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    MOSFET IRFP240 Search Results

    MOSFET IRFP240 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRFP240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP240 transistor

    Abstract: No abstract text available
    Text: IRFP240 Data Sheet Title FP2 bt A, 0V, 80 m, 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFP240 IRFP240 transistor

    IRFP240

    Abstract: irfp240 transistor TA17422 TB334
    Text: IRFP240 Data Sheet January 2002 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP240 TA17422. O-247 200opment. IRFP240 irfp240 transistor TA17422 TB334

    IRFP240

    Abstract: TA17422 TB334
    Text: IRFP240 Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP240 TA17422. O-247 IRFP240 TA17422 TB334

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    ckt diagram of rf home security system

    Abstract: LME49830TB LME49830 amplifier irfp240 Vbe multiplier irfp240 RCA Transistor "Audio Power Amplifier" Application Note 2142-0 100v mosfet AUDIO AMPLIFIER CIRCUIT DIAGRAM ERO tantalum
    Text: LME49830 LME49830 Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute Literature Number: SNAS396C LME49830 Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute General Description Key Specifications The LME49830 is a high fidelity audio power amplifier input


    Original     		PDF LME49830 LME49830 SNAS396C ckt diagram of rf home security system LME49830TB amplifier irfp240 Vbe multiplier irfp240 RCA Transistor "Audio Power Amplifier" Application Note 2142-0 100v mosfet AUDIO AMPLIFIER CIRCUIT DIAGRAM ERO tantalum

    IRF510N

    Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
    Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5


    Original     		PDF MS-012AA TS-001AA MO-169AB RF1K49090 RF1K49093 RF1K49092 RF3S49092SM RF3V49092 RF1K49223 RF1K49088 IRF510N MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220

    IRFP240B

    Abstract: No abstract text available
    Text: IRFP240B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFP240B IRFP240B

    IRFP driver

    Abstract: IRFP240B
    Text: IRFP240B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFP240B IRFP driver IRFP240B

    IRFP240A

    Abstract: No abstract text available
    Text: IRFP240A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		PDF IRFP240A IRFP240A

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary

    irfp240

    Abstract: No abstract text available
    Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP240, SiHFP240 O-247 O-247 O-220 12-Mar-07 irfp240

    Untitled

    Abstract: No abstract text available
    Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP240, SiHFP240 2002/95/EC O-247AC O-247AC O-220trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    IRFP240

    Abstract: paralleling SiHFP240 sihfp240-e3
    Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP240, SiHFP240 O-247 O-247 O-220 O-218 18-Jul-08 IRFP240 paralleling sihfp240-e3

    IRFP240PBF

    Abstract: No abstract text available
    Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP240, SiHFP240 2002/95/EC O-247AC O-247AC O-220hay 11-Mar-11 IRFP240PBF

    IRFP240

    Abstract: No abstract text available
    Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP240, SiHFP240 O-247AC O-220AB O-247AC O-218 11-Mar-11 IRFP240

    Untitled

    Abstract: No abstract text available
    Text: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRFP240 O-247 180i2

    IRFP240

    Abstract: 75150TC
    Text: PD-9.444C International «»Rectifier IRFP240 HEXFEr Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Centra! Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description DATA SHEETS


    OCR Scan     		PDF IRFP240 O-247 O-220 O-218 75150TC

    Untitled

    Abstract: No abstract text available
    Text: IRFP240A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VDS= 200V ■ B V dss =


    OCR Scan     		PDF IRFP240A IRFR240A

    IRFP240

    Abstract: irfp240 ir
    Text: PD-9.444C International S Rectifier IRFP240 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 0.18Q


    OCR Scan     		PDF IRFP240 O-247 T0-220 O-218 IRFP240 irfp240 ir

    L20A

    Abstract: No abstract text available
    Text: IRFP240A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 200V


    OCR Scan     		PDF IRFP240A L20A

    ld18a

    Abstract: No abstract text available
    Text: IRFP240A Advanced Power MOSFET FEATURES BVDSS - 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 20 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V


    OCR Scan     		PDF IRFP240A ld18a

    stm ld18a

    Abstract: No abstract text available
    Text: IRFP240A Advanced Power MOSFET FEATURES BVDSS - 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 20 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V


    OCR Scan     		PDF IRFP240A O-220-F-4L DD3b33E GG3b333 stm ld18a