Power MOSFET, toshiba
Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series
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VDSS100V)
DP0530019
O-220SIS
Power MOSFET, toshiba
4502 mosfet
2sk3561
HIGH POWER MOSFET TOSHIBA
2SK3568
2sk3562
2SK2842
2SK3742
2SK3567 equivalent
2SK3567
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FULLY PROTECTED MOSFET
Abstract: mosfet driver in battery applications MAX1614 diode reverse voltage protection 6v battery APP2012 10mor power-switch protection mosfet
Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: MOSFET driver, reverse battery protection, mosfet, reverse battery protected, power switch drivers, diode protection May 11, 2003 APPLICATION NOTE 2012 MOSFET Driver Is Reverse-Battery Protected
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com/an2012
MAX1614:
AN2012,
APP2012,
Appnote2012,
FULLY PROTECTED MOSFET
mosfet driver in battery applications
MAX1614
diode reverse voltage protection
6v battery
APP2012
10mor
power-switch
protection mosfet
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mosfet SPICE MODEL
Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
Text: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET
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Untitled
Abstract: No abstract text available
Text: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching
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FDB15N50
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fdfs6n303
Abstract: SOIC-16 mosfet with schottky body diode
Text: October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description Features The FDFS6N303 incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and
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FDFS6N303
FDFS6N303
SOIC-16
mosfet with schottky body diode
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FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
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SC70-6
SC75-6
SuperSOTTM-3/SOT-23
Power247TM,
FLMP SuperSOT-6
Complementary MOSFETs buz11
FQD7P20
FDG6316
IRF650
FQP65N06
IRFS630
FDG329N
FDP2532
fqpf6n80
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Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123
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2N7000
2N7002
2N7002E
2N7002K
2SJ574
2SK3240
BS170
BSH108
BSS123
BSS138
Siliconix
Siliconix mosfet guide
siliconix VN10KM
Power MOSFET Cross Reference Guide
FDC6323L
fdn5618p
2n7002 siliconix
BS170
equivalent of BS170
VN10KM equivalent
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mosfet 4702
Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts
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IXZ210N50L
IXZ2210N50L
175MHz
IXZ210N50L
175MHz
mosfet 4702
72728
IXZ2210N50L
24016 AN
78259
78442
TL 4941
69106
j934
mosfet 4942
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Untitled
Abstract: No abstract text available
Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance
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PE84140
PE84140
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quad mosfet array
Abstract: 731 MOSFET PE84140 PE84140-EK 8 mosfet array F617
Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance
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PE84140
PE84140
quad mosfet array
731 MOSFET
PE84140-EK
8 mosfet array
F617
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2SK3696-01MR
Abstract: No abstract text available
Text: 2SK3696-01MR 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
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2SK3696-01MR
O-220F
2SK3696-01MR
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2SK3530
Abstract: 2SK3530-01MR DSA00259476
Text: 2SK3530-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3530-01MR
O-220F
2SK3530
2SK3530-01MR
DSA00259476
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2SK3527-01
Abstract: No abstract text available
Text: 2SK3527-01 FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3527-01
2SK3527-01
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2sk3699
Abstract: 2sk3699-01mr
Text: 2SK3699-01MR FUJI POWER MOSFET 200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3699-01MR
O-220F
2sk3699
2sk3699-01mr
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2SK3534-01MR
Abstract: 2sk3534 NC110
Text: 2SK3534-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3534-01MR
O-220F
2SK3534-01MR
2sk3534
NC110
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300v 32a mosfet
Abstract: No abstract text available
Text: 2SK3773-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators
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2SK3773-01MR
O-220F
Repetitive200
300v 32a mosfet
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2SK3607-01MR
Abstract: 2sK3607 2SK3607-01MR equivalent
Text: 2SK3607-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3607-01MR
O-220F
2SK3607-01MR
2sK3607
2SK3607-01MR equivalent
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Untitled
Abstract: No abstract text available
Text: 2SK3534-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3534-01MR
O-220F
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2SK3555-01MR
Abstract: No abstract text available
Text: 2SK3555-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3555-01MR
O-220F
2SK3555-01MR
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2SK3673-01MR equivalent
Abstract: MOSFET 700V 10A 2SK3673
Text: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3673-01MR
O-220F
2SK3673-01MR equivalent
MOSFET 700V 10A
2SK3673
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ISL6605
Abstract: ISL6605CB ISL6605CB-T ISL6605CR ISL6605CR-T ISL6605IB MO-220 TB363
Text: ISL6605 Data Sheet August 2003 FN9091.2 Synchronous Rectified MOSFET Driver Features The ISL6605 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronousrectified buck converter topology. This driver combined with
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ISL6605
FN9091
ISL6605
HIP63xx
ISL65xx
300il
ISL6605CB
ISL6605CB-T
ISL6605CR
ISL6605CR-T
ISL6605IB
MO-220
TB363
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mosfet equivalent
Abstract: 0401L MTN0401LA3
Text: CYStech Electronics Corp. Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 1/4 N-CHANNEL MOSFET MTN0401LA3 Description The MTN0401LA3 is a N-channel enhancement-mode MOSFET. Equivalent Circuit Outline MTN0401LA3 TO-92 G：Gate
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C324A3
MTN0401LA3
MTN0401LA3
UL94V-0
mosfet equivalent
0401L
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75V15
Abstract: No abstract text available
Text: 2SK3693-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3693-01MR
O-220F
75V15
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Untitled
Abstract: No abstract text available
Text: 2SK3649-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3649-01MR
O-220F
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