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    MOSFET LOW VOLTAGE VGS Search Results

    MOSFET LOW VOLTAGE VGS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET LOW VOLTAGE VGS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF7820

    Abstract: N mosfet 100v 500A 20V P-Channel Power MOSFET 500A dap6
    Text: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


    Original     		PDF IRF7820PbF 155mH, IRF7820 N mosfet 100v 500A 20V P-Channel Power MOSFET 500A dap6

    IRF8734PBF

    Abstract: IRF8734TRPBF
    Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


    Original     		PDF IRF8734PbF 10formation: IRF8734PBF IRF8734TRPBF

    IRF7862

    Abstract: IRF7862PBF EIA-541
    Text: PD - 97275A IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


    Original     		PDF 7275A IRF7862PbF IRF7862 IRF7862PBF EIA-541

    IRF7836PBF

    Abstract: No abstract text available
    Text: PD - 97171 IRF7836PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


    Original     		PDF IRF7836PbF EIA-481 EIA-541. IRF7836PBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96013A IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


    Original     		PDF 6013A IRF7832ZPbF EIA-481 EIA-541.

    IRF8113

    Abstract: F7101 IRF7101
    Text: PD - 94637 IRF8113 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


    Original     		PDF IRF8113 EIA-481 EIA-541. IRF8113 F7101 IRF7101

    IRF7456

    Abstract: No abstract text available
    Text: PD- 93840C IRF7456 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l Benefits Ultra-Low RDS on at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage


    Original     		PDF 93840C IRF7456 EIA-481 EIA-541. IRF7456

    IRF7455

    Abstract: 24V 10A SMPS ic
    Text: PD- 93842B IRF7455 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l Benefits Ultra-Low RDS on at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage


    Original     		PDF 93842B IRF7455 Curr252-7105 IRF7455 24V 10A SMPS ic

    IRF7456

    Abstract: No abstract text available
    Text: PD- 93840B IRF7456 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l Benefits Ultra-Low RDS on at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage


    Original     		PDF 93840B IRF7456 Curren252-7105 IRF7456

    Untitled

    Abstract: No abstract text available
    Text: 2SK1006-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54


    Original     		PDF 2SK1006-01MR O-220F15 SC-67

    100A Mosfet

    Abstract: 300V regulator Fuji Electric MOSFET 300V mosfet power amplifier TO-220F15 125 diode forward converter Zero-Gate Voltage Drain Current 2SK1006-01MR
    Text: 2SK1006-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54


    Original     		PDF 2SK1006-01MR O-220F15 SC-67 100A Mosfet 300V regulator Fuji Electric MOSFET 300V mosfet power amplifier TO-220F15 125 diode forward converter Zero-Gate Voltage Drain Current 2SK1006-01MR

    2SK2100

    Abstract: 600V 2A MOSFET N-channel 3,3
    Text: 2SK2100-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54


    Original     		PDF 2SK2100-01MR O-220F15 SC-67 2SK2100 600V 2A MOSFET N-channel 3,3

    2SK1917

    Abstract: No abstract text available
    Text: 2SK1917-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-II SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54


    Original     		PDF 2SK1917-MR O-220F15 SC-67 2SK1917

    Untitled

    Abstract: No abstract text available
    Text: 2SK2022-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54


    Original     		PDF 2SK2022-01MR O-220F15 SC-67 22-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2253-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54


    Original     		PDF 2SK2253-01MR O-220F15 SC-67

    Untitled

    Abstract: No abstract text available
    Text: IC IC MOSFET SMD Type Product specification KI4390DY Features Extremely Low Qgd WFET Technology for Switching Losses TrenchFETTM Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TJ = 150


    Original     		PDF KI4390DY

    2SK1985

    Abstract: No abstract text available
    Text: 2SK1985-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications Switching regulators


    Original     		PDF 2SK1985-01MR O-220F15 SC-67 2SK1985

    2SK1944-01

    Abstract: No abstract text available
    Text: 2SK1944-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators


    Original     		PDF 2SK1944-01 SC-65 2SK1944-01

    2SK1936

    Abstract: No abstract text available
    Text: 2SK1936-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators


    Original     		PDF 2SK1936-01 SC-65 2SK1936

    Untitled

    Abstract: No abstract text available
    Text: 2SK2023-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators


    Original     		PDF 2SK2023-01 O-220AB SC-46

    Untitled

    Abstract: No abstract text available
    Text: 2SK1008-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220AB Applications Switching regulators UPS DC-DC converters


    Original     		PDF 2SK1008-01 O-220AB SC-46

    2SK2002-01MR

    Abstract: No abstract text available
    Text: 2SK2002-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications Switching regulators


    Original     		PDF 2SK2002-01MR O-220F15 SC-67 2SK2002-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2019-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators


    Original     		PDF 2SK2019-01 O-220AB SC-46

    2SK146

    Abstract: No abstract text available
    Text: Ordering num ber: EN4892 _ FX852 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications Features • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching and Iow-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates


    OCR Scan     		PDF EN4892 FX852 FX852 2SK1467 SB07-03P, 2SK146