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    MOSFET 337 Search Results

    MOSFET 337 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 337 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3nf CAPACITOR

    Abstract: 839B IXS839S1
    Text: IXYS IXS839 / IXS839A / IXS839B Synchronous Buck MOSFET Driver Features: General Description • Logic Level Gate Drive Compatible The IXS839/IXS839A/IXS839B are 2A Source / 4A Sink Synchronous Buck MOSFET Drivers. These Synchronous Buck MOSFET Drivers are specifically


    Original     		PDF IXS839 IXS839A IXS839B IXS839/IXS839A/IXS839B 3000pF IXS839/839B: IXS839A/B: 3nf CAPACITOR 839B IXS839S1

    SHD239602

    Abstract: mosfet 337
    Text: SENSITRON SEMICONDUCTOR SHD239602 TECHNICAL DATA DATA SHEET 337, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.020 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD239602 250mA SHD239602 mosfet 337

    mosfet 337

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239602 TECHNICAL DATA DATA SHEET 337, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.020 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD239602 250mA SO631) SHD239602 mosfet 337

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT40P04 Power MOSFET 40V, 50A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high


    Original     		PDF UTT40P04 UTT40P04 UTT40P04L-TA3-T UTT40P04G-TA3-T QW-R502-616

    Untitled

    Abstract: No abstract text available
    Text: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25


    Original     		PDF 40D/06 B25/50

    transistor P18

    Abstract: No abstract text available
    Text: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET


    Original     		PDF

    NTC K15

    Abstract: 125OC PSMG150
    Text: ECO-PACTM 2 Power MOSFET in ECO-PAC 2 PSMG 150/01* Single MOSFET Die X18 I K10/11 A1 L N 8/9 Preliminary Data Sheet K13 MOSFET VDSS ID25 RDS on trr *NTC optional K15 Symbol Test Conditions V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF K10/11 125OC NTC K15 125OC PSMG150

    uc3854 3kw pfc

    Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
    Text: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager


    Original     		PDF APT9901 B-1330 uc3854 3kw pfc uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518T1 AN215A,

    AN569

    Abstract: MTB36N06V MTB36N06VT4
    Text: MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTB36N06V r14525 MTB36N06V/D AN569 MTB36N06V MTB36N06VT4

    HS-4424

    Abstract: HS4424B 5962F9951102VXC 5962F9951101VXC HS-4423 IS1715 HS-4423RH hs4423brh HS- RH HS4423
    Text: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current


    Original     		PDF HS-4423RH, HS-4423BRH HS-4423RH HS-4423BRH HS-1825ARH FS055, HS-4424BRH HS-4424RH IS-1715ARH HS-4424 HS4424B 5962F9951102VXC 5962F9951101VXC HS-4423 IS1715 hs4423brh HS- RH HS4423

    FDD4141

    Abstract: No abstract text available
    Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4141 -PA52 FDD4141

    5962F9951102VXC

    Abstract: HS-4423BRH HS-4423RH 5962F9951101VXC 5962F9951101QXC HS9-4423RH-Q HS-1825ARH HS9-4423BRH-Q 5962F9951102QXC
    Text: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current


    Original     		PDF HS-4423RH, HS-4423BRH HS-4423RH HS-1825ARH FS055, 5962F9951102VXC HS-4423BRH 5962F9951101VXC 5962F9951101QXC HS9-4423RH-Q HS9-4423BRH-Q 5962F9951102QXC

    FDD4141-F085

    Abstract: FDD4141 25c337 fdd4141_f085 Fairchild FDD4141
    Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4141 FDD4141-F085 25c337 fdd4141_f085 Fairchild FDD4141

    FDD4141

    Abstract: Fairchild FDD4141
    Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4141 -PA52 FDD4141 Fairchild FDD4141

    Untitled

    Abstract: No abstract text available
    Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4141

    VS-40MT060WFHT

    Abstract: 01100-T
    Text: VS-40MT060WFHT www.vishay.com Vishay Semiconductors Full Bridge IGBT and MOSFET MTP Power Module FEATURES • Generation 4 warp speed IGBT and power MOSFET technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses


    Original     		PDF VS-40MT060WFHT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-40MT060WFHT 01100-T

    Untitled

    Abstract: No abstract text available
    Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4141

    AAT4615

    Abstract: AAT4615ITP-T1
    Text: AAT4615 2.25A Current Limited Load Switch General Description Features The AAT4615 SmartSwitch is a member of AnalogicTech™'s Application Specific Power MOSFET™ ASPM™ product family. It is a Current Limited P-channel MOSFET power switch designed


    Original     		PDF AAT4615 AAT4615 AAT4615ITP-T1

    RMW150N03

    Abstract: No abstract text available
    Text: Data Sheet 4.5V Drive Nch MOSFET RMW150N03  Structure Silicon N-channel MOSFET  Dimensions Unit : mm (8) (6) (5) 5.0 6.0 Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low voltage drive(4.5V drive). (7) 0.5


    Original     		PDF RMW150N03 RMW150N03 Pw10s, R1120A

    AN1001

    Abstract: AN-994 IRFB59N10D IRFS59N10D IRFSL59N10D
    Text: PD - 93890 IRFB59N10D IRFS59N10D IRFSL59N10D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 0.025Ω 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		PDF IRFB59N10D IRFS59N10D IRFSL59N10D AN1001) O-220AB O-262 Dissipation52-7105 AN1001 AN-994 IRFB59N10D IRFS59N10D IRFSL59N10D

    Untitled

    Abstract: No abstract text available
    Text: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV170UN O-236AB)

    MTP36N06V

    Abstract: TO-220AB/5 AN569 MTP30N06V
    Text: MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP36N06V O-220 MTP36N06V/D MTP36N06V TO-220AB/5 AN569 MTP30N06V

    Untitled

    Abstract: No abstract text available
    Text: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current


    OCR Scan     		PDF HS-4423RH, HS-4423BRH HS-4423RH HS-1825ARH FS055, 1-800-4-HARRIS