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    MOSFET 4232 Search Results

    MOSFET 4232 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4232 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: AP4232GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement RDS ON D2 D1 D1 Dual N MOSFET Package 30V 22m ID 7.8A G2 S2 RoHS Compliant SO-8 S1 G1 Description


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    AP4232GM-HF 4232GM PDF

    AP4232AGM

    Abstract: 4232AGM
    Text: AP4232AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 23mΩ ID 7.8A G2 S2 SO-8 S1 G1 Description


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    AP4232AGM 4232AGM AP4232AGM 4232AGM PDF

    4232gm

    Abstract: ap4232gm-hf 20V n-Channel Power MOSFET
    Text: AP4232GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 22mΩ ID 7.8A G2 S2 ▼ RoHS Compliant SO-8


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    AP4232GM-HF 4232GM 4232gm ap4232gm-hf 20V n-Channel Power MOSFET PDF

    IRF730

    Abstract: TA17414 TB334
    Text: IRF730 Data Sheet July 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


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    IRF730 TA17414. IRF730 TA17414 TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP4232AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement RDS ON D2 D1 D1 Dual N MOSFET Package 30V 23m ID 7.8A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the


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    AP4232AGM 4232AGM PDF

    4232gm

    Abstract: No abstract text available
    Text: AP4232GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement RDS ON D2 D1 D1 Dual N MOSFET Package 30V 22m ID 7.8A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the


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    AP4232GM 4232GM 4232gm PDF

    4232gm

    Abstract: AP4232GM DSA002950
    Text: AP4232GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 22mΩ ID 7.8A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the


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    AP4232GM 4232GM 4232gm AP4232GM DSA002950 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP4232GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 22mΩ ID SO-8 S1 G1 7.8A G2 S2 Description Advanced Power MOSFETs from APEC provide the


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    AP4232GM 4232GM PDF

    2SJ256

    Abstract: EN4232
    Text: Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ256]


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    EN4232 2SJ256 2SJ256] O-220ML 2SJ256 EN4232 PDF

    EN4232

    Abstract: 2SJ256
    Text: Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ256]


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    EN4232 2SJ256 2SJ256] O-220ML EN4232 2SJ256 PDF

    mosfet 4232

    Abstract: 12v dc to 115v aC CIRCUIT DIAGRAM
    Text: LTC4232 5A Integrated Hot Swap Controller Features Description Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs n Overtemperature Protection


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    LTC4232 16-Lead 4232fa mosfet 4232 12v dc to 115v aC CIRCUIT DIAGRAM PDF

    circuit diagram of delay timer on delay off

    Abstract: No abstract text available
    Text: LTC4232 5A Integrated Hot Swap Controller Features Description Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs n Overtemperature Protection


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    LTC4232 16-Lead 4232fa circuit diagram of delay timer on delay off PDF

    TC4422

    Abstract: TC4421CPA TC4421 TC4421CAT TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422EPA TC4422MJA
    Text: 1 TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES • ■ ■ ■ ■ ■ Tough CMOS Construction High Peak Output Current . 9A High Continuous Output Current . 2A Max Fast Rise and Fall Times: — 30 nsec with 4,700 pF Load


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    TC4421 TC4422 30nsec O-220 TC4422 TC4421CPA TC4421 TC4421CAT TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422EPA TC4422MJA PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC4232-1 5A Integrated Hot Swap Controller FEATURES DESCRIPTION Reduced 16ms Turn-On Delay n Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs


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    LTC4232-1 16-Lead SSOP-20 LTC4227 LTC4228 42321f com/LTC4232-1 PDF

    PE4232

    Abstract: PE4232-EK
    Text: PRODUCT SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • Integrated 0.25 watt terminations • CTB performance of 100dBc • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at


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    PE4232 75-ohm 100dBc PE4232 PE4232-EK PDF

    PE4232

    Abstract: PE4232-EK mosfet 4232
    Text: PRELIMINARY SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at 5 MHz, 0.75 dB at 1 GHz • High 1 dB compression: +30 dBm


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    PE4232 75-ohm PE4232 PE4232-EK mosfet 4232 PDF

    BNC T connectors INSERTION LOSS

    Abstract: PE4232 PE4232-EK mosfet 4232
    Text: PRODUCT SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • Integrated 75-ohm 0.25 watt terminations • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at 5 MHz, 0.75 dB at 1 GHz


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    PE4232 75-ohm 75-ohm PE4232 BNC T connectors INSERTION LOSS PE4232-EK mosfet 4232 PDF

    irf730

    Abstract: No abstract text available
    Text: IRF730 Semiconductor D ata S h eet Ju ly 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified


    OCR Scan
    IRF730 irf730 PDF

    transistor c 4236

    Abstract: S3P02 MMSF3P02Z
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M M SF3P02Z Medium Power Surface Mount Products TMOS Single P-Channel w ith M onolithic Zener ESD Protected G ate M otorola Preferred Device SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.060 OHM


    OCR Scan
    SF3P02Z MMSF3P02Z transistor c 4236 S3P02 PDF

    tc4422 ic

    Abstract: tc4422ca
    Text: ~ Semiconductor, Inc. TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially Immune to any form of upset except direct overvoltage or over-dissipation — they can­


    OCR Scan
    TC4421 TC4422 30nsec TC4421/4422 rating100 nns18V tc4422 ic tc4422ca PDF

    Untitled

    Abstract: No abstract text available
    Text: ” Semiconductor, Inc. TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation — they can­


    OCR Scan
    TC4421 TC4422 TC4421/4422 00CHb54 00CHb5S PDF

    cn/A/U 237 BG

    Abstract: LTC1436 LTC1436CGN LTC1436CGN-PLL LTC1436IGN LTC1436IGN-PLL LTC1436-PLL LTC1437 LTC143XC LTC143XI
    Text: u r m TECHNOLOGY LTC1436/LTC1436-PLL/LTC1437 High Efficiency Low Noise Synchronous Step-Down Switching Regulators F€fflUR€S D C S C M C T IO n • Maintains Constant Frequency at Low Output Currents ■ Dual l\l-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency PLL Lockable


    OCR Scan
    24-Lead 28-Lead LTC1430 LTC1435 16-Pin LTC1438/LTC1439 LT1510 LTC1538-AUX LTC1539 cn/A/U 237 BG LTC1436 LTC1436CGN LTC1436CGN-PLL LTC1436IGN LTC1436IGN-PLL LTC1436-PLL LTC1437 LTC143XC LTC143XI PDF

    rs 24v

    Abstract: transistor Cd 18 p
    Text: U f l f i A B . TECHNO LO G Y LTC1436/LTC1436-PLL/LTC1437 High Efficiency Low Noise Synchronous Step-Down Sw itching Regulators F€OTUR€S D C S C R IP T IO n • Maintains Constant Frequency at Low Output Currents ■ Dual l\l-Channel MOSFET Synchronous Drive


    OCR Scan
    LTC1436/ LTC1436-P LTC143 LTC1430 LTC1435 16-Pin LTC1438/LTC1439 LT1510 LTC1538-AUX LTC1539 rs 24v transistor Cd 18 p PDF

    4311 mosfet transistor

    Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
    Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.


    OCR Scan
    2SC3164 VR61F1 MA1000 MA2000 4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072 PDF