Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET D 472 Search Results

    MOSFET D 472 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET D 472 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    25N80C

    Abstract: No abstract text available
    Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions


    Original     		25N80C ISOPLUS220 E72873 25N80C PDF

    800 coolmos

    Abstract: No abstract text available
    Text: IXKC 13N80C Advanced Technical Information COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 13 A VDSS = 800 V RDS on max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features


    Original     		13N80C ISOPLUS220 E72873 20070703a 800 coolmos PDF

    20n60c

    Abstract: No abstract text available
    Text: IXKC 20N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		20N60C ISOPLUS220TM E72873 20n60c PDF

    25N80C

    Abstract: 25n80 E72873 mosfet b4
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D q S S isolated back surface E72873 Features


    Original     		25N80C ISOPLUS220 E72873 20080526a 25N80C 25n80 E72873 mosfet b4 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data


    Original     		23N60C5 ISOPLUS220TM E72873 20100303c PDF

    20N60C

    Abstract: No abstract text available
    Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		20N60C ISOPLUS220TM E72873 20080523a 20N60C PDF

    25n8

    Abstract: No abstract text available
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D fl S S isolated back surface E72873 Features


    Original     		25N80C ISOPLUS220 E72873 0080526a 20080526a 25n8 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A VDSS = 800 V RDS on) max = 290 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D fl S S isolated


    Original     		13N80C ISOPLUS220â E72873 20080526b PDF

    20N60C

    Abstract: IXKC 20n60c
    Text: IXKC 20N60C COOLMOS * Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		20N60C ISOPLUS220TM E72873 20N60C IXKC 20n60c PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 40N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		40N60C ISOPLUS220TM E72873 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		40N60C ISOPLUS220TM E72873 20080523a PDF

    40n60c

    Abstract: mosfet 4800 E72873
    Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		40N60C ISOPLUS220TM E72873 20080523a 40n60c mosfet 4800 E72873 PDF

    20n60c

    Abstract: IXKC 20n60c E72873 A8711
    Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		20N60C ISOPLUS220TM E72873 20080523a 20n60c IXKC 20n60c E72873 A8711 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 40N60C COOLMOS * Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		40N60C ISOPLUS220TM E72873 PDF

    13N80C

    Abstract: 13n80 E72873
    Text: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A = 800 V VDSS RDS on) max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D q S S isolated


    Original     		13N80C ISOPLUS220TM E72873 20080526b 13N80C 13n80 E72873 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS2020, TPS2021, TPS2022, TPS2023, TPS2024 POWERĆDISTRIBUTION SWITCHES SLVS175B − DECEMBER 1998 − REVISED MARCH 2004 D 33-mΩ 5-V Input High-Side MOSFET D D D D D D D D D D D D D OR P PACKAGE (TOP VIEW) Switch Short-Circuit and Thermal Protection


    Original     		TPS2020, TPS2021, TPS2022, TPS2023, TPS2024 SLVS175B E169910 TPS202x slva092 slva093 PDF

    20N60S1

    Abstract: FMH20N60S1 600V 20A N-Channel MOSFET TO-3P
    Text: / FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] φ3.2± 0.1 5±0.1 1.5±0.2 4.5±0.2 Drain D 3 ±0.2 1.5 Applications 15.5max 13 ± 0.2 10 ± 0.2


    Original     		FMH20N60S1 20N60S1 FMH20N60S1 600V 20A N-Channel MOSFET TO-3P PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96336 AUTOMOTIVE MOSFET AUIRF3305 HEXFET Power MOSFET Features V BR DSS D l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


    Original     		AUIRF3305 PDF

    AUIRF3305

    Abstract: No abstract text available
    Text: PD - 96336 AUTOMOTIVE MOSFET AUIRF3305 HEXFET Power MOSFET Features l l l l l l l l l V BR DSS D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


    Original     		AUIRF3305 AUIRF3305 PDF

    DEVICE MARKING 03L

    Abstract: No abstract text available
    Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET


    Original     		SQM110N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM110N04-03L-GE3 18-Jul-08 DEVICE MARKING 03L PDF

    Untitled

    Abstract: No abstract text available
    Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET


    Original     		SQM110N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM110N04-03L-GE3 11-Mar-11 PDF

    67061

    Abstract: SQM120N04-03L
    Text: SQM120N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET


    Original     		SQM120N04-03L AEC-Q101 2002/95/EC O-263 O-263 SQM120N04-03L-GE3 11-Mar-11 67061 SQM120N04-03L PDF

    APM4430

    Abstract: APM4430K STD-020C
    Text: APM4430K N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/12.5A, D D RDS ON = 4.5mΩ(typ.) @ VGS = 10V RDS(ON) = 7mΩ(typ.) @ VGS = 5V • • • • D D S Super High Dense Cell Design S S Reliable and Rugged G Top View of SOP − 8 SOP-8 Package


    Original     		APM4430K 0V/12 APM4430 APM4430K STD-020C PDF

    Untitled

    Abstract: No abstract text available
    Text: Bipolar 1C For Switching Power Supply Control FA7622CP E • D escrip tion The FA7622CP(E) is a DC-DC converter 1C that can directly drive a power MOSFET. This 1C has all the necessary protection functions for a power MOSFET. It is optimum for a portable equipment power supply which uses low-voltage input


    OCR Scan     		FA7622CP 600mA) 20-pin 7622P PDF