2SK669
Abstract: No abstract text available
Text: Ordering number:EN2563C N-Channel Enhancement Silicon MOSFET 2SK669 Very High-Speed Switch, Analog Switch Applications Applications Package Dimensions • Analog switches, low-pass filters, Ultrahigh-speed switches. unit:mm 2040A [2SK669] 4.0 Features 3.0 · Large yfs.
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EN2563C
2SK669
2SK669]
2SK669
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mosfet analog switch circuit
Abstract: analog switch circuit using mosfet Analog FET Switch depletion mode mosfet analog switch using mosfet depletion mode power mosfet Depletion MOSFET SWITCH MODE CURRENT SOURCE mosfet analog switch n channel depletion MOSFET
Text: CIRCUIT IDEAS FOR DESIGNERS Category: FET Schematic no. fet_11117.0 Ultra Low Voltage N-Channel Analog Switch Transmission Gate Description An EPAD MOSFET acts as an analog transmission switch when it is turned on with an appropriate gate voltage, where a conducting channel forms between the drain and the source terminals. The on-resistance of the
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ALD110802;
ALD110804;
ALD110808;
ALD110814.
mosfet analog switch circuit
analog switch circuit using mosfet
Analog FET Switch
depletion mode mosfet
analog switch using mosfet
depletion mode power mosfet
Depletion MOSFET
SWITCH MODE CURRENT SOURCE
mosfet analog switch
n channel depletion MOSFET
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fet_11117.0
Abstract: No abstract text available
Text: Category: FET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11117.0 Ultra Low Voltage N-Channel Analog Switch Transmission Gate Description An EPAD MOSFET acts as an analog transmission switch when it is turned on with an appropriate gate voltage, where a conducting channel forms between the drain and the source terminals. The on-resistance of the
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2SK583
Abstract: EN1793B
Text: Ordering number:EN1793B N-Channel Enhancement Silicon MOSFET 2SK583 Analog Switch Applications Applications Package Dimensions • Analog switches, low-pass filters. unit:mm 2005C Features [2SK583] · Large yfs. · Enhancement type. · Small ON-resistance.
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EN1793B
2SK583
2005C
2SK583]
SC-43
2SK583
EN1793B
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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G119BL
Abstract: No abstract text available
Text: V I I -j Q I «7 f r Siliconix incorporated Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • • • Differential Input Analog Signal Switching • Multiplexing • Designed to Operate with D125, D129 and D139 Integrated MOSFET for
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depletion mode power mosfet
Abstract: depletion mode mosfet mosfet analog switch circuit analog switch circuit using mosfet depletion mode Depletion MOSFET ALD110802 ALD110804 ALD110808 ALD110814
Text: CIRCUIT IDEAS FOR DESIGNERS Category: Special Circuits Schematic no. SPCKT_10004.0 0.2V Supply Voltage N-Channel Transmission Gate Description An EPAD MOSFET acts as an analog transmission gate analog switch when it is turned on with an appropriate gate voltage, where a conducting channel forms between the drain and the source terminals. The
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ALD110802;
ALD110804;
ALD110808;
ALD110814.
