IXDD 614
Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers
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AN0002
RH159NB
D-68623;
IXDD 614
BJT de potencia
zener diode 1N PH 48
CHN 841
lm339 igbt driver
ups transformer winding formula
mosfet igbt drivers theory
MOSFET IGBT DRIVERS THEORY AND APPLICATIONS
chn 614 diod
MOSFET IGBT THEORY AND APPLICATIONS
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IXAN0010
Abstract: 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD
Text: IXAN0010 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers 2. Types of Drivers
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IXAN0010
D-68623;
IXAN0010
0010
ixan0010 4
ixan0010 2
MOSFET IGBT DRIVERS THEORY AND APPLICATIONS
MOSFET IGBT THEORY AND APPLICATIONS
18V, 400mW Zener diodes protect
mosfet igbt drivers theory
IXDD408
IXDD
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MRF160
Abstract: RF MOSFET Driver ADVANCED POWER TECHNOLOGY EUROPE "RF MOSFET"
Text: MRF160 The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V M/A-COM Products Released - Rev. 07.07 Product Image Designed primarily for wideband large–signal output and driver from 30–500 MHz. N–Channel enhancement mode MOSFET • • • • •
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MRF160
500MHz,
MRF160
RF MOSFET Driver
ADVANCED POWER TECHNOLOGY EUROPE
"RF MOSFET"
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MRF154
Abstract: RF POWER MOSFET MRF154 A
Text: MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. M/A-COM Products Released - Rev. 07.07 Product Image N–Channel enhancement mode MOSFET • Specified 50 volts, 30 MHz characteristics
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MRF154
80MHz,
MRF154
RF POWER MOSFET
MRF154 A
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MRF171A
Abstract: "RF MOSFET" mrf171
Text: MRF171A The RF MOSFET Line 45W, 150MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. Product Image N–Channel enhancement mode MOSFET • • • • • • Guaranteed performance at 150 MHz, 28 Vdc
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MRF171A
150MHz,
MRF171A
"RF MOSFET"
mrf171
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MRF166W
Abstract: "RF MOSFET"
Text: MRF166W The RF MOSFET Line 40W, 500MHz, 28V M/A-COM Products Released - Rev. 07.07 Product Image Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. N–Channel enhancement mode MOSFET • • • • • • • Push–pull configuration reduces even numbered harmonics
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MRF166W
500MHz,
MRF166W
"RF MOSFET"
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SD1902
Abstract: MRF136 BLF244 MRF166C "RF MOSFET"
Text: MRF166C The RF MOSFET Line 20W, 500MHz, 28V M/A-COM Products Released - Rev. 07.07 Product Image Designed primarily for wideband large–signal output and driver from 30– 500MHz. N–Channel enhancement mode MOSFET • • • • • • MRF166C — Guaranteed performance at 500 MHz, 28 Vdc
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MRF166C
500MHz,
500MHz.
MRF166C
MRF136,
V2820,
BLF244,
SD1902,
ST1001
SD1902
MRF136
BLF244
"RF MOSFET"
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MRF174
Abstract: AN721 "RF MOSFETs" "RF MOSFET" RF Transistor s-parameter AN211A
Text: MRF174 The RF MOSFET Line 125W, 200MHz M/A-COM Products Released - Rev. 07.07 Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. Product Image N–Channel enhancement mode MOSFET • • • • • • Guaranteed performance at 150 MHz, 28 Vdc
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MRF174
200MHz
MRF174
AN721
"RF MOSFETs"
"RF MOSFET"
RF Transistor s-parameter
AN211A
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G3VM-41LR10
Abstract: mosfet 407
Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 404 MOSFET Relay – G3VM-41LR6 Text Text MOSFET Relays – G3VM-41LR10 World’s Smallest SSOP Package MOSFET Relays COFF (typical : 0.45 pF, RON (typical): 12 Ω) with Low Output Capacitance and ON Resistance (CxR = 5 pF•Ω) in a 40-V
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G3VM-41LR6
G3VM-41LR10
G3VM-41LR11
J964-E2-01
G3VM-41LR10
mosfet 407
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Untitled
Abstract: No abstract text available
Text: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET
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Si5857DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET
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Si5857DU
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET
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Si5857DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET
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Si5857DU
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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jfet cascode
Abstract: mosfet equivalent AN-7502 mos cascode AN72 RFM15N15 high transconductance JFET Fairchild presentation
Text: Power MOSFET Switching Waveforms: A New Insight Application Note [ /Title AN72 60 /Subject (Power MOSFET Switch ing Waveforms: A New Insight ) /Autho r () /Keywords (Intersil Corporation, semiconductor) /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines
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jfet cascode
Abstract: vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching
