transistor 341 20P
Abstract: marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1206
OT363
SCA75
20p/01/pp21
transistor 341 20P
marking sot363 20p
UHF Dual Gate
uhf vhf amplifier
dual-gate
dual gate fet
FET MARKING CODE
FET marking codes
FET Spec sheet
marking 865 amplifier
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00941
Abstract: BF1205
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1205
OT363
SCA75
R77/01/pp24
00941
BF1205
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BF1203
Abstract: FET MARKING CODE 8203 dual mosfet
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203
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MBD128
BF1203
OT363
613512/03/pp20
BF1203
FET MARKING CODE
8203 dual mosfet
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TRANSISTOR ww1
Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY
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BLF548
AN98021
BLF548
SCA57
TRANSISTOR ww1
mosfet handbook
trimmer 2-18 pf
ww1 45 transistor
trafo toroidal
AN98021
KDI-PPT820-75-3
4814 mosfet chip
philips catalog potentiometer 2322 350
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PDF
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9033 transistor
Abstract: BF1203
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203
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MBD128
BF1203
OT363
613512/02/pp20
9033 transistor
BF1203
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PDF
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BF1203
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1203
125004/00/01/pp8
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philips power mosfet
Abstract: km 1667 BF1204
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2000 Nov 13 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1204
613512/01/pp12
philips power mosfet
km 1667
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PDF
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MARKING 5F SOT363
Abstract: BF1204 FET MARKING CODE km 1667
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204
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MBD128
BF1204
OT363
613512/02/pp12
MARKING 5F SOT363
BF1204
FET MARKING CODE
km 1667
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BB405
Abstract: BF998WR 4814 mosfet dual-gate MGC480
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR
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BF998WR
SCA55
117067/00/02/pp12
BB405
BF998WR
4814 mosfet
dual-gate
MGC480
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PDF
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marking code mf
Abstract: dual-gate FET MARKING CODE BF1100WR mosfet handbook fw 2602
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING • Specially designed for use at 9 to 12 V supply voltage
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BF1100WR
marking code mf
dual-gate
FET MARKING CODE
BF1100WR
mosfet handbook
fw 2602
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PMEG2020EA
Abstract: smps repair circuit TEA1620P 40V NPN embedded package TEA1622 pecl clock so8 30v 3a schottky barrier type rectifiers TEA1623P smps repair smd transistor bq
Text: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 2 M AY 2 0 0 4 ■ In this issue: Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. P 1 PCK12429 25 - 400 MHz differential PECL clock generator
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PCK12429
PBSS5540X
PCK111/PCK210/PCKEL14/PCKEP14
TDA9965A
PMEG2020EA
smps repair circuit
TEA1620P
40V NPN embedded package
TEA1622
pecl clock so8
30v 3a schottky barrier type rectifiers
TEA1623P
smps repair
smd transistor bq
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Dual-Gate Mosfet
Abstract: MRC280 FET MARKING CODE BF908WR PHILIPS MOSFET MARKING depletion p mosfet code md dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR
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BF908WR
Dual-Gate Mosfet
MRC280
FET MARKING CODE
BF908WR
PHILIPS MOSFET MARKING
depletion p mosfet
code md
dual-gate
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mosfet K 2865
Abstract: 4814 mosfet BF909WR dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR
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BF909WR
SCA55
117067/00/02/pp12
mosfet K 2865
4814 mosfet
BF909WR
dual-gate
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz
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BF1100WR
OT343R
OT343R.
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.
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BF998WR
OT343R
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Transistor BF988
Abstract: BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate
Text: • 711082b QQb7SbM 2Ö4 IPHIN Philips Semiconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfs • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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711082b
BF988
Transistor BF988
BF988
bf988 philips semiconductor
PHILIPS MOSFET MARKING
philips bf988
dual gate fet
MC3344
mosfet 440 mhz
dual gate mosfet in vhf amplifier
dual gate
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PHILIPS MOSFET MARKING
Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
Text: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio |YfS I/C* • Low noise gain controlled amplifier to 1 GHz.
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BF998
OT143
PHILIPS MOSFET MARKING
BF998
TRANSISTOR mosfet BF998
dual gate mosfet
n-channel dual gate
mcb351
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR PINNING FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz
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BF904WR
OT343R
OT343R.
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PDF
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high
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bbS3T31
QQ23b34
BF998
OT143
LtiS3T31
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PDF
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BF909AWR
Abstract: 302B ha3020 dual-gate k 3531 transistor transistor 1G1
Text: Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909AWR FEATURES PINNING • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz
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BF909AWR
OT343R
OT343R
302B
ha3020
dual-gate
k 3531 transistor
transistor 1G1
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PDF
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bf998 Mop
Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Text: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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75bEb
6F998
OT143
bf998 Mop
BF998
marking t54
PHILIPS MOSFET MARKING
PHILIPS MOSFET
mcb349
dual gate fet
N-channel dual-gate MOS-FET for tv
DUAL GATE MOS-FET
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PDF
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5BS transistor
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.
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BF908WR
OT343R
0CH2274
RC281
DCH2275
OT343R.
5BS transistor
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PDF
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BF908WR
Abstract: cifa dual-gate
Text: Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET FEATURES BF908WR PINNING • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.
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OCR Scan
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OT343R
BF908WR
MRC276
OT343R.
BF908WR
cifa
dual-gate
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BF904WR
Abstract: Dual-Gate Mosfet 731 MOSFET transistor t220 dual-gate mosfet 352 TRANSISTOR MOSFET K 1249 MLD150
Text: Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR PINNING FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz
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BF904WR
OT343R
OT343R.
711002t,
BF904WR
Dual-Gate Mosfet
731 MOSFET
transistor t220
dual-gate
mosfet 352
TRANSISTOR MOSFET K 1249
MLD150
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