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    MOSFET 3N 200 Search Results

    MOSFET 3N 200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 3N 200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D223

    Abstract: RIN200 DCM103 625E3 MAX9000 MAX9002 MAX9003 MAX9005 MAX951 dp106
    Text: * MAX9000 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator + Reference * Single +2.5V to +5.5V Supply Operation * Available in 8-Pin SO/uMAX MAX9000 * 8-Pin SO/uMAX (MAX9002) * 8-Pin SO/uMAX (MAX9003) * 8-Pin SO/uMAX (MAX9005)


    Original     		PDF MAX9000 MAX9000) MAX9002) MAX9003) MAX9005) MAX9000 MAX9002 MAX9003 MAX9005 MAX9001/MAX9004) D223 RIN200 DCM103 625E3 MAX9002 MAX9003 MAX9005 MAX951 dp106

    F226

    Abstract: MAX951 MAX952 G-1-12
    Text: * MAX952 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator + Reference * 7uA Typical Supply Current * Comparator and Op Amp Input Range Includes Ground * Internal 1.2V Reference * Outputs Swing Rail to Rail * Internal Comparator Hysteresis


    Original     		PDF MAX952 MAX952 RH101 RH102 DP101 DP102 VP100 VP102 F226 MAX951 G-1-12

    ISL62883BHRTZ

    Abstract: ISL62883HRTZ SM1206 DATASHEET thermistor ntc 60 0250 ISL62883 ISL62883B ISL62883IRTZ TB347 I 62883 of thermistor 47K ohms ntc
    Text: ISL62883, ISL62883B Data Sheet August 20, 2009 Multiphase PWM Regulator for IMVP-6.5 Mobile CPUs The ISL62883 is a multiphase PWM buck regulator for miroprocessor core power supply. The multiphase buck converter uses interleaved phase to reduce the total output


    Original     		PDF ISL62883, ISL62883B ISL62883 ISL62883 5m-1994. FN6891 ISL62883BHRTZ ISL62883HRTZ SM1206 DATASHEET thermistor ntc 60 0250 ISL62883B ISL62883IRTZ TB347 I 62883 of thermistor 47K ohms ntc

    ISL62883HRTZ-T

    Abstract: ISL62883 10kHz ESR 20ohm ISL62883HRTZ ISL62883B ISL62883BHRTZ ISL62883BHRTZ-T ISL62883IRTZ ISL62883IRTZ-T 32 pins tqfn 5x5 footprint
    Text: ISL62883, ISL62883B Data Sheet April 1, 2009 Multiphase PWM Regulator for IMVP-6.5 Mobile CPUs The ISL62883 is a multiphase PWM buck regulator for miroprocessor core power supply. The multiphase buck converter uses interleaved phase to reduce the total output


    Original     		PDF ISL62883, ISL62883B ISL62883 ISL62883 5m-1994. FN6891 ISL62883HRTZ-T 10kHz ESR 20ohm ISL62883HRTZ ISL62883B ISL62883BHRTZ ISL62883BHRTZ-T ISL62883IRTZ ISL62883IRTZ-T 32 pins tqfn 5x5 footprint

    MAX954

    Abstract: F226 DCM103
    Text: * MAX954 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator * 7uA Typical Supply Current * Comparator and Op Amp Input Range Includes Ground * Outputs Swing Rail to Rail * Internal Comparator Hysteresis * Op Amp Gain Stability 10V/V


    Original     		PDF MAX954 MAX954 RH101 RH102 DP101 DP102 VP100 F226 DCM103

    PS331

    Abstract: PS331S Data sheet of thermistor 10K ohms ntc Microcrystal MX1V-TL-32.768K 2N7002-SOT23 SOT23-GSD SOT23GSD cmr200tb MFR resistor MX1V-TL
    Text: PS3100 Multi-chemistry Smart Battery Manager Module Features • • • Can be programmed with application specific cell parameters for NiMH and Li Ion chemistries • Fully compliant with industry standard Smart Battery Data Specification V1.1a SMBus V1.1 with PEC / CRC-8


    Original     		PDF PS3100 14-bit PS331 PS331S Data sheet of thermistor 10K ohms ntc Microcrystal MX1V-TL-32.768K 2N7002-SOT23 SOT23-GSD SOT23GSD cmr200tb MFR resistor MX1V-TL

    Untitled

    Abstract: No abstract text available
    Text: PowerMOSFET OUTLI NE F21F60CPM Uni t mm Package FTO220A 3pi n ロット記号 （例） Date code 600V21A 4.5 10.０ 品名略号 Type No. 15.０ 管理番号 （例） Control No. ３.45 0000 21F60CPM 13.5 Feat ur e Hi ghVol t age LowRON Fas tSwi t chi ng


    Original     		PDF 21F60CPM

    11F60c3m

    Abstract: 11F60
    Text: PowerMOSFET OUTLI NE F11F60C3M Uni tmm Package FTO220A 600V11A ロット記号 （例） Date code 4.5 10 0000 15 管理番号 （例） Control No. 11F60C3M 品名略号 Type No. Feat ur e 13.5 LowRON Fas tSwi t chi ng I s ol at edPackage ①: G ②:D ③: S


    Original     		PDF 11F60C3M 11F60c3m 11F60

    Untitled

    Abstract: No abstract text available
    Text: STP3NB90 STP3NB90FP N - CHANNEL 900V - 4 £2 - 3.5 A - TO-220/TO-220FP _ PowerMESH MOSFET TARGET DATA TYPE V STP 3N B90 S TP 3N B90FP • . . . . dss 900 V 900 V Id R D S o n < 4.2 < 4.2 a a 3.5 A 3.5 A TYPICAL RDS(on) = 4 EXTREMELY HIGH dv/dt CAPABILITY


    OCR Scan     		PDF STP3NB90 STP3NB90FP O-220/TO-220FP B90FP STP3NB90/FP O-22QFP

    3ne06

    Abstract: No abstract text available
    Text: STN3NE06 N - CHANNEL 60V - 0.08Î2 - 3A - SOT-223 STripFET POWER MOSFET TYPE V dss R D S o n Id STN 3N E06 60 V < 0 .1 0 0 Q 3 A . . . . . TYPICAL Fbs(on) = 0.08 Ü EXCEPTIONALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED


    OCR Scan     		PDF STN3NE06 OT-223 3ne06

    3NB50

    Abstract: No abstract text available
    Text: SGS-THOMSON M TO »« STD3NB50 N - CHANNEL 500V - 2.5Q - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE STD 3N B50 • . . . . V dss RDS on Id 500 V < 2.8 Q 3 A TYPICAL RDS(on) = 2.5 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF STD3NB50 3NB50

    Untitled

    Abstract: No abstract text available
    Text: STN3NE06 N - CHANNEL 60V - 0.08CI - 3A - SOT-223 STripFET POWER MOSFET TYP E STN 3N E06 • . . . . V dss 60 V R d S oii Id < 0 .1 0 0 Q. 3 A TYPICAL RDS(on) = 0.08 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED


    OCR Scan     		PDF STN3NE06 OT-223 OT-223

    Untitled

    Abstract: No abstract text available
    Text: STN3NE06L N - CHANNEL 60V - 0.10 £2 - 3A - SOT-223 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE STN 3N E06L V dss R d S oii Id 60 V < 0 .1 2 0 a 3 A = • TYPICAL RDS(on) 0.10 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    OCR Scan     		PDF STN3NE06L OT-223 OT-223

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB3N120E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N120E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1200 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TB3N120E/D MTB3N120E In982. 418B-02

    BF817

    Abstract: 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 BF805 n channel depletion MOSFET dual gate mosfet in uhf amplifier
    Text: Metal Can FET 's Low Leakage/Noise Current Case Outlines <M i I ^ 1 2 3 5 6 7 Source Drain Gate Source Drain Gate 1 1 1 2 2 2 3 -1 8 _ 0-23 L -4 5 Type No. Case BF800 BF801 BF802 BF805 BF806 TO -72 T 0 -7 2 TO-72 TO -72 TO-72 IG S Pol. max. pA N N N N N


    OCR Scan     		PDF 1270J en-100kHz BF800 3x10-" BF801 T0-72 4x10-" BF802 BF805 6x10-" BF817 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 n channel depletion MOSFET dual gate mosfet in uhf amplifier

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET


    OCR Scan     		PDF MTD3N25E/D TD3N25E

    TP3N60

    Abstract: p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N60 M T P 3N 55 M T P 3N 60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TM O S POWER FETs 3 AMPERES rDS on = 2 5 OH M S 550 and 600 VOLTS These TM O S P ow er FETs are designed fo r high vo ltag e , high


    OCR Scan     		PDF MTM/MTP3N60, MTP3N55 TP3N60 p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60

    3N163-64

    Abstract: MOSFET 3N 200
    Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch _ ^ mm « /« Iä W I# . C Q IO Q IC M \J CORPORATION 3N163/3N164 ABSOLUTE MAXIMUM RATINGS N o te l (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance


    OCR Scan     		PDF 3N163/3N164 3N163 -10mA, 3N163 3N164 -10mA 200ns 10Mfl 3N163-64 MOSFET 3N 200

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20

    MFE823

    Abstract: 3N163 3N164 electrometer
    Text: 3 N 164 enhancem ent-type p-channel MOSFETs 3 N 163 £ _ aesignea ror • • s s iliconix Performance Curves MRA see sections • • Ultra-High Input Impedance b e n e f its * bugged MOS Gate Minimize s Handling Problems ±150 V Transient Capabil ity A m p lifie r s


    OCR Scan     		PDF 3N163 3N164 MFE823 3N163 3N164 electrometer

    Untitled

    Abstract: No abstract text available
    Text: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)


    OCR Scan     		PDF 3N163. 3N164 3N163 3N164 375mW 3N163) 3N164) 200ns 300ms.

    mtp3n45

    Abstract: VG-11T
    Text: M O TO ROLA • SEM ICONDUCTOR TECHNICAL DATA M T P 3N 45 M T P 3N 50 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode S ilic o n G ate T M O S TMOS POWER FETs 3 AMPERES rDS on = 3 OHMS 450 and 500 VOLTS These TM O S Pow er FETs are designed fo r m e d iu m voltage,


    OCR Scan     		PDF MTP3N45, mtp3n45 VG-11T

    3N165

    Abstract: 3N166
    Text: G E SOLI» STATE □1 D E|3 fl7 S D fll T - GDI I d 17 3N165, 3N166 3N165, 3N166 Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Impedance • High Gate Breakdown Drain-Source or Drain-Gate Voltage Note 2


    OCR Scan     		PDF 3N165, 3N166 307SDÃ 3N165 -500HA 3N170 300ms. 3N165 3N166

    3N165

    Abstract: 3N166 3N170
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier caloric C O RPO RATIO N v 3N1B5/3N166 A B S O L U T E M A X IM U M R A T IN G S N o te 1 ( T a = 2 5 °C unless otherwise specified) FE A TU R E S • Very H igh Im pe d a n c e


    OCR Scan     		PDF 3N165/3N166 3N165 3N166 -10mA, 100MHz -500hA -500hA 3N170 300ms. 3N165 3N166