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    MOSFET IRF7313 Search Results

    MOSFET IRF7313 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF7313 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF7313

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1480 IRF7313 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1


    Original     		PDF IRF7313 IRF7313

    PN channel MOSFET 10A

    Abstract: No abstract text available
    Text: PD - 96125 IRF7313QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2


    Original     		PDF IRF7313QPbF EIA-481 EIA-541. PN channel MOSFET 10A

    EIA-541

    Abstract: F7101 IRF7101 PN channel MOSFET 10A
    Text: PD - 96125A IRF7313QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description


    Original     		PDF 6125A IRF7313QPbF extrem461 EIA-481 EIA-541. EIA-541 F7101 IRF7101 PN channel MOSFET 10A

    f7101

    Abstract: irf7313pbf MARKING CODE SO-8 PIC16F877A circuit diagram EIA-541 IRF7101
    Text: PD - 95039 IRF7313PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description


    Original     		PDF IRF7313PbF EIA-481 EIA-541. f7101 irf7313pbf MARKING CODE SO-8 PIC16F877A circuit diagram EIA-541 IRF7101

    EIA-541

    Abstract: MS-012AA
    Text: PD - 96072A IRF7313UPbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description VDSS = 30V RDS on = 0.029Ω Top View Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 6072A IRF7313UPbF thro461 EIA-481 EIA-541. EIA-541 MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: PD - 91480B IRF7313 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91480B IRF7313 EIA-481 EIA-541.

    IRF7313

    Abstract: MS-012AA 1g26 91480
    Text: PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V D1 D2 D2 RDS on = 0.029Ω T o p V iew Description


    Original     		PDF IRF7313 IRF7313 MS-012AA 1g26 91480

    IRF7313

    Abstract: EIA-541 F7101 IRF7101 MS-012AA MOSFET IRF7313
    Text: PD - 91480B IRF7313 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91480B IRF7313 EIA-481 EIA-541. IRF7313 EIA-541 F7101 IRF7101 MS-012AA MOSFET IRF7313

    IRF7313

    Abstract: MS-012AA 1g26
    Text: PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V D1 D2 D2 RDS on = 0.029Ω T o p V iew Description


    Original     		PDF IRF7313 IRF7313 MS-012AA 1g26

    IRF9956

    Abstract: IRF7303 IRF7313 IRF7503
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1559 IRF9956 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1


    Original     		PDF IRF9956 IRF9956 IRF7303 IRF7313 IRF7503

    IRF7303

    Abstract: IRF7313 IRF7503 IRF9956
    Text: PD - 9.1559A IRF9956 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V


    Original     		PDF IRF9956 IRF7303 IRF7313 IRF7503 IRF9956

    EIA-541

    Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503
    Text: PD - 95259 IRF9956PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2


    Original     		PDF IRF9956PbF EIA-481 EIA-541. EIA-541 F7101 IRF7101 IRF7303 IRF7313 IRF7503

    Untitled

    Abstract: No abstract text available
    Text: PD - 95259 IRF9956PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2


    Original     		PDF IRF9956PbF EIA-481 EIA-541.

    EIA-541

    Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503
    Text: PD - 95259 IRF9956PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2


    Original     		PDF IRF9956PbF EIA-481 EIA-541. EIA-541 F7101 IRF7101 IRF7303 IRF7313 IRF7503

    Untitled

    Abstract: No abstract text available
    Text: IRF7313PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 30 V 0.029 Ω 22 Qg (typical) ID nC 6.5 (@TA = 25°C) 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 A SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original     		PDF IRF7313PbF-1 IRF7313TRPbF-1 D-020D

    analog switch circuit using mosfet

    Abstract: APU3039 25TQC15M APU3039M APU3039VN IRF7458 IRF7466 Parallel operation mosfet 21kHz amplifier 300 Volt mosfet schematic circuit
    Text: Technology Licensed from International Rectifier APU3039 SYNCHRONOUS PWM CONTROLLER WITH OVER CURRENT PROTECTION DESCRIPTION FEATURES Current Limit using Lower MOSFET Sensing Using the 6V internal regulator for charge pump circuit allows single supply operation up to 18V


    Original     		PDF APU3039 400KHz APU3039 400KHz, 3300pF analog switch circuit using mosfet 25TQC15M APU3039M APU3039VN IRF7458 IRF7466 Parallel operation mosfet 21kHz amplifier 300 Volt mosfet schematic circuit

    6TPC330M

    Abstract: 200khz power mosfet 8A 25TQC15M DO5022HC IRF7458 IRF7466 IRU3039 IRU3039CH IRU3039CHTR jc23
    Text: Data Sheet No. PD94649 revB IRU3039 PbF SYNCHRONOUS PWM CONTROLLER WITH OVER CURRENT PROTECTION DESCRIPTION FEATURES Current Limit using Lower MOSFET Sensing Using the 6V internal regulator for charge pump circuit allows single supply operation up to 18V


    Original     		PDF PD94649 IRU3039 400KHz 6TPC330M 200khz power mosfet 8A 25TQC15M DO5022HC IRF7458 IRF7466 IRU3039CH IRU3039CHTR jc23

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    Untitled

    Abstract: No abstract text available
    Text: TPS2310 TPS2311 www.ti.com SLVS275G – FEBRUARY 2000 – REVISED NOVEMBER 2006 DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING FEATURES • • • • • • • • • • Dual-Channel High-Side MOSFET Drivers


    Original     		PDF TPS2310 TPS2311 SLVS275G 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier


    OCR Scan     		PDF IRF7313 muttiple-diEiA-481 EIA-541.

    C123 j.s

    Abstract: No abstract text available
    Text: International HSR Rectifier PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss = 30V ^DS on = 0.0290 Top View Description


    OCR Scan     		PDF IRF7313 C-124 C123 j.s

    Untitled

    Abstract: No abstract text available
    Text: f H P D - 9 .1 4 8 0 A International IG R Rectifier IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channei MOSFET Surface Mount Fully Avalanche Rated Voss = 30V 52 a E r - i G2 n r — RDS on = 0.029Q Top View


    OCR Scan     		PDF IRF7313 2b22D

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1559A International IG R Rectifier IRF9956 PRELIMINARY HEXFET Power MOSFET • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated


    OCR Scan     		PDF IRF9956

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier P D - 9.1559 IRF9956 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses • Fully Avalanche Rated V dss = 30V


    OCR Scan     		PDF IRF9956 002bG04