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    MOSFET DATASHEET Search Results

    MOSFET DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NBA084FP-M306L48 preliminary datasheet Switching Definitions INPUT BOOST MOSFET+IGBT General conditions = 125 °C Tj = 4Ω Rgon IGBT Rgoff IGBT = 4Ω INPUT BOOST MOSFET+IGBT Figure 1 MOSFET turn off delayed by 100ns INPUT BOOST MOSFET+IGBT Figure 2


    Original     		PDF 10-FZ06NBA084FP-M306L48 100ns VGE10% Tjmax-25Â 00V/84A

    2 sd 586

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. - Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M070-020D /-20V 125oC 2 sd 586

    optical mosfet

    Abstract: SPM6M070-020D
    Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. - Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M070-020D /-20V optical mosfet SPM6M070-020D

    Untitled

    Abstract: No abstract text available
    Text: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10


    Original     		PDF VNB35NV04-E VNP35NV04-E, VNV35NV04-E PowerSO-10 VNB35NV04-E, VNP35NV04-E VNV35NV04-E O-220 DocID023550

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D 125oC

    SPM6M080-010D

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. C Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D /-20V SPM6M080-010D

    210C

    Abstract: SPM6M070-020D 70amp
    Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. A Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M070-020D /-20V 210C SPM6M070-020D 70amp

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. B Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D /-20V 125oC

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. B Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D /-20V 125oC

    LIN opto isolator

    Abstract: SPM6M080-010D 210C DS34C87 SFH6186-4
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D.1 Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D LIN opto isolator SPM6M080-010D 210C DS34C87 SFH6186-4

    SPM6M080-010D-B

    Abstract: 210C DS34C87 SFH6186-4 SPM6M080-010D IN 4118 low side pwm drive optocoupler high side MOSFET G 15 Amp 100 volt mosfet BTEMP
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D.2 Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D SPM6M080-010D-B 210C DS34C87 SFH6186-4 SPM6M080-010D IN 4118 low side pwm drive optocoupler high side MOSFET G 15 Amp 100 volt mosfet BTEMP

    AAT4686IJS-T1

    Abstract: p-channel mosfet driver AAT4686 AAT8303 GRM21BR71C105KA01 GRM31CR71H225KA88L GRM31MR71H105KA88 GRM32ER71H475KA88L SC70JW-8 P-channel power mosfet d
    Text: PRODUCT DATASHEET AAT4686 OVPSwitchTM MOSFET Driver IC with Over-Voltage Protection General Description Features The AAT4686 OVPSwitch is a member of AnalogicTech’s Application Specific Power MOSFET™ ASPM™ product family. It is a P-channel MOSFET driver IC with precise


    Original     		PDF AAT4686 AAT4686 AAT4686IJS-T1 p-channel mosfet driver AAT8303 GRM21BR71C105KA01 GRM31CR71H225KA88L GRM31MR71H105KA88 GRM32ER71H475KA88L SC70JW-8 P-channel power mosfet d

    4686

    Abstract: AAT4686IJS-T1 AAT4686IJS-6 p-channel mosfet driver AAT4686 AAT8303 GRM21BR71C105KA01 GRM31CR71H225KA88L GRM31MR71H105KA88 GRM32ER71H475KA88L
    Text: PRODUCT DATASHEET AAT4686 OVPSwitchTM MOSFET Driver IC with Over-Voltage Protection General Description Features The AAT4686 OVPSwitch is a member of AnalogicTech’s Application Specific Power MOSFET™ ASPM™ product family. It is a P-channel MOSFET driver IC with precise


    Original     		PDF AAT4686 AAT4686 4686 AAT4686IJS-T1 AAT4686IJS-6 p-channel mosfet driver AAT8303 GRM21BR71C105KA01 GRM31CR71H225KA88L GRM31MR71H105KA88 GRM32ER71H475KA88L

    SPM6M080-010D

    Abstract: SPM6M060-025D 010D
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. E Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D SPM6M060-025D 50V/60A SPM6M080-010D SPM6M060-025D 010D

    BD6563FV-LB

    Abstract: No abstract text available
    Text: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6563FV-LB ●General Description BD6563FV-LB is 3-ch gate driver to drive gate of IGBT/MOSFET from 5V input signals. Output signals consist of each high side and low side


    Original     		PDF BD6563FV-LB BD6563FV-LB

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6563FV-LB General Description BD6563FV-LB is 3-ch gate driver to drive gate of IGBT/MOSFET from 5V input signals. Output signals consist of each high side and low side


    Original     		PDF BD6563FV-LB BD6563FV-LB

    FDD8N50NZ

    Abstract: FDD8N50 FDD8N50NZTM
    Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and


    Original     		PDF FDD8N50NZ FDD8N50NZ FDD8N50 FDD8N50NZTM

    Untitled

    Abstract: No abstract text available
    Text: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDH210N08

    FDA70N20

    Abstract: No abstract text available
    Text: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA70N20 FDA70N20

    Untitled

    Abstract: No abstract text available
    Text: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching


    Original     		PDF FDB15N50

    fdd7n25

    Abstract: fdd7n25lz
    Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD7N25LZ FDD7N25LZ fdd7n25

    Untitled

    Abstract: No abstract text available
    Text: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides


    Original     		PDF FDPF17N60NT

    Untitled

    Abstract: No abstract text available
    Text: FDP26N40 N-Channel UniFETTM MOSFET 400 V, 26 A, 160 m Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP26N40 FDP26N40

    Untitled

    Abstract: No abstract text available
    Text: FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Description Features • • • • • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP75N08A O-220