Untitled
Abstract: No abstract text available
Text: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA20N50
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Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch + Pch MOSFET QS8M51 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8).
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QS8M51
QS8M51
R1120A
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Untitled
Abstract: No abstract text available
Text: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDA20N50
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Untitled
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch + Pch MOSFET QS8M51 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8).
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QS8M51
QS8M51
R1120A
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Untitled
Abstract: No abstract text available
Text: QS8M51 Data Sheet 4V Drive Nch + Pch MOSFET QS8M51 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8).
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QS8M51
QS8M51
R1120A
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f 948
Abstract: TOP 948 f948
Text: FC-36A 5.5 x 5 mm MOSFET BGA Tape and Reel Dimensions FC-36A MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: Antistatic Cover Tape FC-36A MOSFET BGA parts are shipped in tape. The carrier tape is made from a dissipative carbon filled
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FC-36A
F63TNR
330cm
f 948
TOP 948
f948
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Untitled
Abstract: No abstract text available
Text: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features Description • RDS on = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP20N50
FDPF20N50
FDPF20N50T
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AN2386
Abstract: Atlas silvaco 14047 silvaco
Text: AN2386 Application note How to achieve the threshold voltage thermal coefficient of the MOSFET acting on design parameters Introduction Today, the MOSFET devices are used mainly as switches in electronic circuits. In such operational conditions, the MOSFET device works in switch on and switch off modes.
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AN2386
AN2386
Atlas silvaco
14047
silvaco
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Text: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP20N50
FDPF20N50
FDPF20N50T
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N65Z-E Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N65Z-E
4N65Z-E
QW-R502-995.
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Text: FCH041N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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AT 30B
Abstract: FC-30B 942b F942B
Text: FC-30B 3.5 x 4 mm MOSFET BGA Tape and Reel Dimensions FC-30B MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: FC-30B MOSFET BGA parts are shipped in tape. The carrier tape if made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film
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FC-30B
F63TNR
330cm
AT 30B
942b
F942B
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FCH041N65F
Abstract: No abstract text available
Text: FCH041N65F N-Channel SuperFET II FRFET® MOSFET 650 V, 76 A, 41 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCH041N65F
FCH041N65F
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G3VM-355JR
Abstract: G3VM-355J relay omron 5 pin g3vm355jr MOSFET A5
Text: Omron A5 Catalogue 2006 295-430 14/10/05 10:09 am Page 428 MOSFET Relay – G3VM-355J/JR New MOSFET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package. General-purpose Series Added. • SPST-NO/SPST-NC models with an 8-pin SOP
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G3VM-355J/JR
G3VM-355JR
G3VM-355J
G3VM-355JR
G3VM-355J
relay omron 5 pin
g3vm355jr
MOSFET A5
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uc3854 3kw pfc
Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
Text: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager
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APT9901
B-1330
uc3854 3kw pfc
uc3854 Application Note
Power Factor Correction With the UC3854
2kw pfc
uc3854 3kw
PFC 3kw
APT9901
UNITRODE Claudio de Sa e Silva
3.5kw pfc
3kw uc3854
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d marking code dpak transistor
Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD3580 FDD6680 FDU3580
Text: FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDD3580/FDU3580
O-25opment.
d marking code dpak transistor
d-pak DEVICE MARKING CODE table
CBVK741B019
F63TNR
FDD3580
FDD6680
FDU3580
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Abstract: No abstract text available
Text: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
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Text: FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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Text: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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fdfs6n303
Abstract: 6n303 L86Z SOIC-16 F011 F63TNR F852
Text: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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fdfs6n303
6n303
L86Z
SOIC-16
F011
F63TNR
F852
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N2357D
Abstract: N2357
Text: ISL9N2357D3ST Data Sheet 30V, 0.007 Ohm, 35A, N-Channel DenseTrench Power MOSFET March 2001 File Number 4929.1 DenseTrench™ [ /Title DenseTrench from Intersil is a new advanced MOSFET technology that achieves the lowest possible on-resistance Features
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ISL9N2357D3ST
N2357
5600pF
N2357D
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FCH041N60E
Abstract: No abstract text available
Text: SuperFET II FCH041N60E N-Channel MOSFET Features Description ® The SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower
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FCH041N60E
FCH041N60E
285nC)
735pF)
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CBVK741B019
Abstract: F63TNR FDD2512 FDD6680 marking 300 to252
Text: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature
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