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    MOSFET 55N03 Search Results

    MOSFET 55N03 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 55N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    55n03

    Abstract: MOSFET 55N03 ir 55n03 MTN55N03J3 DSA006750
    Text: Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN55N03J3 BVDSS ID RDSON 25V 55A 6mΩ Features • Dynamic dv/dt Rating • Simple Drive Requirement • Repetitive Avalanche Rated


    Original     		PDF C411J3 MTN55N03J3 O-252 UL94V-0 55n03 MOSFET 55N03 ir 55n03 MTN55N03J3 DSA006750

    Untitled

    Abstract: No abstract text available
    Text: SSD55N03 55A, 25V, RDS ON 6mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SID55N03 provide the designer with the best combination of fast switching,ruggedized device design,


    Original     		PDF SSD55N03 O-252 SID55N03 O-252 55N03 16-Jun-2011

    kc-1206

    Abstract: manual FW82801BA motherboard cd 75232 INTEL FW82801BA manual Intel 815 FW82815 INTEL FW82801BA motherboard schematic diagram motor control MC60 manual intel chipset fw82801ba ABIT-SL30 bc227
    Text: Intel 815E Scalable Performance Board Development Kit Manual April 2001 Order Number: 273432-003 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability


    Original     		PDF Index-111 kc-1206 manual FW82801BA motherboard cd 75232 INTEL FW82801BA manual Intel 815 FW82815 INTEL FW82801BA motherboard schematic diagram motor control MC60 manual intel chipset fw82801ba ABIT-SL30 bc227

    MOSFET 55N03

    Abstract: 55n03
    Text: TAIW AN s TSM55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin Definition; 1. Gate V DS V 2. Drain 3. Source 25 R os^m O ) I d (A) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2 3 Features Block Diagram ♦ Advance Trench Proce s s Tech no logy


    OCR Scan     		PDF TSM55N03 O-252 TSM55N MOSFET 55N03 55n03

    MOSFET 55N03

    Abstract: No abstract text available
    Text: TAIW AN s TSM55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin D efinition; 1. Gate 2. Drain 3. Source & V DS V R os^m O ) Id (A) 6 @ V cs = 1 û V 30 9 @ V<;s z 4.5V 30 25 1 2 3 Features Block Diagram ♦ A dvance Trench Proce s s T ech n o logy


    OCR Scan     		PDF TSM55N03 O-252 MOSFET 55N03

    55n03

    Abstract: marking 1AJ MOSFET 55N03 TSM55N03
    Text: s TAIWAN TSM55N03 S E M IC O N D U C T O R 25V N-Channel MOSFET pb RoHS C O M P L IA N C E TO-252 PRODUCT SUM M ARY Pin Definition: 1. Gate V o s (V ) 2. Drain 3. Source /Ù 7 f T O %T x, 25 R os^m O ) I d (A ) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2~3


    OCR Scan     		PDF TSM55N03 O-252 TSM55NÃ O-252 55n03 marking 1AJ MOSFET 55N03 TSM55N03