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    MOSFET 300W Search Results

    MOSFET 300W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 300W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet 4702

    Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts


    Original     		IXZ210N50L IXZ2210N50L 175MHz IXZ210N50L 175MHz mosfet 4702 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942 PDF

    rf power mosfet

    Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
    Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings


    Original     		IXZ215N12L 175MHz rf power mosfet mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet PDF

    "RF MOSFET" 300W

    Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf
    Text: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating


    Original     		IXZ12210N50L 175MHz 175MHz IXZ1210N50L dsIXZ12210N50L "RF MOSFET" 300W transistor tl 187 "RF MOSFETs" RF POWER MOSFET 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf PDF

    mosfet 4702

    Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating


    Original     		IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L mosfet 4702 IXZ2210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364 PDF

    IXZ2210N50L

    Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating


    Original     		IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L IXZ2210N50L "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF PDF

    "RF MOSFET" 300W

    Abstract: IXZH16N60 1 RF s 640 a 931 IXZ316N60 MOSFET QG mosfet 300w rf power mosfet
    Text: IXZH16N60 Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Qg and Rg Low Capacitance Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for ClassSwitching C, D, & E Applications Symbol


    Original     		IXZH16N60 IXZ316N60 dsIXZH16N60 "RF MOSFET" 300W IXZH16N60 1 RF s 640 a 931 MOSFET QG mosfet 300w rf power mosfet PDF

    neosid* 10k

    Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		AN1229 SD2932 SD2932. SD2932 neosid* 10k neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz PDF

    inductor vk200

    Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		AN1229 SD2932 SD2932. SD2932 inductor vk200 RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier PDF

    JESD97

    Abstract: P120NF04 STP120NF04 p120nf
    Text: STP120NF04 N-channel 40V - 0.0047Ω - 120A TO-220 STripFET II MOSFET General features Type VDSS RDS on ID Pw STP120NF04 40V <0.0050Ω 120A 300W • Standard threshold drive ■ 100% avalanche tested 3 1 Description This MOSFET is the latest development of


    Original     		STP120NF04 O-220 JESD97 P120NF04 STP120NF04 p120nf PDF

    MAR 618 transistor

    Abstract: STB200N4F3 JESD97 200N4F3
    Text: STB200N4F3 N-channel 40V - 0.0035Ω - 120A - D2PAK Planar STripFET Power MOSFET Features Type VDSS RDS on ID Pw STB200N4F3 40V <0.0040Ω 120A 300W • 100% avalanche tested ■ Standard threshold drive 3 1 Description D²PAK This Power MOSFET is the latest development of


    Original     		STB200N4F3 MAR 618 transistor STB200N4F3 JESD97 200N4F3 PDF

    IXZH10N50LA

    Abstract: ixzh10n50l IXZH10N50 7310 mosfet mosfet 168.54 IXZ210N50L 78105 ixzh ixzh10n TD 6905
    Text: IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		IXZH10N50LA/B 175MHz IXZH10N50LB IXZH10N50LA dsIXZH10N50LA/B IXZH10N50LA ixzh10n50l IXZH10N50 7310 mosfet mosfet 168.54 IXZ210N50L 78105 ixzh ixzh10n TD 6905 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP120NF04 N-channel 40V - 0.0047Ω - 120A TO-220 STripFET II MOSFET General features Type VDSS RDS on ID Pw STP120NF04 40V <0.0050Ω 120A 300W • Standard threshold drive ■ 100% avalanche tested u d o 3 1 Description This MOSFET is the latest development of


    Original     		STP120NF04 O-220 PDF

    B200N04

    Abstract: JESD97 STB200N04
    Text: STB200N04 N-channel 40V - 0.0035Ω - 120A - D2PAK Planar STripFET Power MOSFET General features Type VDSS RDS on ID Pw STB200N04 40V <0.0040Ω 120A 300W • 100% avalanche tested ■ Standard threshold drive 3 1 Description D²PAK This Power MOSFET is the latest development of


    Original     		STB200N04 B200N04 JESD97 STB200N04 PDF

    amidon 43 toroid core

    Abstract: amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer
    Text: APPLICATION NOTE APT9802 By: Richard Frey, P.E. A 300W MOSFET Linear Amplifier for 50 MHz Reprinted from the May/June 1999 Issue of QEX Magazine Courtesy of ARRL, Inc. A 300W MOSFET Linear Amplifier for 50 MHz Richard Frey, Sr. Applications Engineer, Advanced Power Technology, Inc., Bend, Oregon USA


