MOSFET BSS84 • SIPMOS - enhancement mode • Drain-source voltage Ifc* = -50V • Continuous drain current l B = -0.13A • Drain-source on-resistance • Total power dissipation «• .} = 1 0 .0 0 PD = 0.36W Type Marking Ordering cod e for
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BSS84
62702-S568
80fis\
S10V siemens
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