Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD219410 TECHNICAL DATA DATA SHEET 4001, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -200 Volt, 0.5 Ohm, -11A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9240 Series MAXIMUM RATINGS
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SHD219410
IRF9240
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SHD219410
Abstract: IRF9240
Text: SENSITRON SEMICONDUCTOR SHD219410 TECHNICAL DATA DATA SHEET 4001, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -200 Volt, 0.5 Ohm, -11A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9240 Series MAXIMUM RATINGS
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SHD219410
IRF9240
SHD219410
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IRF9240
Abstract: TA17522 TB334
Text: IRF9240 Data Sheet February 1999 -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF9240
-200V,
TA17522.
-200V
IRF9240
TA17522
TB334
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irf9240 data free download
Abstract: IRF9240-SMD IRF9240
Text: IRF9240 IRF9240–SMD MECHANICAL DATA 25.15 0.99 26.67 (1.05) P–CHANNEL POWER MOSFET 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)
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IRF9240
IRF9240
O-204AA)
00A/ms
300mS
irf9240 data free download
IRF9240-SMD
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mosfet to3
Abstract: diode SM 6A mosfet 635 irf9240 data free download
Text: IRF9240 IRF9240–SM MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) P–CHANNEL POWER MOSFET 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)
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IRF9240
IRF9240
O-204AA)
00A/ms
300mS
mosfet to3
diode SM 6A
mosfet 635
irf9240 data free download
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irf9240
Abstract: No abstract text available
Text: PD - 90420 IRF9240 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF9240 BVDSS -200V RDS(on) 0.5Ω ID -11A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF9240
O-204AA/AE)
-200V
electrical252-7105
irf9240
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Untitled
Abstract: No abstract text available
Text: PD - 90420 IRF9240 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF9240 BVDSS -200V RDS(on) 0.5Ω ID -11A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF9240
O-204AA/AE)
-200V
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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irf630 irf640
Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший
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220AB
0RFP25N05
RFP50N05
RFP22N10
RFP40N10
IRFP450
IRFP460
IRFPG40
IRF9510
irf630 irf640
IRF250N
Irfp250 irfp460
IRF6404
MOSFET IRF460
irf460 to-247
FET IRFP450
IRF510 mosfet irf640
MOSFET IRF460 TO 247
MOSFET IRF
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IRF9240
Abstract: IRF9240SMD IRFN9240SMD
Text: IRF9240 IRFN9240SMD MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) IRF9240 1.52 (0.06) 3.43 (0.135) D 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52)
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IRF9240
IRFN9240SMD
O-204AA)
O276AB
IRF9240
IRF9240SMD
IRFN9240SMD
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Untitled
Abstract: No abstract text available
Text: IRF9240 IRFN9240 IRF9240SMD MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) IRF9240 1.52 (0.06) 3.43 (0.135) D 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)
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IRF9240
IRFN9240
IRF9240SMD
O-204AA)
IRFN9240SMD
O276AB
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IRF9240
Abstract: IRF9240SMD IRFN9240 IRFN9240SMD mosfet to3 TO3 package
Text: IRF9240 IRFN9240 IRF9240SMD MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) IRF9240 1.52 (0.06) 3.43 (0.135) D 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)
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IRF9240
IRFN9240
IRF9240SMD
O-204AA)
IRFN9240SMD
O276AB
IRF9240
IRF9240SMD
IRFN9240
IRFN9240SMD
mosfet to3
TO3 package
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IRF9240
Abstract: IRF9241 Harris Semiconductor irf9240
Text: IRF9240, IRF9241, IRF9242, IRF9243 S E M I C O N D U C T O R -9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF9240,
IRF9241,
IRF9242,
IRF9243
-150V
-200V,
TA17522.
