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    MOSFET IR 250 N Search Results

    MOSFET IR 250 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IR 250 N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OM803

    Abstract: OM9007SC OM9008SC OM9009SC OM9010SC static characteristics of mosfet
    Text: OM9007SC OM9008SC OM9009SC OM9010SC POWER MOSFETS & FAST RECOVERY RECTIFIER IN HERMETIC ISOLATED JEDEC MO-078 PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET And Fast Recovery Power Rectifier FEATURES • • • • • Uncommitted MOSFET And Rectifier In One Package


    Original     		PDF OM9007SC OM9008SC OM9009SC OM9010SC MO-078 OM803 300msec, OM9007SC OM803 OM9008SC OM9009SC OM9010SC static characteristics of mosfet

    OM9001SS

    Abstract: OM9002SS OM9003SS OM9004SS 2 Amp zener diode
    Text: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier


    Original     		PDF OM9001SS OM9003SS OM9002SS OM9004SS MIL-S-19500, perf50 OM9003SS OM9004SS 2 Amp zener diode

    k3226

    Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
    Text: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.


    OCR Scan     		PDF T-39-11 4fl5545H IRF234, IRF235 k3226 LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234

    Untitled

    Abstract: No abstract text available
    Text: IR F M 2 1 4 A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jjA M a x. @ VDS= 250V


    OCR Scan     		PDF OT-223 RFM214A IRFM214A

    IRFS244A

    Abstract: No abstract text available
    Text: IR FS244A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 0 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10^iA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFS244A IRFS244A

    IRFS244

    Abstract: No abstract text available
    Text: IR FS244 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 0 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10^iA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFS244 IRFS244

    IRF644S

    Abstract: No abstract text available
    Text: IR F644S A dvanced Power MOSFET FEATURES B V dss = 250 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -2 8 ÌÌ 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF644S IRF644S

    IRFS244

    Abstract: 5BA DIODE
    Text: IR FS244 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 0 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10^iA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFS244 IRFS244 5BA DIODE

    E5CC

    Abstract: 108D IRFS254A erij
    Text: IR FS254A A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Rugged Gate Oxide Technology ^DS on = 0.1 4Q ♦ Lower Input Capacitance lD = 16 A ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO -3PF ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFS254A E5CC 108D IRFS254A erij

    Untitled

    Abstract: No abstract text available
    Text: A d van ced Power MOSFET IR L R /U 1 3 0 A FEATURES B V DSS - 100 V ^D S o n = 0 .1 2 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 13 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL640 A d van ced Power MOSFET FEATURES BV DSS = 200 V ♦ Logic-Level Gate Drive - 0.1 8 fl ♦ Avalanche Rugged Technology ^D S o n ♦ Rugged Gate Oxide Technology In = 1 8 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL640 O-220

    Untitled

    Abstract: No abstract text available
    Text: IRLW/I640A A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S o n = 0 .1 8 f l ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K


    OCR Scan     		PDF IRLW/I640A

    Untitled

    Abstract: No abstract text available
    Text: IRL640S A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S o n = 0 .1 8 f l ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRL640S

    Untitled

    Abstract: No abstract text available
    Text: IRLR/U210A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V


    OCR Scan     		PDF IRLR/U210A

    Untitled

    Abstract: No abstract text available
    Text: IRL620S A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology cn ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRL620S

    Untitled

    Abstract: No abstract text available
    Text: IRLW/I620A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology cn ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRLW/I620A

    IRF624

    Abstract: No abstract text available
    Text: IR F624 A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 .1 Q 4 .1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10nA(M ax.) @ V DS = 250V


    OCR Scan     		PDF IRF624 742fi IRF624

    Untitled

    Abstract: No abstract text available
    Text: IR L R /U 110A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .4 4 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK


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    Untitled

    Abstract: No abstract text available
    Text: IRLR220 A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V


    OCR Scan     		PDF IRLR220

    Untitled

    Abstract: No abstract text available
    Text: IRLR/U220A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V


    OCR Scan     		PDF IRLR/U220A

    Untitled

    Abstract: No abstract text available
    Text: IR L W /I510A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .4 4 Ì2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD LO Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


    OCR Scan     		PDF /I510A /1510A

    Untitled

    Abstract: No abstract text available
    Text: IRL630 A d van ced Power MOSFET FEATURES BVDSS - ♦ Logic-Level Gate Drive 0.4Î2 > CD o ♦ Rugged Gate Oxide Technology II ^ D S o n = ♦ Avalanche Rugged Technology 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL630

    Untitled

    Abstract: No abstract text available
    Text: IRL610S A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . o ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology CO CO ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRL610S

    Untitled

    Abstract: No abstract text available
    Text: IRLW/I610A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . o ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology CO CO ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRLW/I610A