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    MOSFET 50G Search Results

    MOSFET 50G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 50G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PowerPAK SO-8

    Abstract: SiR890DP
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		SiR890DP SiR890DP-T1-GE3 18-Jul-08 PowerPAK SO-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		SiR890DP SiR890DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		SiR890DP SiR890DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		SiR890DP SiR890DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiR890DP

    Abstract: No abstract text available
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		SiR890DP SiR890DP-T1-GE3 11-Mar-11 PDF

    SiR890DP

    Abstract: No abstract text available
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		SiR890DP SiR890DP-T1-GE3 70trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		SiR890DP SiR890DP-T1-GE3 70hay 11-Mar-11 PDF

    81214

    Abstract: SiR890DP
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 RoHS COMPLIANT • Low-Side MOSFET in Synchronous Buck dc-to-dc


    Original     		SiR890DP SiR890DP-T1-GE3 18-Jul-08 81214 PDF

    AEN 6

    Abstract: BD2270HFV DIGITAL AUDIO MOSFET CATALOG 500pf 1005
    Text: Nch MOSFET Driver IC for Load Switching BD2270HFV ● Outline ● Dimensions Unit: mm The BD2270HFV is an Nch MOSFET driver IC that integrates a charge pump driver and discharge circuit, enabling configuration of a high performance load switch circuit. In addition, analog control input allows


    Original     		BD2270HFV BD2270HFV 500pF 50G5675E AEN 6 DIGITAL AUDIO MOSFET CATALOG 500pf 1005 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS612EDNT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)f, g 50 50 50 RDS(on) () Max. 0.0039 at VGS = 4.5 V 0.0042 at VGS = 3.7 V 0.0058 at VGS = 2.5 V • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS612EDNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC S • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		SiR892DP SiR892DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    BUK110-50GL

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface


    OCR Scan     		BUK110-50GL BUK110-50GL OT404 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


    OCR Scan     		BUK100-50GL iSL25 PDF

    C5024

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


    OCR Scan     		BUK102-50GL C5024 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


    OCR Scan     		BUK100-50GL BUK100-50GL PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


    OCR Scan     		BUK102-50GL BUK102-50GL PDF

    BUK1D1-50GL

    Abstract: 8UK101-50GL
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


    OCR Scan     		BUK101-50GL Fig-23. BUK1D1-50GL 8UK101-50GL PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a


    OCR Scan     		BUK110-50GL isl25 PDF

    IPS-T

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK112-50GL Logic level TOPFET_ _ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a low side


    OCR Scan     		BUK112-50GL BUK112-50GL IPS-T PDF

    transistor G28

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a


    OCR Scan     		BUK109-50GL transistor G28 PDF

    BUK112-50GL

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors PowerMOS transistor BUK112-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a low side


    OCR Scan     		BUK112-50GL BUK112-50GL OT263 T0220 PDF

    TOPFET

    Abstract: BUK112-50GL
    Text: Product specification Philips Semiconductors PowerMOS transistor BUK112-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a low side


    OCR Scan     		BUK112-50GL OT263 T0220 TOPFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET_ _ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for


    OCR Scan     		BUK107-50GL up7-50GL BUK107-50GL 1E-02 PDF

    k1085

    Abstract: 10850G k108
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a


    OCR Scan     		BUK108-50GL BUK108-50GL isl25 k1085 10850G k108 PDF