    Original     		APT9802 ARF448A/B amidon 43 toroid core amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer PDF

    88-108 rf amplifier

    Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
    Text: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		AN1229 SD2932 SD2932. SD2932 88-108 rf amplifier 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k PDF

    all mosfet power amplifier

    Abstract: 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet
    Text: FM500-108 500 W FM RF Power Amplifier Designed for FM transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • • • MOSFET Amplifier BW: 87.5 - 108 MHz


    Original     		FM500-108 40W267 all mosfet power amplifier 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IDM30512CW100 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET  High Power Gain  Superior thermal stability The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512


    Original     		IDM30512CW100 IDM30512CW100 30-512MHz 400MHz. 2x100mA IDM30512CW100-REV-NC-DS-REV-B PDF

    AN705

    Abstract: Si9910 Si9910DJ Si9910DY VN50300 book analog siliconix MOSFET applications book
    Text: Si9910 Adaptive Power MOSFET Driverb Features D trr Shoot-Through Current Limiting D Low Quiescent Current D CMOS Compatible Inputs D dv/dt and di/dt Control D Undervoltage Protection D Short-Circuit Protection D Compatible with Wide Range of MOSFET Devices


    Original     		Si9910 Si9910 AN705, P-34829--Rev. 18-Apr-94 VN50300 AN705 Si9910DJ Si9910DY VN50300 book analog siliconix MOSFET applications book PDF

    pin diagram of MOSFET

    Abstract: flyback data pin diagram P3482 bootstrap diode HIGH-VOLTAGE HALF BRIDGE DRIVER schematic diagram simple ac power supply short circuit protection schematic diagram Si9910DY VN50300 VN50300 L
    Text: Si9910 Adaptive Power MOSFET Drivera Features D trr Shoot-Through Current Limiting D Low Quiescent Current D CMOS Compatible Inputs D dv/dt and di/dt Control D Undervoltage Protection D Short-Circuit Protection D Compatible with Wide Range of MOSFET Devices


    Original     		Si9910 Si9910 AN705, P-34829--Rev. 18-Apr-94 VN50300 pin diagram of MOSFET flyback data pin diagram P3482 bootstrap diode HIGH-VOLTAGE HALF BRIDGE DRIVER schematic diagram simple ac power supply short circuit protection schematic diagram Si9910DY VN50300 VN50300 L PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IDM500CW300 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW


    Original     		IDM500CW300 IDM500CW300 2x100mA IDM500CW300-REV-NC-DS-REV-NC PDF

    200 watt hf mosfet

    Abstract: AN1256 SD2921-10 SD2923 HF Amplifier 300w STMicroelectronics FABRICATION SITE
    Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure


    Original     		AN1256 SD2923, SD2923 200 watt hf mosfet AN1256 SD2921-10 HF Amplifier 300w STMicroelectronics FABRICATION SITE PDF

    VFT300-50

    Abstract: ASI10710 25020A
    Text: VFT300-50 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: PACKAGE STYLE .400 BAL FLG D The VFT300-50 is a gold metallized N-Channel Enhancement mode MOSFET intended for use in 50 Vdc large signal applications to 175 MHz. A FULL R B .080x45° D D


    Original     		VFT300-50 VFT300-50 080x45° ASI10710 25020A PDF

    mosfet HF amplifier

    Abstract: 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet SD2923 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier
    Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure


    Original     		AN1256 SD2923, SD2923 mosfet HF amplifier 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier PDF

    Ultrasonic humidifier circuit

    Abstract: 2SK962 equivalent ups manufacturing transformer diagram 200w dc to ac inverter Circuit diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91
    Text: POWER MOSFET APPLICATION NOTES Typical power MOSFET applications 50, I, • A u tom otive: Pow er steering, au to m o tive DC/DC converters 12V DC , electric motor driven tools, and switch replacement • Battery operated fork lifts: Power steering, running, and


    OCR Scan     		100VAC) 80VDC) 100VAC, 0-300W) 100VAC. 0-80W) 100ps/l Ultrasonic humidifier circuit 2SK962 equivalent ups manufacturing transformer diagram 200w dc to ac inverter Circuit diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91 PDF