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    MOSFET 600V 3A Search Results

    MOSFET 600V 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 600V 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQP3N60C

    Abstract: mosfet 600V 100A
    Text: TM QFET FQP3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP3N60C FQP3N60C mosfet 600V 100A

    FQB3N60C

    Abstract: FQB3N60CTM mosfet 600V 3A
    Text: TM QFET FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3N60C FQB3N60C FQB3N60CTM mosfet 600V 3A

    3N60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF QW-R502-110 3N60

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 3N60K 3N60K O-220F O-220F2 O-252 QW-R502-838

    Untitled

    Abstract: No abstract text available
    Text: TM QFET FQP3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP3N60C

    3N60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N60A Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		PDF 3N60A 3N60A QW-R502-610 3N60

    FQB3N60C

    Abstract: FQB3N60CTM 3A, 50V BRIDGE
    Text: QFET TM FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3N60C FQB3N60C FQB3N60CTM 3A, 50V BRIDGE

    3N60Z

    Abstract: 3N60ZG-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N60Z Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 3N60Z 3N60Z O-220F QW-R502-744 3N60ZG-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 3N60K 3N60K QW-R502-838

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF QW-R502-110

    RG 2006 10A 600V

    Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
    Text: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD3N60C FQU3N60C FQU3N60C RG 2006 10A 600V FQU3N60CTU FQD3N60CTF FQD3N60CTM

    Untitled

    Abstract: No abstract text available
    Text: STD3NM60 STD3NM60-1 N-CHANNEL 600V - 1.4Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD3NM60 600V < 1.6 Ω 3A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF STD3NM60 STD3NM60 STD3NM60-1 O-252 O-251

    Untitled

    Abstract: No abstract text available
    Text: STD3NM60 STD3NM60-1 N-CHANNEL 600V - 1.4Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD3NM60 600V < 1.6 Ω 3A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF STD3NM60 STD3NM60-1 O-252 O-251

    2S400

    Abstract: stp3nc60fp STP3NC60
    Text: STP3NC60 STP3NC60FP N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP PowerMesh II MOSFET TYPE VDSS RDS on ID STP3NC60 600 V < 3.6 Ω 3A STP3NC60FP 600V < 3.6 Ω 3A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK


    Original     		PDF STP3NC60 STP3NC60FP O-220/TO-220FP 2S400 stp3nc60fp STP3NC60

    STP3NC60FP

    Abstract: STP3NC60 STP3NC60 MOSFET
    Text: STP3NC60 STP3NC60FP N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP PowerMesh II MOSFET TYPE VDSS RDS on ID STP3NC60 600 V < 3.6 Ω 3A STP3NC60FP 600V < 3.6 Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STP3NC60 STP3NC60FP O-220/TO-220FP O-220FP O-220 STP3NC60FP STP3NC60 STP3NC60 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N60K-MT Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60K-MT is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 3N60K-MT 3N60K-MT QW-R205-044

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPL60R650P6S DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPL60R650P6S 1Description ThinPAK5x6


    Original     		PDF IPL60R650P6S

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R600P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPP60R600P6,IPA60R600P6,IPD60R600P6 1Description


    Original     		PDF IPx60R600P6 IPP60R600P6, IPA60R600P6, IPD60R600P6 O-220

    STP3NC60

    Abstract: STP3NC60FP
    Text: STP3NC60 STP3NC60FP N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP3NC60 600 V <3.6 Ω 3A STP3NC60FP 600V <3.6 Ω 2A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STP3NC60 STP3NC60FP O-220/TO-220FP O-220FP O-220 STP3NC60 STP3NC60FP

    Untitled

    Abstract: No abstract text available
    Text: KSM3N60C 600V N-Channel MOSFET TO-220 Features • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect


    Original     		PDF KSM3N60C O-220

    STD2NC60

    Abstract: No abstract text available
    Text: STD2NC60 N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NC60 600V < 3.6Ω 2A TYPICAL RDS(on) = 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF STD2NC60 STD2NC60

    STD2NC60

    Abstract: No abstract text available
    Text: STD2NC60 N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NC60 600V < 3.6Ω 2A TYPICAL RDS(on) = 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF STD2NC60 STD2NC60

    FQD3N60C

    Abstract: FQD3N60CTF FQD3N60CTM
    Text: TM QFET FQD3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3N60C FQD3N60C FQD3N60CTF FQD3N60CTM

    zener diode 4.7 v

    Abstract: No abstract text available
    Text: STP4NM60 N-CHANNEL 600V - 1.4Ω - 4A TO-220 Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP4NM60 600V < 1.6 Ω 4A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF O-220 STP4NM60 O-220 zener diode 4.7 v