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    MOSFET 6504 Search Results

    MOSFET 6504 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 6504 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SQ3456EV

    Abstract: SQ3456EV-T1-GE3
    Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		PDF SQ3456EV 2002/95/EC AEC-Q101 SQ3456EV-T1-GE3 18-Jul-08 SQ3456EV SQ3456EV-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew


    Original     		PDF SQ3456EV AEC-Q101 SQ3456EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    marking code 46 tsop-6

    Abstract: sQ3456ev
    Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew


    Original     		PDF SQ3456EV AEC-Q101 SQ3456EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code 46 tsop-6 sQ3456ev

    Untitled

    Abstract: No abstract text available
    Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew


    Original     		PDF SQ3456EV AEC-Q101 SQ3456EV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3456EV 2002/95/EC AEC-Q101 SQ3456EV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3456EV 2002/95/EC AEC-Q101 SQ3456EV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V 0.057 RDS(on) (Ω) at VGS = 2.5 V 0.090 ID (A) 3.0 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3442EV 2002/95/EC AEC-Q101 SQ3442EV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3442EV 2002/95/EC AEC-Q101 SQ3442EV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3442EV 2002/95/EC AEC-Q101 SQ3442EV-T1-GE3 11-Mar-11

    sQ3456ev

    Abstract: No abstract text available
    Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3456EV AEC-Q101 2002/95/EC SQ3456EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sQ3456ev

    Untitled

    Abstract: No abstract text available
    Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3456EV AEC-Q101 2002/95/EC SQ3456EV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQ3442EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3442EV AEC-Q101 2002/95/EC SQ3442EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQ3442EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3442EV AEC-Q101 2002/95/EC SQ3442EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQ3442EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3442EV AEC-Q101 2002/95/EC SQ3442EV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A 2531

    Abstract: 4562 AN609 95148
    Text: Si8461DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si8461DB AN609, 02-Jun-09 A 2531 4562 AN609 95148

    4580 N

    Abstract: AN609
    Text: SiE868DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiE868DF AN609, 02-Jun-09 4580 N AN609

    AN609

    Abstract: Si2305CDS 97556
    Text: Si2305CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2305CDS AN609, 02-Jun-09 AN609 97556

    Diode SMD SJ 63a

    Abstract: smd diode sj 63a SMD code pp mosfet 8-pin 1663a sanyo smd
    Text: LIN Doc # ; 1 6 6 2 i i N M T he I I C n f i n i t e f E ï M R O L E P o w e r C of T L X 1 6 6 2 /6 2 A , L X 1 6 6 3 /6 3 A i y R O I N I C S in g le -C h ip P r o g r a m m a b le P W M C o n t r o ller s w ith 5 -B it D A C S n n o v a t i o n P r o d u c t i o n


    OCR Scan     		PDF LX1662/62A LX1663/63A Diode SMD SJ 63a smd diode sj 63a SMD code pp mosfet 8-pin 1663a sanyo smd

    diode sy 170/cs 1668

    Abstract: cs 1668
    Text: LIN Doc # ; 1 6 6 8 LmrniTY M T h e I I n f i n i t e C k P O E L E C o w e r o f T k O I N I C L X 1668 P S rogrammable n n o v a t i o n P M r e l i m i n a r y DESCRIPTION T h e LX 1668 is a M o n o lith ic S w itc h in g R egu lator C o n tr o lle r IC designed to p ro ­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: LIN Doc #; 1668 L i m M T L X 1668 Y Program m able M ultiple Output M I C R O E L E C T R O N I C S T h e I n f i n i t e P o w e r o f P R O D U C T I O N I n n o v a t i o n DESCRIPTION T h e LX 1668 is a M o n o lith ic S w itc h in g R egu lator C o n tr o lle r IC designed to p ro ­


    OCR Scan     		PDF LX1668

    Untitled

    Abstract: No abstract text available
    Text: L I N Doc L i m M T L X 1668 Y Pro gram m ab le M u ltip le O u tp ut M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r o f I n n o v a t i o n P r e l i m i n a r y DESCRIPTION T h e LX 1668 is a M o n o lith ic S w itc h in g R egu lator C o n tr o lle r IC designed to p ro ­


    OCR Scan     		PDF LX1668

    SMD Capacitor ED 63A

    Abstract: No abstract text available
    Text: L I N Do c # ; 166 2 L X 1 6 6 2 /6 2 A , L X 1 6 6 3 /6 3 A S in gle-C hip P ro g ra m m a b le P W M C o n t r o lle r s w ith 5 - B i t TH I n f i n i t e P o w e r o f I n n o v a t i o n P r o d u c t i o n DESC R IPTIO N The L X 1 6 6 2 /6 2 A an d L X 1 6 6 3 /6 3 A are


    OCR Scan     		PDF

    AX 1668 F

    Abstract: No abstract text available
    Text: LIN Doc # ; 1668 î i n f u n L X 1668 ï ï t P r o g r a m m a b l e M ultiple O u t pu t D C : D C C o n t r o l l e r M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r I o f P n n o v a t i o n r e l i m i n a r y DESCRIPTION T h e LX 1668 is a M o n o lith ic S w itc h in g


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: LIN Doc L X 1669 W F M T Y M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r o f P r o g r a m m a b l e I n n o v a t i o n provide a low cost, high perfo rm an ce adjustable p o w e r su p p ly for a d v an ced m icroprocessors a n d o th er applications


    OCR Scan     		PDF