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    MOSFET 847 Search Results

    MOSFET 847 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 847 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


    Original     		PDF AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS

    eft 317 transistor

    Abstract: NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 IEC61000-4-4 MDC3105D NUD3105 Distributors and Sales Partners
    Text: 5 V Relay Driver Socket 12 V Relay Driver Socket Bipolar Relay Driver Socket - NUD3105 MOSFET Relay Driver Socket - NUD3112 Water Valve Relay Vibrator Motor Microprocessor Microprocessor 24 V Relay Driver Socket MOSFET Relay Driver Socket - NUD3124 Window


    Original     		PDF NUD3105 NUD3112 NUD3124 IEC61000-4-4 SGD525-0 SGD525/D eft 317 transistor NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 MDC3105D NUD3105 Distributors and Sales Partners

    Untitled

    Abstract: No abstract text available
    Text: SC420A TM High Speed, Combi-Sense , Synchronous Power MOSFET Driver for Mobile Applications POWER MANAGEMENT Description Features The SC420A is a cost effective Dual MOSFET Driver, incorporating Semtech’s patented Combi-SenseTM technology, designed for switching High and Low side Power


    Original     		PDF SC420A SC420A

    5252 F mosfet

    Abstract: TLP220
    Text: New Product Guide 350-V Withstanding Voltage Low-Cost Photorelays NEW PRODUCT GUIDE TLP220 Series of Photorelays features a 350-V withstanding voltage and incorporates normally open MOSFET. This Series is modification of the incorporated MOSFET chip of conventional TLP227G Series


    Original     		PDF TLP220 TLP227G TLP222G, TLP592G, TLP172G TLP192G) TLP222G-2, TLP202G) 5252 F mosfet

    1N4148

    Abstract: J-STD-020B SC1403 SC420 SC420A SC420AIMLTRT
    Text: SC420A TM High Speed, Combi-Sense , Synchronous Power MOSFET Driver for Mobile Applications POWER MANAGEMENT Description Features The SC420A is a cost effective Dual MOSFET Driver, incorporating Semtech’s patented Combi-SenseTM technology, designed for switching High and Low side Power


    Original     		PDF SC420A SC420A 3000pF MLP-12 1N4148 J-STD-020B SC1403 SC420 SC420AIMLTRT

    DS1608C-472

    Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY transistor CB 308 bd 3451
    Text: LT4351 MOSFET Diode-OR Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET


    Original     		PDF LT4351 10-pin LT4351 4351TA04 LTC1473 LTC4350 LTC4412 4351f DS1608C-472 LT4351CMS LT4351IMS MBR0530 Si4862DY transistor CB 308 bd 3451

    f12 mosfet

    Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY ceramic capacitor, .1uF diode lt 246
    Text: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies n External N-Channel MOSFETs for High Current Capability n Internal Boost Regulator Supply for MOSFET Gate Drive n Wide Input Range: 1.2V to 18V


    Original     		PDF LT4351 10-pin LTC4355 LTC4357 LTC4358 LTC4412 4351fc f12 mosfet LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY ceramic capacitor, .1uF diode lt 246

    transistor CB 308

    Abstract: SCHEMATIC DIAGRAM monitor adapter 12v 5A bd 2003 fast charge battery 410k
    Text: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies n External N-Channel MOSFETs for High Current Capability n Internal Boost Regulator Supply for MOSFET Gate Drive n Wide Input Range: 1.2V to 18V


    Original     		PDF 10-pin LT4351 4351fd transistor CB 308 SCHEMATIC DIAGRAM monitor adapter 12v 5A bd 2003 fast charge battery 410k

    MBR0530

    Abstract: bd 2003 fast charge battery diode led uv DS1608C-472 LT4351 LT4351CMS LT4351IMS Si4862DY
    Text: LT4351 MOSFET Diode-OR Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET


    Original     		PDF LT4351 10-pin LT4351 4351TA04 LTC1473 LTC4350 LTC4412 sn4351 4351fs MBR0530 bd 2003 fast charge battery diode led uv DS1608C-472 LT4351CMS LT4351IMS Si4862DY

    tlp250 application note

    Abstract: tlp250 tlp2501 TLP250 application igbt drive tlp250 TLP251
    Text: IGBT/Power MOSFET Gate Drive Photo-IC Couplers TLP250 INV /TLP250F(INV) NEW PRODUCT GUIDE IGBT / POWER MOSFET GATE DRIVE PHOTO-IC COUPLERS TLP250 (INV) / TLP250F (INV) The Toshiba TLP250 (INV) and TLP250F (INV) are 8-pin photocouplers designed exclusively for use in IGBT


    Original     		PDF TLP250 /TLP250F TLP250 TLP250F tlp250 application note tlp2501 TLP250 application igbt drive tlp250 TLP251

    NPC-1200

    Abstract: 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad
    Text: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE S External MOSFET connection: by leaving the external MOSFET external to the IC, you can select avalanche proof devices which, in certain cases e.g. low output


    Original     		PDF AND8023/D NCP1200 r14525 NPC-1200 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad

    Untitled

    Abstract: No abstract text available
    Text: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES n n n n n n n n n Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET Gate Drive Wide Input Range: 1.2V to 18V


    Original     		PDF LT4351 4351fb

    JESD22-A115

    Abstract: 3C225
    Text: LF PA K PSMN3R2-25YLC N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN3R2-25YLC JESD22-A115 3C225

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B PSMN3R3-80PS N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220 Rev. 1 — 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is


    Original     		PDF PSMN3R3-80PS O-220 O-220

    Untitled

    Abstract: No abstract text available
    Text: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES n n n n n n n n n Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET Gate Drive Wide Input Range: 1.2V to 18V


    Original     		PDF LT4351 10-pin LTC4355 LTC4357 LTC4358 LTC4412 4351fd

    PSMN3R5-80PS,127

    Abstract: No abstract text available
    Text: TO -22 0A B PSMN3R5-80PS N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 Rev. 01 — 28 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is


    Original     		PDF PSMN3R5-80PS O-220 O-220 PSMN3R5-80PS,127

    175C

    Abstract: No abstract text available
    Text: TO -22 0A B PSMN3R5-80PS N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 Rev. 02 — 4 March 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is


    Original     		PDF PSMN3R5-80PS O-220 O-220 175C

    SMD diode s13

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 VDS (V) - 20 TrenchFET Power MOSFET Typical ESD Protection: 3000 V Gate-Source OVP Material categorization:


    Original     		PDF Si8473EDB 8473E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SMD diode s13

    LTC4357

    Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY
    Text: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES n n n n n n n n n Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET Gate Drive Wide Input Range: 1.2V to 18V


    Original     		PDF LT4351 10-pin LTC4355 LTC4357 LTC4358 LTC4412 4351fb LTC4357 LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY

    si84

    Abstract: si8475
    Text: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 18-Jul-08 si84 si8475

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


    Original     		PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si8473

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 18-Jul-08 si8473

    Untitled

    Abstract: No abstract text available
    Text: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 25hay 11-Mar-11