Text: Harris Semiconductor No. AN7260.2 Harris Power MOSFETs September 1993 Power MOSFET Switching Waveforms: A New Insight Author: Harold R. Ronan, Jr. and C. Frank Wheatley, Jr. The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the
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AN7260
jfet cascode
vertical JFET
SiS 671
12 VOLTS CIRCUIT USING MOSFET
an7260.2
mosfet equivalent
DEPLETION MOSFET
transistor jfet
Harris Semiconductor jfet
cascode mosfet switching
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mosfet equivalent
Abstract: cascode mosfet switching jfet cascode JFET 104 AN7260 RFM15N15 an7260.3
Text: Power MOSFET Switching Waveforms: A New Insight Application Note The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the device characterization now practiced by industry is inadequate. In this Note, device waveforms are explained by
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APT9903
Abstract: RF Amplifier 500w 175 mhz schematic rf Power supply 500w plasma Class E amplifier n-channel 500w RF power mosfet RF Amplifier 500w class E power amplifier 13.56 FERRITE TRANSFORMER 500W spice model ARF448A ARF448A
Text: APPLICATION NOTE By: APT9903 Richard Frey, P.E. 500W, CLASS E 27.12 MHz AMPLIFIER USING A SINGLE PLASTIC MOSFET 1 APT9903 500W, Class E 27.12 MHz Amplifier Using A Single Plastic MOSFET Richard Frey, P.E. Advanced Power Technology, Inc. Bend, Oregon 97702 USA
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APT9903
O-247
APT9903
RF Amplifier 500w 175 mhz
schematic rf Power supply 500w plasma
Class E amplifier
n-channel 500w RF power mosfet
RF Amplifier 500w
class E power amplifier 13.56
FERRITE TRANSFORMER 500W
spice model ARF448A
ARF448A
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14v 10A mosfet
Abstract: No abstract text available
Text: EOL PI2126 Series 30 Volt, 12 Amp Full-Function Active ORing Solution Description Features The PI2126 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state resistance MOSFET
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PI2126
PI2126
14v 10A mosfet
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G3VM-353D1
Abstract: G3VM-353A G3VM-353A1 G3VM-353D mosfet 345
Text: Omron A5 Catalogue 2006 295-430 14/10/05 10:08 am Page 344 MOSFET Relay – G3VM-353A/A1/D/D1 Text Analog-switching MOSFET Relay with SPST-NC Single-pole, Singlethrow, Normally Closed Contacts. General-purpose Series Added. • Switches minute analog signals.
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G3VM-353A/A1/D/D1
G3VM-353A/D
G3VM-353A1/D1
G3VM-353D1
G3VM-353A
G3VM-353A1
G3VM-353D
mosfet 345
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BD9G101G
Abstract: SSOP6
Text: Datasheet Single-chip Type with Built-in FET Switching Regulators Simple Step-down Switching Regulators with Built-in Power MOSFET BD9G101G ●General Description The BD9G101G is switching regulator with integrated internal high-side 42V Power MOSFET. It provides 0.5A DC output with small SOT23 package.
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BD9G101G
BD9G101G
OT-23-6
5V/800m
SSOP6
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Untitled
Abstract: No abstract text available
Text: Datasheet Single-chip Type with Built-in FET Switching Regulators Simple Step-down Switching Regulators with Built-in Power MOSFET BD9G101G ●General Description The BD9G101G is switching regulator with integrated internal high-side 42V Power MOSFET. It provides 0.5A DC output with small SOT23 package.
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BD9G101G
BD9G101G
OT-23-6
5V/800mÎ
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mosfet catalogue
Abstract: "MOSFET A5 G3VM-354C G3VM-354C1 G3VM-354F G3VM-354F1 PCB 354C
Text: Omron A5 Catalogue 2006 295-430 14/10/05 10:09 am Page 414 MOSFET Relay – G3VM-354C/C1/F/F1 Text Analog-switching MOSFET Relay with DPST-NC Double-pole, Singlethrow, Normally Closed Contacts. General-purpose Series Added. • Switches minute analog signals.
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G3VM-354C/C1/F/F1
G3VM-354C/F
G3VM-354C1/F1
mosfet catalogue
"MOSFET A5
G3VM-354C
G3VM-354C1
G3VM-354F
G3VM-354F1
PCB 354C
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BD-9G
Abstract: 1235AS-H-100M SSOP6 fet amplifier with unit gain
Text: Datasheet Single-chip Type with Built-in FET Switching Regulators Simple Step-down Switching Regulators with Built-in Power MOSFET BD9G101G ●General Description The BD9G101G is switching regulator with integrated internal high-side 42V Power MOSFET. It provides 0.5A DC output with small SOT23 package.
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BD9G101G
BD9G101G
OT-23-6
5V/800m
BD-9G
1235AS-H-100M
SSOP6
fet amplifier with unit gain
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Untitled
Abstract: No abstract text available
Text: Datasheet Single-chip Type with Built-in FET Switching Regulators Simple Step-down Switching Regulators with Built-in Power MOSFET BD9G101G General Description The BD9G101G is switching regulator with integrated internal high-side 42V Power MOSFET. It provides 0.5A DC output with small SOT23 package.
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BD9G101G
BD9G101G
OT-23-6
5V/800m
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