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    MOSFET 80 N02G Search Results

    MOSFET 80 N02G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 80 N02G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    80n02g

    Abstract: n02g 80n02 80 n02g mosfet 80 n02g 80-N02G mosfet on n02g ON n02g 80-N02 85 n02g
    Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • These Devices are Pb−Free and are RoHS Compliant


    Original     		NTD80N02 NTD80N02/D 80n02g n02g 80n02 80 n02g mosfet 80 n02g 80-N02G mosfet on n02g ON n02g 80-N02 85 n02g PDF

    n02g

    Abstract: 80 n02g 80N02
    Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • These Devices are Pb−Free and are RoHS Compliant


    Original     		NTD80N02 NTD80N02/D n02g 80 n02g 80N02 PDF

    85 n02g

    Abstract: NTD85N02R
    Text: NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N−Channel, DPAK/IPAK http://onsemi.com Features • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Low Gate Charge to Minimize Switching Losses


    Original     		NTD85N02R NTD85N02R/D 85 n02g NTD85N02R PDF

    n02g

    Abstract: 85 n02g 85N02G ON n02g mosfet on n02g 85n02 80 n02g 369D NTD85N02R 85N02R
    Text: NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N−Channel, DPAK/IPAK http://onsemi.com Features • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Low Gate Charge to Minimize Switching Losses


    Original     		NTD85N02R NTD85N02R/D n02g 85 n02g 85N02G ON n02g mosfet on n02g 85n02 80 n02g 369D NTD85N02R 85N02R PDF

    n02g

    Abstract: 85N02G 85 n02g mosfet 80 n02g 85N02R on n02g 85N02RG NTD85N02R mosfet on n02g DPak Package size
    Text: NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N−Channel, DPAK/IPAK http://onsemi.com Features • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Low Gate Charge to Minimize Switching Losses


    Original     		NTD85N02R NTD85N02R/D n02g 85N02G 85 n02g mosfet 80 n02g 85N02R on n02g 85N02RG mosfet on n02g DPak Package size PDF