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    FDS8958A Search Results

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    FDS8958A Price and Stock

    UMW FDS8958A

    MOSFET N/P-CH 30V 7A 8SOP
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    DigiKey FDS8958A Reel 3,000
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    FDS8958A Digi-Reel 1
    • 1 $0.62
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    FDS8958A Cut Tape 1
    • 1 $0.62
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    onsemi FDS8958A

    MOSFET N/P-CH 30V 7A/5A 8SOIC
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    DigiKey FDS8958A Reel 2,500
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    FDS8958A Digi-Reel 1
    • 1 $0.99
    • 10 $0.667
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    FDS8958A Cut Tape 1
    • 1 $0.99
    • 10 $0.667
    • 100 $0.667
    • 1000 $0.667
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    Mouser Electronics FDS8958A 449
    • 1 $1.26
    • 10 $0.793
    • 100 $0.524
    • 1000 $0.371
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    Arrow Electronics FDS8958A 2,500 33 Weeks 2,500
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    Newark FDS8958A Cut Tape 25,708 5
    • 1 $0.863
    • 10 $0.761
    • 100 $0.526
    • 1000 $0.374
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    FDS8958A Reel 2,500
    • 1 $0.384
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    Future Electronics FDS8958A Reel 19 Weeks 2,500
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    Rochester Electronics FDS8958A 112,295 1
    • 1 $0.3099
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    • 100 $0.2913
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    TME FDS8958A 642 1
    • 1 $0.753
    • 10 $0.516
    • 100 $0.409
    • 1000 $0.387
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    Richardson RFPD FDS8958A 1
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    Chip1Stop FDS8958A Cut Tape 1,500
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    • 100 $0.442
    • 1000 $0.324
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    onsemi FDS8958A-F085

    MOSFET N/P-CH 30V 7A/5A 8SOIC
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    DigiKey FDS8958A-F085 Cut Tape
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    FDS8958A-F085 Digi-Reel 1
    • 1 $1.75
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    • 100 $1.75
    • 1000 $1.75
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    FDS8958A-F085 Reel
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    Newark FDS8958A-F085 Reel 2,500
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    Aptina Imaging FDS8958A

    Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC T/R
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    Verical FDS8958A 2,500 2,500
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    Fairchild Semiconductor Corporation FDS8958A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FDS8958A 4,007
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    FDS8958A 1,450
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    Quest Components FDS8958A 1,918
    • 1 $0.6225
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    • 100 $0.6225
    • 1000 $0.2594
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    FDS8958A 1,160
    • 1 $1.0375
    • 10 $1.0375
    • 100 $0.5188
    • 1000 $0.415
    • 10000 $0.415
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    FDS8958A 24
    • 1 $18.765
    • 10 $16.68
    • 100 $15.429
    • 1000 $15.429
    • 10000 $15.429
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    FDS8958A 18
    • 1 $2.24
    • 10 $1.792
    • 100 $1.344
    • 1000 $1.344
    • 10000 $1.344
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    Rochester Electronics FDS8958A 40,000 1
    • 1 $0.3099
    • 10 $0.3099
    • 100 $0.2913
    • 1000 $0.2634
    • 10000 $0.2634
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    Chip 1 Exchange FDS8958A 3,775
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    FDS8958A 2,090
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    Win Source Electronics FDS8958A 27,054
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    Find more FDS8958A price and stock on Findchips.com

    FDS8958A Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDS8958A Fairchild Semiconductor Dual N & P-Channel PowerTrench MOSFET Original PDF
    FDS8958A Fairchild Semiconductor Dual N and P-Channel PowerTrench MOSFET Original PDF
    FDS8958A Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDS8958A Fairchild Semiconductor Dual N & P-Channel PowerTrenchO MOSFET Original PDF
    FDS8958A Fairchild Semiconductor Dual N & P-Channel PowerTrenchO MOSFET Original PDF
    FDS8958A Fairchild Semiconductor Dual N & P-Channel PowerTrench MOSFET Original PDF
    FDS8958A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDS8958A_F085 Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V DUAL 8-SOIC Original PDF
    FDS8958A-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N/P-CH 30V 7A/5A 8SOIC Original PDF
    FDS8958A_NF073 Fairchild Semiconductor Dual N & P-Channel PowerTrench MOSFET Original PDF
    FDS8958A_NL Fairchild Semiconductor Dual N & P-Channel PowerTrench MOSFET Original PDF