IRF9240
IRF9241
Harris Semiconductor irf9240
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Untitled
Abstract: No abstract text available
Text: LT1684 Micropower Ring Tone Generator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Allows Dynamic Control of Output Frequency, Cadence, Amplitude and DC Offset Active Tracking Supply Configuration Allows Linear Generation of Ring Tone Signal
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LT1684
14-Pin
LTC1177-5/LTC1177-12
2500VRMS
LT1270
LT1271
LT1339
LT1676
100kHz,
500mA
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p12p10
Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851
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2N6804
2N6849
2N6851
2N6895
2N6896
2N6897
2N6898
IRF9130,
IRF9131,
IRF9132,
p12p10
IRF9530* p-channel power MOSFET
Power MOSFETs
Field-Effect Transistors
IRFP9140/P9141
irf9640 mosfet
IRF9530 P-channel power
p-channel
irfp9240
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IRF9240SM
Abstract: Scans-007819 t0220s
Text: im IP P i llll SEME IRF9240SM LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 2.0 3.5 V DSS 0.25 -8 A ^D(cont) 3.0 3.5 -2 0 0 V vr 0.051 n ^DS(on) irt"— *— FEATURES TT • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF
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IRF9240SM
-200V
T0-220SM
-100A/
300ms,
DDD1504
IRF9240SM
Scans-007819
t0220s
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IRF9240
Abstract: SFF9240-28
Text: smi PRELIMINARY SFF9240-28 SOLID STATE DEVICES, INC - 3 d 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 -11 AMP -200 VOLTS 0.50Í2 P-CHANNEL POWER MOSFET Designer’s Data Sheet
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670-SSDI
IRF9240
SFF9240-28
SFF9240-28
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200 Amp mosfet
Abstract: IRF9240
Text: UMI /— —— —V I PRELIMINARY SFF9240/3 - SOLID STATE DEVICES, INC 14849 Firestone Boulevard La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 -11 AMP •200 VOLTS 0.50Q P-CHANNEL POWER MOSFET Designer’s Data Sheet
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670-SSDI
IRF9240
SFF9240/3
IS--11
200 Amp mosfet
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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FP0003
Abstract: IRF9240 SFF9240M SFF9240Z
Text: SFF9240M SFF9240Z SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 -11 AMP -200 VOLTS 0.50£2 P-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • • • • • • •
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670-SSDI
IRF9240
SFF9240M
SFF9240Z
O-254
O-254Z
O-254
2x150
FP0003
SFF9240Z
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IRF9240
Abstract: SFF9240C
Text: M r fo ll p r ,: l ,m in a r y - - - SFF9240C SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,C A90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 -11 AMP -200 VOLTS 0.50Q P-CHANNEL POWER MOSFET | D e s ig n e r’s Data S h eet FEATURES:
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S13II-
670-SSDI
IRF9240
SFF9240C
O-254C
SFF9240C
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IRF9241
Abstract: irf9243 IRF9240 mosfet IRF9240 IRF9242
Text: Rugged Power MOSFETs IRF9240, IRF9241 IRF9242, IRF9243 File Number 2279 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -9 A and -11 A, -150 V and -200 V ros on = 0.5 n and 0.7 O Features: • Single pulse avalanche energy rated ■ SOA is pow er-dissipation lim ite d
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IRF9240,
IRF9241
IRF9242,
IRF9243
IRF9241,
IRF9243
f9240
4327B
IRF9240
mosfet IRF9240
IRF9242
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IRF9640 irf9240
Abstract: irfp 9640 IRF9640 semiconductor IRF 9640 9243 f9640 IRF9642 FP9240 irfp9240
Text: D 98D 05420 _7964142 S A MS UN G SE MIC O N D U C T OR INC_ IRF9240/9241/9242/9243?-^l ^b4ji4d uuuò4du . f "V * ir m ii V k L ~ ’ IRFP9240/9241/9242/9243 POWER MOSFETS IRF9640/9641 /9642/9643 Tfl Preliminary Specifications D E | 7 cì b 4 1 , 4 2 000S4S0
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IRF9240/9241/9242/9243
IRFP9240/9241/9242/9243
IRF9640/9641
FP9240,
F9640
F/IRFP9241,
IRF9641
IRF/IRFP9242,
F9642
IRF/IRFP9243,
IRF9640 irf9240
irfp 9640
IRF9640
semiconductor IRF 9640
9243
IRF9642
FP9240
irfp9240
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Untitled
Abstract: No abstract text available
Text: IRF9240, IRF9241, IRF9242, IRF9243 HARRIS S E M I C O N D U C T O R -9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs January 1998 Features Description • - 9A and -11 A, -150V and -200V • High Input Im pedance These are P-Channel enhancement mode silicon gate
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PDF
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IRF9240,
IRF9241,
IRF9242,
IRF9243
-150V
-200V,
TA17522.
RF9240,
RF9241,
RF9242,
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