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    MOSFET 6993 Search Results

    MOSFET 6993 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 6993 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7611DN Si7611DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7611DN Si7611DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7611DN Si7611DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si7611DN-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7611DN Si7611DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7611DN Si7611DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4104

    Abstract: SI4104DY
    Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • TrenchET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT


    Original     		Si4104DY Si4104DY-T1-E3 18-Jul-08 Si4104 PDF

    SI7611dn-T1-gE3

    Abstract: No abstract text available
    Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7611DN Si7611DN-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7611DN Si7611DN-T1-GE3 11-Mar-11 PDF

    Si4104DY

    Abstract: si4104
    Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • TrenchET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT


    Original     		Si4104DY Si4104DY-T1-E3 08-Apr-05 si4104 PDF

    Si7611DN-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7611DN Si7611DN-T1-GE3 08-Apr-05 PDF

    Si3456CDV

    Abstract: Si3456CDV-T1-E3
    Text: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch


    Original     		Si3456CDV Si3456CDV-T1-E3 18-Jul-08 PDF

    SI3456CDV

    Abstract: No abstract text available
    Text: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch


    Original     		Si3456CDV Si3456CDV-T1-E3 08-Apr-05 PDF

    Si4626ADY

    Abstract: No abstract text available
    Text: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4626ADY Si4626ADY-T1-E3 Si4626ADY-T1-GE3 18-Jul-08 PDF

    Si4626ADY

    Abstract: No abstract text available
    Text: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT


    Original     		Si4626ADY Si4626ADY-T1-E3 08-Apr-05 PDF

    Si4626ADY

    Abstract: No abstract text available
    Text: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT


    Original     		Si4626ADY Si4626ADY-T1-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4626ADY Si4626ADY-T1-E3 Si4626ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N15-18P O-220AB SUP90N15-18P-E3 11-Mar-11 PDF

    SUP90N15-18P

    Abstract: SUP90N15-18P-E3
    Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N15-18P O-220AB SUP90N15-18P-E3 11-Mar-11 SUP90N15-18P SUP90N15-18P-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N15-18P O-220AB SUP90N15-18P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4626ADY Si4626ADY-T1-E3 Si4626ADY-T1-GE3 11-Mar-11 PDF

    SUP90N15-18P

    Abstract: SUP90N15-18P-E3
    Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N15-18P O-220AB SUP90N15-18P-E3 08-Apr-05 SUP90N15-18P SUP90N15-18P-E3 PDF

    SUP90N15-18P

    Abstract: SUP90N15-18P-E3
    Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N15-18P O-220AB SUP90N15-18P-E3 18-Jul-08 SUP90N15-18P SUP90N15-18P-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N15-18P O-220AB SUP90N15-18P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N15-18P O-220AB SUP90N15-18P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF