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    MOSFET IRF740 AS SWITCH Search Results

    MOSFET IRF740 AS SWITCH Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF740 AS SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF740PBF

    Abstract: IRF740 irf740 mosfet SiHF740 SiHF740-E3
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 O-220 O-220 18-Jul-08 IRF740PBF IRF740 irf740 mosfet SiHF740-E3

    power MOSFET IRF740 driver circuit

    Abstract: IRF740 irf740 mosfet IRF740PBF SiHF740 SiHF740-E3
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 O-220 O-220 18-Jul-08 power MOSFET IRF740 driver circuit IRF740 irf740 mosfet IRF740PBF SiHF740-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF740

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF740

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irf740 mosfet

    Abstract: irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334
    Text: IRF740 Data Sheet January 2002 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF740 O-220AB irf740 mosfet irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334

    MOSFET IRF740 as switch

    Abstract: IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740
    Text: DC COMPONENTS CO., LTD. IRF740 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 400 Volts RDS on = 0.55 Ohm ID = 10 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements


    Original     		PDF IRF740 O-220AB MOSFET IRF740 as switch IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740

    IRF740

    Abstract: irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740
    Text: IRF740  N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF740 O-220 IRF740 irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740

    irf740

    Abstract: irf740 mosfet 53A2
    Text: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF740 O-220 irf740 irf740 mosfet 53A2

    Untitled

    Abstract: No abstract text available
    Text: <^/ v i, One. . 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel MOSFET Transistor IRF740 0(2) o DESCRIPTION * -> • Drain Current-ID= 10A@ TC=25°C I • Drain Source Voltage: VDSS= 400V(Min)


    Original     		PDF IRF740 O-220C

    SEC IRF740

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF740 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		PDF IRF740 O-220 SEC IRF740

    IR2110

    Abstract: AN IR2110 h bridge ir2110 h bridge irf740 driver circuit for MOSFET IR2110 ir2110 circuit IR2110 MOSFET DRIVER IR2110 design IR211x IR2110 application note
    Text: Design Tips DT 92-1B Solving Noise Problems In High Power, High Frequency Control IC Driven Power Stages Introduction Stray Inductances The IR2110 high and low side driver Control IC is one of a family of International Rectifier devices which provides a convenient and cost


    Original     		PDF 92-1B IR2110 IR2110 AN IR2110 h bridge ir2110 h bridge irf740 driver circuit for MOSFET IR2110 ir2110 circuit IR2110 MOSFET DRIVER IR2110 design IR211x IR2110 application note

    irf510 switch

    Abstract: irf840 mosfet drive circuit diagram MOSFET IRF740 as switch irf520 switch IRFZ44 mosfet IRFZ44 IRF540 IRF510 application note gate drive for mosfet irfz44 power MOSFET IRF740 driver circuit
    Text: Application Note 24 Micrel Application Note 24 Designing with Low-Side MOSFET Drivers by John McGinty hanced . Subsequently, the gate-to-drain capacitance requires more current due to the changing drain voltage, which steals from the available gate-drive current of the MOSFET


    Original     		PDF

    irf740 spice model

    Abstract: IRF740
    Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package


    OCR Scan     		PDF SS452 IRF740 IRF74Ã IRF742 IRF743 T0-220AB IRF741 C-299 irf740 spice model IRF740

    SEC IRF740

    Abstract: power MOSFET IRF740 driver circuit
    Text: IRF740 Advanced Power MOSFET FEATURES B ^ dss - 400 V ^ D S o n = 0 -5 5 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF740 SEC IRF740 power MOSFET IRF740 driver circuit

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF740 O-220AB

    IRF470

    Abstract: LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent power MOSFET IRF740 driver circuit gate drive circuit for power MOSFET IRF740
    Text: International d iiRectifier D e sig n T ip s IN TE R N A TIO N A L R E C TIFIER • A P P LIC A T IO N S ENG. - 23 3 K AN S A S ST • E LS E G U N D O , CA. 9 0 2 4 5 - TE L 310 322-3331 • F A X (310)322-3332 LOW GATE CHARGE HEXFETS SIMPLIFY GATE DRIVE AND LOWER COST


    OCR Scan     		PDF 90245-TEL AN-944A: AN-937B: IRF470 LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent power MOSFET IRF740 driver circuit gate drive circuit for power MOSFET IRF740

    gate drive circuit for power MOSFET IRF740

    Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
    Text: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF740, IRF741, IRF742, IRF743 TA17424. gate drive circuit for power MOSFET IRF740 irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir

    LG diode 831

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF740 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.


    OCR Scan     		PDF IRF740 LG diode 831

    Untitled

    Abstract: No abstract text available
    Text: STR-S6513 OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-S6513 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device


    OCR Scan     		PDF STR-S6513 STR-S6513 MK-003-91

    Untitled

    Abstract: No abstract text available
    Text: OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-S6513 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device incorporates the primary control and drive circuit with a discrete ava­


    OCR Scan     		PDF STR-S6513 STR-S6513 MK-003-91

    irf840 mosfet drive circuit diagram

    Abstract: 7170 MOSFET MIC44XX IRFZ44 mosfet switching circuit IRF510 application note power MOSFET IRF740 driver circuit MOSFET IRF740 as switch irf510 switch power MOSFET IRF610 circuit diagram of mosfet based power supply
    Text: Application Note 24 Designing with Low-Side MOSFET Drivers by John McGinty Introduction The proper marriage of a MOSFET driver to a power MOS­ FET is essential for optimized switch performance. Designing for adequate gate drive, resulting in fast rise and fall times of


    OCR Scan     		PDF MIC4416 OT-143 IRF7413 MIC4416/17 irf840 mosfet drive circuit diagram 7170 MOSFET MIC44XX IRFZ44 mosfet switching circuit IRF510 application note power MOSFET IRF740 driver circuit MOSFET IRF740 as switch irf510 switch power MOSFET IRF610 circuit diagram of mosfet based power supply

    mosfet to ignition coil

    Abstract: 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition
    Text: APPLICATION NOTE 969 Economic, High Performance, High Efficiency Electronic Ignition with Avalanche-Rated HEXFETs HEXFET is a trademark of International Rectifier by Brian E. Taylor Introduction Gasoline engine ignition circuits represent a severe environment for


    OCR Scan     		PDF 00V/DIV AN966: AN-969 mosfet to ignition coil 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition