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    MOSFET INDUCTOR Search Results

    MOSFET INDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET INDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    lp2937

    Abstract: mbrs0520 sanyo capacitor 6SVPC220M GRM319R71H104KA01 sl22-E3/2C lp293 IRF6609 IRF6633 LM2747 CRCW060310R0
    Text: National Semiconductor Application Note 1641 Ricardo Capetillo May 2007 Introduction Note, increasing the switching frequency results in a lower inductor current ripple and input and output voltage ripple if the component values are kept the same . Monitor the MOSFET junction temperature since switching losses will increase, and do not exceed the maximum junction temperature of the MOSFET. Refer to the MOSFET manufacturer


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    LM2747 AN-1641 lp2937 mbrs0520 sanyo capacitor 6SVPC220M GRM319R71H104KA01 sl22-E3/2C lp293 IRF6609 IRF6633 CRCW060310R0 PDF

    lp2937

    Abstract: IRF6609 IRF6633 LM2745 MBRS0520 AN-1573
    Text: National Semiconductor Application Note 1573 Ricardo Capetillo May 2007 Introduction Note, increasing the switching frequency results in a lower inductor current ripple and input and output voltage ripple if the component values are kept the same . Monitor the MOSFET junction temperature since switching losses will increase, and do not exceed the maximum junction temperature of the MOSFET. Refer to the MOSFET manufacturer


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    LM2745 AN-1573 lp2937 IRF6609 IRF6633 MBRS0520 AN-1573 PDF

    L6741

    Abstract: JESD97 L6741TR
    Text: L6741 High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ High frequency operation ■ Integrated bootstrap diode ■ Adaptive dead-time management


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    L6741 L6741 JESD97 L6741TR PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9625A Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625A is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.


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    RT9625A RT9625A 500kHz. DS9625A-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: L6741 High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ High frequency operation ■ Integrated bootstrap diode ■ Adaptive dead-time management


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    L6741 L6741 PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9625B Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625B is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.


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    RT9625B RT9625B 500kHz. DS9625B-03 PDF

    RT9625

    Abstract: No abstract text available
    Text: RT9625A Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625A is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.


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    RT9625A RT9625A 500kHz. DS9625A-02 RT9625 PDF

    RT96

    Abstract: No abstract text available
    Text: RT9625B Dual-Channel Synchronous Rectified MOSFET Driver General Description Features The RT9625B is a high frequency, synchronous rectified, two phase MOSFET driver designed for normal MOSFET driving applications and high performance CPU VR driving capabilities.


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    RT9625B RT9625B 500kHz. DS9625B-02 RT96 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MOSFET „ DESCRIPTION The UTC UT6302 is a Power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments,


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    UT6302 UT6302 UT6302G-AE3-R OT-23 6302G QW-R502-363 PDF

    L6743D

    Abstract: No abstract text available
    Text: L6743D High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management


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    L6743D L6743D PDF

    irf 520

    Abstract: IRFH7928TRPBF
    Text: PD -96209 Preliminary IRFH7928PbF Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems HEXFET Power MOSFET VDSS 30V RDS on max Qg 2.9m @VGS = 10V 40nC : Benefits


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    IRFH7928PbF 089mH, irf 520 IRFH7928TRPBF PDF

    max 17126

    Abstract: High Current Low Side Driver ST 17126 pin diagram of MOSFET st mosfet PUSH PULL MOSFET DRIVER L6747ATR L6747A
    Text: L6747A High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management


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    L6747A L6747A max 17126 High Current Low Side Driver ST 17126 pin diagram of MOSFET st mosfet PUSH PULL MOSFET DRIVER L6747ATR PDF

    Untitled

    Abstract: No abstract text available
    Text: L6743B High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management


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    L6743B L6743B PDF

    a4940klp

    Abstract: No abstract text available
    Text: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description High current gate drive for N-channel MOSFET full bridge Independent control of each MOSFET Charge pump for low supply voltage operation Cross-conduction protection with adjustable dead time


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    A4940 24-pin A4940 a4940klp PDF

    Untitled

    Abstract: No abstract text available
    Text: L6743D High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management


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    L6743D L6743D PDF

    Untitled

    Abstract: No abstract text available
    Text: L6747A High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management


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    L6747A PDF

    high-speed power mosfet 2Mhz

    Abstract: LM27212 5Vto28V
    Text: LM27222 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Literature Number: SNVS306A LM27222 High-Speed 4.5A Synchronous MOSFET Driver General Description Features The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically


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    LM27222 LM27222 SNVS306A high-speed power mosfet 2Mhz LM27212 5Vto28V PDF

    IRF3717

    Abstract: F7101 IRF7101
    Text: PD - 95843 IRF3717 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max 4.4m:@VGS = 10V 20V Benefits l Ultra-Low Gate Impedance


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    IRF3717 EIA-481 EIA-541. IRF3717 F7101 IRF7101 PDF

    DFN10 thermal resistance

    Abstract: MOSFET A3 DFN10 JESD97 L6743 L6743Q L6743QTR L6743TR
    Text: L6743 L6743Q High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management


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    L6743 L6743Q DFN10 L6743, DFN10 thermal resistance MOSFET A3 JESD97 L6743 L6743Q L6743QTR L6743TR PDF

    Untitled

    Abstract: No abstract text available
    Text: L6743 L6743Q High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management


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    L6743 L6743Q DFN10 L6743, PDF

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


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    AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS PDF

    DFN10

    Abstract: JESD97 L6743 L6743Q L6743QTR L6743TR
    Text: L6743 L6743Q High current MOSFET driver Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management


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    L6743 L6743Q DFN10 L6743, JESD97 L6743 L6743Q L6743QTR L6743TR PDF

    200 Amp bridge mosfet

    Abstract: a4940 A4940KLPTR-T series connection of mosfet brush DC Motor control fast high side mosfet driver IPC7351 JESD51-5
    Text: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time


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    A4940 A4940 24-pin 200 Amp bridge mosfet A4940KLPTR-T series connection of mosfet brush DC Motor control fast high side mosfet driver IPC7351 JESD51-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET „ DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.


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    UT6302 UT6302 UT6302L-AE3-R UT6302G-AE3-R OT-23 QW-R502-363 PDF