    FDS8958A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8958a

    Abstract: FDS8958A FDS 8958A F63TNR F852 L86Z SOIC-16 n-Channel 12-V D-S MOSFET sot-23
    Text: June 1998 FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDS8958A 8958a FDS8958A FDS 8958A F63TNR F852 L86Z SOIC-16 n-Channel 12-V D-S MOSFET sot-23

    Untitled

    Abstract: No abstract text available
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A

    MOSFET 8958A

    Abstract: FDS 8958A FAN7310 FDS8958A
    Text: FDS8958A tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A AN-4143: FAN7310) AN-6016: AN-6016 FAN7311) MOSFET 8958A FDS 8958A FAN7310

    Untitled

    Abstract: No abstract text available
    Text: FDS8958A_F085 tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A

    FDS8958

    Abstract: FDS8958A FDS8958A-F085
    Text: FDS8958A_F085 tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958 FDS8958A-F085

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS8958A L86Z
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A CBVK741B019 F011 F63TNR F852 FDS8958A L86Z

    FDS8958A

    Abstract: No abstract text available
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A

    8958A

    Abstract: FDS 8958A FDS8958A FDS8958A application
    Text: FDS8958A tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A 8958A FDS 8958A FDS8958A application

    FDS8958A

    Abstract: No abstract text available
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A

    Untitled

    Abstract: No abstract text available
    Text: June 1998 FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDS8958A

    Untitled

    Abstract: No abstract text available
    Text: FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A

    FDS8958A

    Abstract: 58q2
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A 58q2

    FDS8958A

    Abstract: No abstract text available
    Text: FDS8958A tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A

    lcd inverter board schematic

    Abstract: fan7314 schematic diagram inverter lcd monitor 27k 3kv capacitor 15p 3kv schematic diagram lcd monitor advance 17 schematic diagram inverter FAN7314 efd2124 3kv 27k lcd inverter schematic
    Text: FAN7314 LCD Backlight Inverter Drive IC Features • High-efficiency single-stage power conversion Description ■ Wide input voltage range: 5V to 25.5V The FAN7314 provides all the control functions for use as a series parallel resonant converter as well as a pulse


    Original     		PDF FAN7314 FAN7314 30kHz 250kHz, lcd inverter board schematic schematic diagram inverter lcd monitor 27k 3kv capacitor 15p 3kv schematic diagram lcd monitor advance 17 schematic diagram inverter FAN7314 efd2124 3kv 27k lcd inverter schematic

    circuit diagram of 100 VA power inverter

    Abstract: gate drive protection inverter pwm INVERTER LCD D1N4148 lcd backlight inverter 7 pin FAN7311
    Text: FAN7311 LCD Backlight Inverter Drive IC Features Description • High-Efficiency Single-Stage Power Conversion The FAN7311 provides all the control functions for a series parallel resonant converter as well as a pulse width modulation PWM controller to develop a supply voltage. Typical


    Original     		PDF FAN7311 20-Pin frequen16 KST2222 D1N4148 circuit diagram of 100 VA power inverter gate drive protection inverter pwm INVERTER LCD D1N4148 lcd backlight inverter 7 pin

    20SSOP

    Abstract: LCD Backlight Inverter Drive IC FAN7310 LCD Monitor Inverter
    Text: FAN7310 LCD Backlight Inverter Drive Integrated Circuit Features Description „ High-Efficiency, Single-Stage Power Conversion The FAN7310 provides all the control functions for a series parallel resonant converter and contains a pulse width modulation PWM controller to develop a supply


    Original     		PDF FAN7310 30kHz 250kHz AN-4143: FAN7310) FAN7310G FAN7310GX 20SSOP LCD Backlight Inverter Drive IC FAN7310 LCD Monitor Inverter

