9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier
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FDC6392S
FDC6392S
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FDC6392S
Abstract: S253
Text: FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier
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FDC6392S
FDC6392S
S253
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Untitled
Abstract: No abstract text available
Text: FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier
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FDC6392S
FDC6392S
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
UT2305L-AG3-R
UT2305G-AG3-R
OT-23-3
OT-23
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utc 324
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
OT-23-3
OT-23
QW-R502-133
utc 324
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305G-AE2-R
UT2305G-AE3-R
UT2305G-AG3-R
OT-23-3
OT-23
OT-26
OT-23
QW-R502-133
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at 8515
Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8 mosfet 23 Tsop-6 150C1
Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead
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AAT8515
AAT8515
SC70JW-8
at 8515
AAT8515IJS-T1
mosfet 23 Tsop-6
150C1
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AAT8543
Abstract: AAT8543IJS-T1 SC70JW-8
Text: AAT8543 20V P-Channel Power MOSFET General Description Features The AAT8543 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead
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AAT8543
AAT8543
SC70JW-8
AAT8543IJS-T1
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IRF3717
Abstract: F7101 IRF7101
Text: PD - 95843 IRF3717 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max 4.4m:@VGS = 10V 20V Benefits l Ultra-Low Gate Impedance
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IRF3717
EIA-481
EIA-541.
IRF3717
F7101
IRF7101
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Untitled
Abstract: No abstract text available
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2301
UT2301
UT2301L-AE2-R
UT2301G-AE2-R
UT2301L-AE3-R
UT2301G-AE3-R
OT-23-3
OT-23
QW-R502-118
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2301
UT2301
UT2301L-AE2-R
UT2301G-AE2-R
UT2301L-AE3-R
UT2301G-AE3-R
OT-23-3
OT-23
QW-R502-118
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20V P-Channel Power MOSFET
Abstract: US6M2
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
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23AG
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET Y2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2301
UT2301
UT2301G-AE2-R
UT2301G-AE3-R
OT-23-3
OT-23
QW-R502-118
23AG
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1510A ECH8668 Power MOSFET http://onsemi.com 20V, 7.5A, 17mΩ, –20V, –5A, 38mΩ, Complementary Dual ECH8 Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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ENA1510A
ECH8668
ECH8668
PW10s,
900mm2
A1510-8/8
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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Untitled
Abstract: No abstract text available
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
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QS6M4
Abstract: No abstract text available
Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
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EM6M1
Abstract: MOSFET IGSS 100A
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3416-H Power MOSFET 6.7A, 20V N-CHANNEL MOSFET DESCRIPTION The UTC UT3416-H is an N-Channel MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and high switching speed, etc.
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UT3416-H
UT3416-H
UT3416G-AE2-R
OT-23-3
QW-R208-052
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AAT8515IJS
Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8
Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally
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AAT8515
AAT8515
SC70JW-8
AAT8515IJS-T1
048REF
AAT8515IJS
AAT8515IJS-T1
SC70JW-8
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IRF7101
Abstract: EIA-541 F7101 IRF3717PBF
Text: PD - 95719 IRF3717PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free VDSS RDS on max 4.4m:@VGS = 10V 20V Benefits l Ultra-Low Gate Impedance
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IRF3717PbF
EIA-481
EIA-541.
IRF7101
EIA-541
F7101
IRF3717PBF
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