mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
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IRFM054
Abstract: No abstract text available
Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90709B
O-254AA)
IRFM054
O-254AA.
MIL-PRF-19500
IRFM054
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Untitled
Abstract: No abstract text available
Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.027 Ω IRFM054 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90709B
O-254AA)
IRFM054
O-254AA.
MIL-PRF-19500
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CMF20120D
Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
JEDEC24
mosfet 1200V
RB160M
6N137
IXDI414
RB160M-60
DMOS SiC
electronic transformer halogen 12v
MOSFET 800V 10A
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25N80C
Abstract: No abstract text available
Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions
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25N80C
ISOPLUS220
E72873
25N80C
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Fuji Power MOSFET Target Specification 2SK3523-01R 1.Scope This specifies Fuji Power MOSFET 2SK3523-01R 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-3PF 5.Absolute Maximum Ratings at Tc=25°° C unless otherwise specified
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2SK3523-01R
MT5F11620
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Untitled
Abstract: No abstract text available
Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance
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CPM2-1200-0025B
CPM2-1200-0025B
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AAT4282A
Abstract: AAT4282A-1 AAT4282A-2 AAT4282AIPS-3-T1
Text: AAT4282A Dual Slew Rate Controlled Load Switch General Description Features The AAT4282A SmartSwitch is a member of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. The AAT4282A is a dual P-channel MOSFET power switch designed
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AAT4282A
AAT4282A
AAT4282A-1
AAT4282A-2
AAT4282AIPS-3-T1
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IRFM054
Abstract: SHD218501 SHD218501A SHD218501B
Text: SHD218501 SHD218501A SHD218501B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 303, REV. B Formerly Part Number SHD2181/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 60 Volt, 0.027 Ohm, 45A MOSFET • Isolated Hermetic Metal Package • Fast Switching
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SHD218501
SHD218501A
SHD218501B
SHD2181/A/B
IRFM054
SHD218501
SHD218501A
SHD218501B
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Untitled
Abstract: No abstract text available
Text: AON6290 100V N-Channel MOSFET General Description Product Summary The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an
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AON6290
AON6290
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AN1001
Abstract: IRF1010 IRFB61N15D
Text: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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IRFB61N15D
AN1001)
O-220AB
AN1001
IRF1010
IRFB61N15D
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IRFB61N15D
Abstract: AN1001 IRF1010
Text: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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IRFB61N15D
AN1001)
O-220AB
IRFB61N15D
AN1001
IRF1010
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Untitled
Abstract: No abstract text available
Text: AON6290 100V N-Channel MOSFET General Description Product Summary VDS The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an
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AON6290
AON6290
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MOSFET 1 KW
Abstract: No abstract text available
Text: SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65mΩ Features Description • RDS on = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCH47N60NF
FCH47N60NF
121nC)
MOSFET 1 KW
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Untitled
Abstract: No abstract text available
Text: AON6290 100V N-Channel MOSFET General Description Product Summary VDS The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an
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AON6290
AON6290
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POWER MOSFET 4600
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD208603 TECHNICAL DATA DATA SHEET 278, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 200 VOLT, 0.050 OHM MOSFET IN A HERMETIC TO-254Z PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE
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SHD208603
O-254Z
250mA
SHD208603
POWER MOSFET 4600
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DIODE s3l
Abstract: POWER MOSFET 4600 DIODE FAST S2L diode S3L 49 diode S3L 13 diode S3L 54 DIODE s2l 54 s3l 02 diode diode S3L 39 MOSFET 4600
Text: Preliminary Data Sheet ú0560 N-Channel Power MOSFET Array Description Features The ú0560 contains six N-channel power MOS FET with VDSS = 500 V in half-bridge configuration. These enhancement-mode Power MOSFET array utilizes a DMOS structure and alpha’s dielectric
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0560DSHa
DIODE s3l
POWER MOSFET 4600
DIODE FAST S2L
diode S3L 49
diode S3L 13
diode S3L 54
DIODE s2l 54
s3l 02 diode
diode S3L 39
MOSFET 4600
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD208603 TECHNICAL DATA DATA SHEET 278, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 200 VOLT, 0.050 OHM MOSFET IN A HERMETIC TO-254Z PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE
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O-254Z
250mA
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4600 dual mosfet
Abstract: FCH47N60NF
Text: SupreMOS FCH47N60NF TM tm N-Channel MOSFET, FRFET 600V, 47A, 65mΩ Features Description • RDS on = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCH47N60NF
121nC)
4600 dual mosfet
FCH47N60NF
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IRFM054
Abstract: SHD2181 SHD2181A SHD2181B
Text: SENSITRON SEMICONDUCTOR SHD2181 SHD2181A SHD2181B TECHNICAL DATA DATA SHEET 303, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.027 Ohm, 45A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM054 Series
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SHD2181
SHD2181A
SHD2181B
IRFM054
SHD2181
SHD2181A
SHD2181B
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AAT4252A
Abstract: AAT4252A-3 AAT4252AITP-3-T1
Text: AAT4252A Dual Slew Rate Controlled Load Switch General Description Features The AAT4252A SmartSwitch is a dual P-channel MOSFET power switch designed for high-side loadswitching applications. Each MOSFET has a typical RDS ON of 105mΩ, allowing increased load switch
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AAT4252A
AAT4252A
500ns
AAT4252A-3
AAT4252AITP-3-T1
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shd2181
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD2181 SHD2181A SHD2181B TECHNICAL DATA DATA SHEET 303, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.027 Ohm, 45A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM054 Series
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SHD2181
SHD2181A
SHD2181B
IRFM054
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AAT4250
Abstract: AAT4280 AAT4285 GRM21BR71C105KA01 SC70JW-8
Text: AAT4285 12V Slew Rate Controlled Load Switch General Description Features The AAT4285 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The MOSFET operates from a 3.0V to 13.2V input range making it ideal for applications in
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AAT4285
AAT4285
AAT4250
AAT4280
GRM21BR71C105KA01
SC70JW-8
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AN1001
Abstract: No abstract text available
Text: PD- 95621 SMPS MOSFET IRFB61N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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IRFB61N15DPbF
AN1001)
O-220AB
AN1001
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