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    MOSFET 830 Search Results

    MOSFET 830 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 830 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDH210N08

    SCH2807

    Abstract: MARKING QG
    Text: SCH2807 Ordering number : ENN8215 SCH2807 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1407 and a schottky barrier diode (SS05015)


    Original     		PDF SCH2807 ENN8215 SCH1407) SS05015) SCH2807 MARKING QG

    MCH3447

    Abstract: MCH5824 marking xa
    Text: MCH5824 Ordering number : ENN8201 MCH5824 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3447 and a schottky barrier diode (SS05015)


    Original     		PDF MCH5824 ENN8201 MCH3447) SS05015) MCH3447 MCH5824 marking xa

    SiC POWER MOSFET

    Abstract: sic MOSFET APTMC60TLM14CAG
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG

    at 8515

    Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8 mosfet 23 Tsop-6 150C1
    Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead


    Original     		PDF AAT8515 AAT8515 SC70JW-8 at 8515 AAT8515IJS-T1 mosfet 23 Tsop-6 150C1

    AAT8543

    Abstract: AAT8543IJS-T1 SC70JW-8
    Text: AAT8543 20V P-Channel Power MOSFET General Description Features The AAT8543 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead


    Original     		PDF AAT8543 AAT8543 SC70JW-8 AAT8543IJS-T1

    Untitled

    Abstract: No abstract text available
    Text: SCH2811 Ordering number : ENA0440 SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package


    Original     		PDF ENA0440 SCH2811 A0440-6/6

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD19N10L

    diode 22b3

    Abstract: 22B3
    Text: PD - 96140 IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l


    Original     		PDF IRFH7932PbF 078mH, diode 22b3 22B3

    Untitled

    Abstract: No abstract text available
    Text: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l


    Original     		PDF 6140A IRFH7932PbF 071mH,

    Untitled

    Abstract: No abstract text available
    Text: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS


    Original     		PDF IRFH7932PbF IRFH7932TRPbF IRFH7932TR2PbF IRFH7934PbF

    Untitled

    Abstract: No abstract text available
    Text: FQB19N20C N-Channel QFET MOSFET 200 V, 19 A, 170 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQB19N20C

    IRF Power MOSFET code marking

    Abstract: 24v 12v 20A regulator IRFH7932pbF DM marking code
    Text: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l


    Original     		PDF 6140A IRFH7932PbF 071mH, IRF Power MOSFET code marking 24v 12v 20A regulator IRFH7932pbF DM marking code

    AAT8512

    Abstract: AAT8512IJS-T1 SC70JW-8
    Text: AAT8512 28V P-Channel Power MOSFET General Description Features The AAT8512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally


    Original     		PDF AAT8512 AAT8512 AAT8512IJS-T1 SC70JW-8

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD19N10L

    Untitled

    Abstract: No abstract text available
    Text: N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 m Features Description ® ® SuperFET II FRFET MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET, utilizes advanced charge-balance technology for outstandingly low on-state resistance and


    Original     		PDF

    NX3008NBKMB

    Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
    Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 DFN1006B-3, AEC-Q101 Q3/2012 NX3008NBKMB BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS

    FQPF16N25C

    Abstract: FQPF*16n25c FQP16N25C
    Text: FQP16N25C / FQPF16N25C N-Channel QFET MOSFET 250 V, 15.6 A, 270 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQP16N25C/FQPF16N25C FQP16N25C FQPF16N25C FQPF16N25C FQPF*16n25c

    Untitled

    Abstract: No abstract text available
    Text: FQD12N20L / FQU12N20L N-Channel QFET MOSFET 200 V, 9.0 A, 280 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD12N20L FQU12N20L FQU12N20L

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20L / FQU10N20L N-Channel QFET MOSFET 200 V, 7.6 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD10N20L FQU10N20L FQU10N20L

    AAT8515IJS

    Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8
    Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally


    Original     		PDF AAT8515 AAT8515 SC70JW-8 AAT8515IJS-T1 048REF AAT8515IJS AAT8515IJS-T1 SC70JW-8

    Untitled

    Abstract: No abstract text available
    Text: FQA90N15 / FQA90N15_F109 N-Channel QFET MOSFET 150 V, 90 A, 18 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQA90N15

    fqd19n10l

    Abstract: No abstract text available
    Text: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD19N10L FQD19N10L