MOSFET 8958A Search Results

MOSFET 8958A Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

MOSFET 8958A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MOSFET 8958A Abstract: FDS 8958A FAN7310 FDS8958A Text: FDS8958A tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958A FDS8958A AN-4143: FAN7310) AN-6016: AN-6016 FAN7311) MOSFET 8958A FDS 8958A FAN7310	PDF

Catalog Datasheet

Type

Document Tags

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MOSFET 8958A

Abstract: FDS 8958A FAN7310 FDS8958A
Text: FDS8958A tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

Original

FDS8958A FDS8958A AN-4143: FAN7310) AN-6016: AN-6016 FAN7311) MOSFET 8958A FDS 8958A FAN7310

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