    SN 102 lcd

    Abstract: 32 inch LCD TV SCHEMATIC lcd tv inverter board schematic schematic advance lcd backlight inverter backlight inverter circuit diagram LCD inverter transformer lcd monitor inverter board schematic 21 inch Lcd light circuit schematic diagram INVERTER BOARD control SMD IC high voltage 6 pin lcd inverter schematic
    Text: FAN7311 LCD Backlight Inverter Drive IC Features Description • High-Efficiency Single-Stage Power Conversion The FAN7311 provides all the control functions for use as a series parallel resonant converter as well as a pulse width modulation PWM controller to develop a supply


    Original     		PDF FAN7311 20-Pin SN 102 lcd 32 inch LCD TV SCHEMATIC lcd tv inverter board schematic schematic advance lcd backlight inverter backlight inverter circuit diagram LCD inverter transformer lcd monitor inverter board schematic 21 inch Lcd light circuit schematic diagram INVERTER BOARD control SMD IC high voltage 6 pin lcd inverter schematic

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    em 234 stepper

    Abstract: transistor smd marking cfr transistor BD 222 SMD ffs transistor smd transistor BD 140 working principle in TRANSISTOR BD 168 16 pin ic sgT6 ca6 smd transistor SMD transistor MARKING CODE 213 MOSFET TRANSISTOR SMD MARKING CODE 18A
    Text: TMC260/TMC261/TMC262 DATA SHEET V. 1.10 / 2011-Mar-09 1 TMC260, TMC261, TMC262 Energy saving phase stepper interface and external power and protection high resolution microstep two driver with step and direction internal (TMC260, TMC261) or stage (TMC262) with diagnostics


    Original     		PDF TMC260/TMC261/TMC262 2011-Mar-09) TMC260, TMC261, TMC262 TMC261) TMC262) TMC262 TMC26corrected em 234 stepper transistor smd marking cfr transistor BD 222 SMD ffs transistor smd transistor BD 140 working principle in TRANSISTOR BD 168 16 pin ic sgT6 ca6 smd transistor SMD transistor MARKING CODE 213 MOSFET TRANSISTOR SMD MARKING CODE 18A

    BA41-00727A

    Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m


    Original     		PDF 965GM BA41-00727A TP17351 7SZ08 TP16469 TP16470 LTST-C193TBKT-AC A3212ELH/HED55XXU12 MT539 TP16471 LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus

    RAS 0510 SUN HOLD

    Abstract: sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D GENEVA CPU : Chip Set : Remarks :


    Original     		PDF BA41-XXXXX SheP18050 TP18051 TP18052 TP18164 TP18170 TP18172 TP18178 TP18183 TP18187 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung

    SC452IMLTRT

    Abstract: BA59-01900A SADP-90FH BA92-04460A TM-00379-003 UL1571 AWG28 BA61-00631A BA44-00233A 7SZ08 BA59-01724A
    Text: - This Document can not be used without Samsung's authorization - 5. Exploded View and Part List SYSTEM T0010 I0006 T0001 I0001 M3005 G0011 W3007 X2000 T2004 I0009 M0001 G3004 G0003 I0002 B0001 B0013 I0005 B0003 B0150 B0100 5-1 D0001 - This Document can not be used without Samsung's authorization -


    Original     		PDF T0010 I0006 T0001 I0001 M3005 G0011 X2000 W3007 T2004 M0001 SC452IMLTRT BA59-01900A SADP-90FH BA92-04460A TM-00379-003 UL1571 AWG28 BA61-00631A BA44-00233A 7SZ08 BA59-01724A

    sot23 w32

    Abstract: SOT23 DMB BA39-00628A TESA4982 HED55XXU12 BA41-00725A SMD Code 12W SOT-23 A3212ELH/HED55XXU12 LF80537NE0301MN w342 9g
    Text: Main System Design location Level Parts Code Parts Description Spec.


    Original     		PDF WLL3141 BA44-00238A BA44-00243A BA44-00162A BA42-00133A BA59-02154A BA92-04714A BA99-07566A BA70-00388A BA39-00431A sot23 w32 SOT23 DMB BA39-00628A TESA4982 HED55XXU12 BA41-00725A SMD Code 12W SOT-23 A3212ELH/HED55XXU12 LF80537NE0301MN w342 9g

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H June 1998 I L D SEM IC ONDUCTO R tm FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    OCR Scan     		PDF FDS8958A