mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
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fdd7n25
Abstract: fdd7n25lz
Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD7N25LZ
FDD7N25LZ
fdd7n25
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CMF20120D
Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
JEDEC24
mosfet 1200V
RB160M
6N137
IXDI414
RB160M-60
DMOS SiC
electronic transformer halogen 12v
MOSFET 800V 10A
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Untitled
Abstract: No abstract text available
Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ Features Description • RDS on = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD7N25LZ
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40N60C
Abstract: ISOPLUS247
Text: Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60C VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM E153432 MOSFET Symbol
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ISOPLUS247TM
40N60C
247TM
E153432
40N60C
ISOPLUS247
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TO247AD
Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions
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40N60C
ISOPLUS247TM
247TM
E153432
TO247AD
TO247AD package
40n60c
CoolMOS Power Transistor
ISOPLUS247
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PHILIPS MOSFET MARKING
Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET
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M3D088
BF1107
SCA59
115102/00/01/pp8
PHILIPS MOSFET MARKING
passive loopthrough
n channel depletion MOSFET
mosfet 5130
Q 817
mosfet K 2865
115102
4466 8 pin mosfet pin voltage
marking code 10 sot23
BF1107
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Untitled
Abstract: No abstract text available
Text: INN20x3-20x5 InnoSwitch-CH Family Off-Line CV/CC Flyback Switcher IC with Integrated MOSFET, Synchronous Rectification and Feedback Product Highlights Highly Integrated, Compact Footprint • Incorporates flyback controller, 650 V MOSFET, secondary-side SR FET
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INN20x3-20x5
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EE1621
Abstract: No abstract text available
Text: INN20x3-20x5 InnoSwitch-CH Family Off-Line CV/CC Flyback Switcher IC with Integrated MOSFET, Synchronous Rectification and Feedback Product Highlights Highly Integrated, Compact Footprint • Incorporates flyback controller, 650 V MOSFET, secondary-side SR FET
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INN20x3-20x5
EE1621
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mosfet K 2865
Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET
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M3D088
BF1107
BF1107
SCA60
115102/00/02/pp8
mosfet K 2865
PHILIPS RF MOSFET depletion MARKING
PHILIPS MOSFET MARKING
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eft 317 transistor
Abstract: NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 IEC61000-4-4 MDC3105D NUD3105 Distributors and Sales Partners
Text: 5 V Relay Driver Socket 12 V Relay Driver Socket Bipolar Relay Driver Socket - NUD3105 MOSFET Relay Driver Socket - NUD3112 Water Valve Relay Vibrator Motor Microprocessor Microprocessor 24 V Relay Driver Socket MOSFET Relay Driver Socket - NUD3124 Window
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NUD3105
NUD3112
NUD3124
IEC61000-4-4
SGD525-0
SGD525/D
eft 317 transistor
NUD3160
636 MOSFET TRANSISTOR
MDC3105
SGD525
datasheet relay 346 766
MDC3105D
NUD3105
Distributors and Sales Partners
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KMB010P
Abstract: KMB010P30QA 30QA
Text: SEMICONDUCTOR KMB010P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.
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KMB010P30QA
100ms
KMB010P
KMB010P30QA
30QA
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Untitled
Abstract: No abstract text available
Text: PD- 93898 PROVISIONAL IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRF7451
AN1001)
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Untitled
Abstract: No abstract text available
Text: AOH3110 100V N-Channel MOSFET General Description Product Summary The AOH3110 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,
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AOH3110
AOH3110
OT223
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB010P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for Battery pack.
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KMB010P30QA
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S 566 b
Abstract: IRF7471
Text: PD- 94036A IRF7471 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance
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4036A
IRF7471
Volt252-7105
S 566 b
IRF7471
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Untitled
Abstract: No abstract text available
Text: PD - 93886C IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l l l Ultra-Low Gate Impedance
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93886C
IRF7460
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Untitled
Abstract: No abstract text available
Text: PD- 93893A IRF7450 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001
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3893A
IRF7450
AN1001)
IA-48
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Untitled
Abstract: No abstract text available
Text: PD- TBD FOR REVIEW ONLY PROVISIONAL IRF7450 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See
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IRF7450
AN1001)
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Untitled
Abstract: No abstract text available
Text: PD- 93951A IRF7469 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l l l Ultra-Low Gate Impedance
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3951A
IRF7469
IA-48
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irf7452
Abstract: No abstract text available
Text: PD- 93897 IRF7452 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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IRF7452
AN1001)
irf7452
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FIL-3C
Abstract: to-92 mosfet 13T13
Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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T0257AB
SM8F13*
SM8F33*
SM8F23*
SM8F43*
T0258AA
FT0258AA
HDS100
FIL-3C
to-92 mosfet 13T13
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Untitled
Abstract: No abstract text available
Text: SENTECH C OR P SflE » • filBS lBS POWER MOSFET’s IN HERMETIC 12 PIN ISOLATED PACKAGE □ D 0 2 cm SM4F151S* SM4F351S* 341 SM4F251S* SM4F451S* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM4F151S*
SM4F351S*
SM4F251S*
SM4F451S*
T0254AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM6F151*
SM6F251*
SM6F351*
SM6F451*
T0254AA
T0258AA
FT0258AA
HDS100
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