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    MOSFET G27N120BN Search Results

    MOSFET G27N120BN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET G27N120BN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    G27N120BN

    Abstract: MOSFET G27N120BN HGTG27N120BN LD26 RHRP30120 TA49280
    Text: HGTG27N120BN Data Sheet January 2000 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		PDF HGTG27N120BN HGTG27N120BN 140ns 150oC G27N120BN MOSFET G27N120BN LD26 RHRP30120 TA49280

    g27n120

    Abstract: G27N120BN MOSFET G27N120BN c110 spice model TA49280 HGTG27N120BN LD26 RHRP30120
    Text: HGTG27N120BN Data Sheet January 2000 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		PDF HGTG27N120BN HGTG27N120BN 140ns 150oC g27n120 G27N120BN MOSFET G27N120BN c110 spice model TA49280 LD26 RHRP30120

    RHRP30120

    Abstract: TA49280 G27N120BN HGTG27N120BN LD26
    Text: HGTG27N120BN Data Sheet April 2002 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		PDF HGTG27N120BN HGTG27N120BN 140ns 150oC RHRP30120 TA49280 G27N120BN LD26

    Untitled

    Abstract: No abstract text available
    Text: HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTG27N120BN HGT5A27N120BN HGT5A27N120BN

    G27N120BN

    Abstract: No abstract text available
    Text: HGTG27N120BN Data Sheet December 2001 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		PDF HGTG27N120BN HGTG27N120BN TA49280. G27N120BN

    MOSFET G27N120BN

    Abstract: 27N120 g27n120 HGTG27N120BN RHRP30120 TA49280 G27N120BN HGT5A27N120BN LD26 27N120BN
    Text: HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTG27N120BN HGT5A27N120BN HGT5A27N120BN MOSFET G27N120BN 27N120 g27n120 RHRP30120 TA49280 G27N120BN LD26 27N120BN

    G27N120BN

    Abstract: HGTG27N120BN G27N120 EM- 534 motor
    Text: HGTG27N120BN 56A, 1200V, NPT Series N-Channel IGBT Features Description • 56A, 1200V, T C = 25°C The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of


    OCR Scan     		PDF HGTG27N120BN 140ns HGTG27N120BN G27N120BN G27N120 EM- 534 motor

    Untitled

    Abstract: No abstract text available
    Text: HGTG27N120BN Semiconductor A p ril 1999 D ata S h eet 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    OCR Scan     		PDF HGTG27N120BN HGTG27N120BN 140ns 1-800-4-HARRIS