SQ3456EV
Abstract: SQ3456EV-T1-GE3
Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQ3456EV
2002/95/EC
AEC-Q101
SQ3456EV-T1-GE3
18-Jul-08
SQ3456EV
SQ3456EV-T1-GE3
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Untitled
Abstract: No abstract text available
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew
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SQ3456EV
AEC-Q101
SQ3456EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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marking code 46 tsop-6
Abstract: sQ3456ev
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew
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SQ3456EV
AEC-Q101
SQ3456EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code 46 tsop-6
sQ3456ev
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Untitled
Abstract: No abstract text available
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew
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SQ3456EV
AEC-Q101
SQ3456EV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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PDF
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SQ3456EV
2002/95/EC
AEC-Q101
SQ3456EV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3456EV
2002/95/EC
AEC-Q101
SQ3456EV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V 0.057 RDS(on) (Ω) at VGS = 2.5 V 0.090 ID (A) 3.0 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
2002/95/EC
AEC-Q101
SQ3442EV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
2002/95/EC
AEC-Q101
SQ3442EV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
2002/95/EC
AEC-Q101
SQ3442EV-T1-GE3
11-Mar-11
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sQ3456ev
Abstract: No abstract text available
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3456EV
AEC-Q101
2002/95/EC
SQ3456EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sQ3456ev
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Untitled
Abstract: No abstract text available
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SQ3456EV
AEC-Q101
2002/95/EC
SQ3456EV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ3442EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
AEC-Q101
2002/95/EC
SQ3442EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQ3442EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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PDF
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SQ3442EV
AEC-Q101
2002/95/EC
SQ3442EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQ3442EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
AEC-Q101
2002/95/EC
SQ3442EV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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A 2531
Abstract: 4562 AN609 95148
Text: Si8461DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si8461DB
AN609,
02-Jun-09
A 2531
4562
AN609
95148
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4580 N
Abstract: AN609
Text: SiE868DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiE868DF
AN609,
02-Jun-09
4580 N
AN609
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AN609
Abstract: Si2305CDS 97556
Text: Si2305CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si2305CDS
AN609,
02-Jun-09
AN609
97556
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Diode SMD SJ 63a
Abstract: smd diode sj 63a SMD code pp mosfet 8-pin 1663a sanyo smd
Text: LIN Doc # ; 1 6 6 2 i i N M T he I I C n f i n i t e f E ï M R O L E P o w e r C of T L X 1 6 6 2 /6 2 A , L X 1 6 6 3 /6 3 A i y R O I N I C S in g le -C h ip P r o g r a m m a b le P W M C o n t r o ller s w ith 5 -B it D A C S n n o v a t i o n P r o d u c t i o n
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LX1662/62A
LX1663/63A
Diode SMD SJ 63a
smd diode sj 63a
SMD code pp mosfet
8-pin 1663a
sanyo smd
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diode sy 170/cs 1668
Abstract: cs 1668
Text: LIN Doc # ; 1 6 6 8 LmrniTY M T h e I I n f i n i t e C k P O E L E C o w e r o f T k O I N I C L X 1668 P S rogrammable n n o v a t i o n P M r e l i m i n a r y DESCRIPTION T h e LX 1668 is a M o n o lith ic S w itc h in g R egu lator C o n tr o lle r IC designed to p ro
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Untitled
Abstract: No abstract text available
Text: LIN Doc #; 1668 L i m M T L X 1668 Y Program m able M ultiple Output M I C R O E L E C T R O N I C S T h e I n f i n i t e P o w e r o f P R O D U C T I O N I n n o v a t i o n DESCRIPTION T h e LX 1668 is a M o n o lith ic S w itc h in g R egu lator C o n tr o lle r IC designed to p ro
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LX1668
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Untitled
Abstract: No abstract text available
Text: L I N Doc L i m M T L X 1668 Y Pro gram m ab le M u ltip le O u tp ut M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r o f I n n o v a t i o n P r e l i m i n a r y DESCRIPTION T h e LX 1668 is a M o n o lith ic S w itc h in g R egu lator C o n tr o lle r IC designed to p ro
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LX1668
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SMD Capacitor ED 63A
Abstract: No abstract text available
Text: L I N Do c # ; 166 2 L X 1 6 6 2 /6 2 A , L X 1 6 6 3 /6 3 A S in gle-C hip P ro g ra m m a b le P W M C o n t r o lle r s w ith 5 - B i t TH I n f i n i t e P o w e r o f I n n o v a t i o n P r o d u c t i o n DESC R IPTIO N The L X 1 6 6 2 /6 2 A an d L X 1 6 6 3 /6 3 A are
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AX 1668 F
Abstract: No abstract text available
Text: LIN Doc # ; 1668 î i n f u n L X 1668 ï ï t P r o g r a m m a b l e M ultiple O u t pu t D C : D C C o n t r o l l e r M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r I o f P n n o v a t i o n r e l i m i n a r y DESCRIPTION T h e LX 1668 is a M o n o lith ic S w itc h in g
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Untitled
Abstract: No abstract text available
Text: LIN Doc L X 1669 W F M T Y M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r o f P r o g r a m m a b l e I n n o v a t i o n provide a low cost, high perfo rm an ce adjustable p o w e r su p p ly for a d v an ced m icroprocessors a n d o th er applications
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