depletion mode power mosfet
depletion mode mosfet
mosfet analog switch circuit
analog switch circuit using mosfet
depletion mode
Depletion MOSFET
ALD110802
ALD110804
ALD110808
ALD110814
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spckt_10004.0
Abstract: No abstract text available
Text: Category: Special Circuits CIRCUIT IDEAS FOR DESIGNERS Schematic no. SPCKT_10004.0 0.2V Supply Voltage N-Channel Transmission Gate Description An EPAD MOSFET acts as an analog transmission gate analog switch when it is turned on with an appropriate gate voltage, where a conducting channel forms between the drain and the source terminals. The
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ultrasound piezo pulser circuit
Abstract: P-Channel 200V MOSFET piezoelectric transducer TC2320TG TC2320 logic level complementary MOSFET switch Dual N P-Channel 100V logic pulser piezo electric transducers logic level complementary MOSFET
Text: Product Summary Sheet TC2320TG N- and P-Channel Enhancement-Mode Dual MOSFET TC2320TG +100V 12V Applications Logic Input 10nF - Medical ultrasound transmitters - High voltage pulsers - Amplifiers - Buffers 12V Analog Switch Piezo Electric Transducer Logic Input
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TC2320TG
-100V
TC2320TG
-200V
TC2320
ultrasound piezo pulser circuit
P-Channel 200V MOSFET
piezoelectric transducer
TC2320
logic level complementary MOSFET switch
Dual N P-Channel 100V
logic pulser
piezo electric transducers
logic level complementary MOSFET
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ultrasound piezo pulser circuit
Abstract: cost of logic pulser high speed Zener Diode 200v zener diode 20a MOSFET 200v 20A n.channel logic pulser cost mosfet pair Piezo electric transducer ultrasound piezoelectric transducer for medical circuit for piezoelectric transducer
Text: Product Summary Sheet TC6320TG N- and P-Channel Enhancement-Mode MOSFET Pair TC6320TG +100V 12V Logic Input 10nF Applications - Medical ultrasound transmitters - Non-destructive evaluation - High voltage pulsers - Amplifiers 12V Analog Switch Logic Input 10nF
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TC6320TG
-100V
TC6320TG,
TC6320TG
capability/22/03
-200V
ultrasound piezo pulser circuit
cost of logic pulser
high speed Zener Diode 200v
zener diode 20a
MOSFET 200v 20A n.channel
logic pulser cost
mosfet pair
Piezo electric transducer
ultrasound piezoelectric transducer for medical
circuit for piezoelectric transducer
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STJ828SF
Abstract: No abstract text available
Text: STJ828SF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch applications. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.
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STJ828SF
OT-23F
KST-2125-000
-10mA
STJ828SF
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STJ828UF
Abstract: No abstract text available
Text: STJ828UF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.
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STJ828UF
OT-323F
KST-3059-000
-10mA
STJ828UF
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Untitled
Abstract: No abstract text available
Text: Analog Power AM3865L P & N-Channel Load Switch MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS on assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power
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AM3865L
DS-AM3865
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2SK1841
Abstract: No abstract text available
Text: Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features Package Dimensions • Large⏐yfs⏐. · Enhancement type. · Low ON resistance. unit:mm 2040A [2SK1841] 2.2 3.0 4.0 15.0 0.6
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EN4636
2SK1841
2SK1841]
2SK1841
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STJ828M
Abstract: No abstract text available
Text: STJ828M Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.
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STJ828M
O-92M
KST-I016-001
STJ828M
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STJ828EF
Abstract: kst40
Text: STJ828EF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.
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STJ828EF
OT-523F
KST-4014-000
-10mA
STJ828EF
kst40
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"marking j9"
Abstract: SOT-623 IC 4015 STJ828K kst40 sot623 marking j9 marking kst
Text: STJ828K Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.
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STJ828K
OT-623F
KST-4015-000
-10mA
"marking j9"
SOT-623
IC 4015
STJ828K
kst40
sot623
marking j9
marking kst
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SUF620EF
Abstract: marking sot 5 pin
Text: SUF620EF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • Low threshold voltage • Two STJ828 Chips in SOT-563F Package. Ordering Information Type NO. SUF620EF Marking
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SUF620EF
STJ828
OT-563F
OT-563F
KST-J016-000
-10mA
SUF620EF
marking sot 5 pin
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EN4636
Abstract: 2SK1841
Text: Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features Package Dimensions • Largeyfs. · Enhancement type. · Low ON resistance. unit:mm 2040A [2SK1841] 2.2 3.0 4.0 15.0 0.6
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EN4636
2SK1841
2SK1841]
EN4636
2SK1841
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Untitled
Abstract: No abstract text available
Text: Analog Power AM2314N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power
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AM2314N
OT-23
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Untitled
Abstract: No abstract text available
Text: Analog Power AM2398N N-Channel 60V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power
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AM2398N
OT-23
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Untitled
Abstract: No abstract text available
Text: Analog Power AMJ431P P-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power
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AMJ431P
J021-8
J021-8
DS-AMJ431
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Untitled
Abstract: No abstract text available
Text: Analog Power AM2329P P-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power
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AM2329P
OT-23
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Untitled
Abstract: No abstract text available
Text: Analog Power AMJ433P P-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power
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AMJ433P
J021-8
J021-8
DS-AMJ433
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