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    MOSFET 416 Search Results

    MOSFET 416 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 416 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTW7N80E
    Text: MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTW7N80E O-247 r14525 MTW7N80E/D AN569 MTW7N80E

    AN569

    Abstract: MTW7N80E
    Text: MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTW7N80E r14525 MTW7N80E/D AN569 MTW7N80E

    Untitled

    Abstract: No abstract text available
    Text: 0.9V Drive Nch MOSFET RYE002N05 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ Application Switching


    Original     		PDF RYE002N05 SC-75A) OT-416> R1120A

    RUE002N05

    Abstract: SC-75A
    Text: 1.2V Drive Nch MOSFET RUE002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application


    Original     		PDF RUE002N05 SC-75A) OT-416> R1010A RUE002N05 SC-75A

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch MOSFET RUE002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application


    Original     		PDF RUE002N05 SC-75A) OT-416> R1010A

    RYE002N05

    Abstract: SC-75A
    Text: 0.9V Drive Nch MOSFET RYE002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ  Application


    Original     		PDF RYE002N05 SC-75A) OT-416> R1010A RYE002N05 SC-75A

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch MOSFET RUE002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application


    Original     		PDF RUE002N05 SC-75A) OT-416> R1010A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N65 Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N65 20N65 QW-R502-731

    Untitled

    Abstract: No abstract text available
    Text: 0.9V Drive Nch MOSFET RYE002N05 z Structure Silicon N-channel MOSFET z Dimensions Unit : mm EMT3 (SC-75A) <SOT-416> zFeatures 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ z Application Switching


    Original     		PDF RYE002N05 SC-75A) OT-416> RYE002N05 R1120A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N60 20N60 QW-R502-587

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 22N60 22N60 22N60L-T47-T 22N60G-T47-T 22N60L-T3P-T 22N60G-T3P-T 22N60L-at QW-R502-216

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 22N60 22N60 22N60L-T47-T 22N60G-T47-T 22N60L-T3P-T 22Nat QW-R502-216

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N10 Power MOSFET 80A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT80N10 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate


    Original     		PDF UTT80N10 UTT80N10 UTT80N10L-TA3-T UTT80N10G-TA3-T QW-R502-712

    Untitled

    Abstract: No abstract text available
    Text: N-Channel SuperFET II MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance


    Original     		PDF

    IRFM360

    Abstract: SHD225615
    Text: SENSITRON SEMICONDUCTOR SHD225615 TECHNICAL DATA DATA SHEET 4167, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, .20 Ohm, 23A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Similar to IRFM360 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD225615 IRFM360 250mA IRFM360 SHD225615

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD225615 TECHNICAL DATA DATA SHEET 4167, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, .20 Ohm, 23A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Similar to IRFM360 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD225615 IRFM360 O-254 O-254

    PHILIPS MOSFET MARKING

    Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107

    us 945 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9030M/D MRF9030MR1 us 945 mosfet

    mosfet K 2865

    Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING

    Infineon technology roadmap for mosfet

    Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
    Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial


    Original     		PDF KMZ60 KMA210 KMA215 Infineon technology roadmap for mosfet LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA

    MRF5S9070NR

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1 MRF5S9070NR

    TRANSISTOR ww1

    Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
    Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY


    Original     		PDF BLF548 AN98021 BLF548 SCA57 TRANSISTOR ww1 mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65XP O-236AB)

    4134 mosfet

    Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET
    Text: Jn tefsil N-Channel Standard Gate Power MOSFETs 4 Power MOSFET Products PAGE N-Channel Test Circuits and W aveform s. 4-3 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET.


    OCR Scan     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRFZ44N HUF75307P3, HUF75307D3, HUF75307D3S HUF75309P3, HUF75309D3, 4134 mosfet Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET