Untitled
Abstract: No abstract text available
Text: AP4232GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement RDS ON D2 D1 D1 Dual N MOSFET Package 30V 22m ID 7.8A G2 S2 RoHS Compliant SO-8 S1 G1 Description
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AP4232GM-HF
4232GM
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AP4232AGM
Abstract: 4232AGM
Text: AP4232AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 23mΩ ID 7.8A G2 S2 SO-8 S1 G1 Description
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AP4232AGM
4232AGM
AP4232AGM
4232AGM
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4232gm
Abstract: ap4232gm-hf 20V n-Channel Power MOSFET
Text: AP4232GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 22mΩ ID 7.8A G2 S2 ▼ RoHS Compliant SO-8
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AP4232GM-HF
4232GM
4232gm
ap4232gm-hf
20V n-Channel Power MOSFET
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IRF730
Abstract: TA17414 TB334
Text: IRF730 Data Sheet July 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of
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IRF730
TA17414.
IRF730
TA17414
TB334
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Untitled
Abstract: No abstract text available
Text: AP4232AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement RDS ON D2 D1 D1 Dual N MOSFET Package 30V 23m ID 7.8A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the
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AP4232AGM
4232AGM
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4232gm
Abstract: No abstract text available
Text: AP4232GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement RDS ON D2 D1 D1 Dual N MOSFET Package 30V 22m ID 7.8A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the
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AP4232GM
4232GM
4232gm
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4232gm
Abstract: AP4232GM DSA002950
Text: AP4232GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 22mΩ ID 7.8A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the
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AP4232GM
4232GM
4232gm
AP4232GM
DSA002950
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Untitled
Abstract: No abstract text available
Text: AP4232GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 22mΩ ID SO-8 S1 G1 7.8A G2 S2 Description Advanced Power MOSFETs from APEC provide the
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AP4232GM
4232GM
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2SJ256
Abstract: EN4232
Text: Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ256]
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EN4232
2SJ256
2SJ256]
O-220ML
2SJ256
EN4232
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EN4232
Abstract: 2SJ256
Text: Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ256]
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EN4232
2SJ256
2SJ256]
O-220ML
EN4232
2SJ256
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mosfet 4232
Abstract: 12v dc to 115v aC CIRCUIT DIAGRAM
Text: LTC4232 5A Integrated Hot Swap Controller Features Description Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs n Overtemperature Protection
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LTC4232
16-Lead
4232fa
mosfet 4232
12v dc to 115v aC CIRCUIT DIAGRAM
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circuit diagram of delay timer on delay off
Abstract: No abstract text available
Text: LTC4232 5A Integrated Hot Swap Controller Features Description Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs n Overtemperature Protection
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LTC4232
16-Lead
4232fa
circuit diagram of delay timer on delay off
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TC4422
Abstract: TC4421CPA TC4421 TC4421CAT TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422EPA TC4422MJA
Text: 1 TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES • ■ ■ ■ ■ ■ Tough CMOS Construction High Peak Output Current . 9A High Continuous Output Current . 2A Max Fast Rise and Fall Times: — 30 nsec with 4,700 pF Load
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TC4421
TC4422
30nsec
O-220
TC4422
TC4421CPA
TC4421
TC4421CAT
TC4421EPA
TC4421MJA
TC4422CAT
TC4422CPA
TC4422EPA
TC4422MJA
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Untitled
Abstract: No abstract text available
Text: LTC4232-1 5A Integrated Hot Swap Controller FEATURES DESCRIPTION Reduced 16ms Turn-On Delay n Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs
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LTC4232-1
16-Lead
SSOP-20
LTC4227
LTC4228
42321f
com/LTC4232-1
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PE4232
Abstract: PE4232-EK
Text: PRODUCT SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • Integrated 0.25 watt terminations • CTB performance of 100dBc • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at
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PE4232
75-ohm
100dBc
PE4232
PE4232-EK
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PE4232
Abstract: PE4232-EK mosfet 4232
Text: PRELIMINARY SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at 5 MHz, 0.75 dB at 1 GHz • High 1 dB compression: +30 dBm
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PE4232
75-ohm
PE4232
PE4232-EK
mosfet 4232
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BNC T connectors INSERTION LOSS
Abstract: PE4232 PE4232-EK mosfet 4232
Text: PRODUCT SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • Integrated 75-ohm 0.25 watt terminations • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at 5 MHz, 0.75 dB at 1 GHz
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PE4232
75-ohm
75-ohm
PE4232
BNC T connectors INSERTION LOSS
PE4232-EK
mosfet 4232
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irf730
Abstract: No abstract text available
Text: IRF730 Semiconductor D ata S h eet Ju ly 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified
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IRF730
irf730
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transistor c 4236
Abstract: S3P02 MMSF3P02Z
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M M SF3P02Z Medium Power Surface Mount Products TMOS Single P-Channel w ith M onolithic Zener ESD Protected G ate M otorola Preferred Device SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.060 OHM
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SF3P02Z
MMSF3P02Z
transistor c 4236
S3P02
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tc4422 ic
Abstract: tc4422ca
Text: ~ Semiconductor, Inc. TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially Immune to any form of upset except direct overvoltage or over-dissipation — they can
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TC4421
TC4422
30nsec
TC4421/4422
rating100
nns18V
tc4422 ic
tc4422ca
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Untitled
Abstract: No abstract text available
Text: ” Semiconductor, Inc. TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation — they can
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TC4421
TC4422
TC4421/4422
00CHb54
00CHb5S
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cn/A/U 237 BG
Abstract: LTC1436 LTC1436CGN LTC1436CGN-PLL LTC1436IGN LTC1436IGN-PLL LTC1436-PLL LTC1437 LTC143XC LTC143XI
Text: u r m TECHNOLOGY LTC1436/LTC1436-PLL/LTC1437 High Efficiency Low Noise Synchronous Step-Down Switching Regulators F€fflUR€S D C S C M C T IO n • Maintains Constant Frequency at Low Output Currents ■ Dual l\l-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency PLL Lockable
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24-Lead
28-Lead
LTC1430
LTC1435
16-Pin
LTC1438/LTC1439
LT1510
LTC1538-AUX
LTC1539
cn/A/U 237 BG
LTC1436
LTC1436CGN
LTC1436CGN-PLL
LTC1436IGN
LTC1436IGN-PLL
LTC1436-PLL
LTC1437
LTC143XC
LTC143XI
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rs 24v
Abstract: transistor Cd 18 p
Text: U f l f i A B . TECHNO LO G Y LTC1436/LTC1436-PLL/LTC1437 High Efficiency Low Noise Synchronous Step-Down Sw itching Regulators F€OTUR€S D C S C R IP T IO n • Maintains Constant Frequency at Low Output Currents ■ Dual l\l-Channel MOSFET Synchronous Drive
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LTC1436/
LTC1436-P
LTC143
LTC1430
LTC1435
16-Pin
LTC1438/LTC1439
LT1510
LTC1538-AUX
LTC1539
rs 24v
transistor Cd 18 p
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4311 mosfet transistor
Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.
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2SC3164
VR61F1
MA1000
MA2000
4311 mosfet transistor
2SK2068
2sc 1027 transistor
4-071 transistor
2SK2067
S2VC
4102 transistor
s2ld
s4vb bridge rectifier
4072
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