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    MOSFET 2000V Search Results

    MOSFET 2000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 2000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    mosfet 1200V

    Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V


    Original     		PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET IXDI414 DMOS SiC JEDEC24 RB160M-60

    AUIRF7319Q

    Abstract: 96364B 8763A
    Text: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET


    Original     		PDF 96364B AUIRF7319Q AUIRF7319Q 96364B 8763A

    Untitled

    Abstract: No abstract text available
    Text: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET


    Original     		PDF 96364B AUIRF7319Q

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


    Original     		PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A

    p-channel 250V 30A power mosfet

    Abstract: AUIRF7379Q
    Text: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified


    Original     		PDF 96366B AUIRF7379Q p-channel 250V 30A power mosfet AUIRF7379Q

    Untitled

    Abstract: No abstract text available
    Text: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified


    Original     		PDF 96366B AUIRF7379Q

    Untitled

    Abstract: No abstract text available
    Text: WTX1013 P-Channel 1.8-V G-S MOSFET P b Lead(Pb)-Free 3 FEATURES: 1 * TrenchFET@ Power MOSFET: 1.8-V Rated * Gate-Source ESD Protected: 2000V * High-Side Switching * Low On-Resistance: 1.2Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 14 ns * S-Prefix for Automotive and Other Applications Requiring


    Original     		PDF WTX1013 SC-89 06-Sep-2013 SC-89 50BSC

    8E-10

    Abstract: FDM3300NZ TC146
    Text: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDM3300NZ 2000v 8E-10 FDM3300NZ TC146

    Untitled

    Abstract: No abstract text available
    Text: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDM3300NZ 2000v 25oClopment.

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 2 1/4


    Original     		PDF 2N7002K

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2011. 4. 4 Revision No : 1 1/3


    Original     		PDF 2N7002KA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 1 1/4


    Original     		PDF 2N7000K

    KP 4 E4

    Abstract: KP82
    Text: FDM3300NZ tm Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDM3300NZ 2000v KP 4 E4 KP82

    Mosfet

    Abstract: 2N7002KU
    Text: 2N7002KU 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 3Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF 2N7002KU OT-23 Mosfet 2N7002KU

    Untitled

    Abstract: No abstract text available
    Text: 40V 2.5A Buck Controller with Integrated High-Side MOSFET ISL78206 Features The ISL78206 is an AEC Q100 qualified 40V, 2.5A synchronous buck controller with a high-side MOSFET and low-side driver integrated. The ISL78206 supports a wide input voltage range


    Original     		PDF ISL78206 ISL78206 ISL78201 5M-1994. MO-153. FN8618

    ISL89163FBEAZ

    Abstract: No abstract text available
    Text: High Speed, Dual Channel, 6A, Power MOSFET Driver with Enable Inputs ISL89163, ISL89164, ISL89165 Features The ISL89163, ISL89164, and ISL89165 are high-speed, 6A, dual channel MOSFET drivers with enable inputs. These parts are very similar to the ISL89160, ISL89161, ISL89162 drivers but


    Original     		PDF ISL89163, ISL89164, ISL89165 ISL89165 ISL89160, ISL89161, ISL89162 ISL89163FBEAZ

    MTN7002ZHS3

    Abstract: T1091 17025 mosfet reliability testing report On semiconductor power MOSFET reliability report MTN7 1000V power MOSFET reliability report marking no19 sot-23
    Text: CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching


    Original     		PDF C320S3 MTN7002ZHS3 MTN7002ZHS3 OT-323 T1091 HS0711060098A RAC9603789-E T1091 17025 mosfet reliability testing report On semiconductor power MOSFET reliability report MTN7 1000V power MOSFET reliability report marking no19 sot-23

    Untitled

    Abstract: No abstract text available
    Text: PD - 96365B AUIRF7316Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant


    Original     		PDF 96365B AUIRF7316Q

    Untitled

    Abstract: No abstract text available
    Text: High Speed, Dual Channel, 6A, Power MOSFET Driver with Enable Inputs ISL89163, ISL89164, ISL89165 Features The ISL89163, ISL89164, and ISL89165 are high-speed, 6A, dual channel MOSFET drivers with enable inputs. These parts are very similar to the ISL89160, ISL89161, ISL89162 drivers but


    Original     		PDF ISL89163, ISL89164, ISL89165 ISL89165 ISL89160, ISL89161, ISL89162

    Untitled

    Abstract: No abstract text available
    Text: High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Drivers ISL89160, ISL89161, ISL89162 Features The ISL89160, ISL89162, and ISL89162 are high-speed, 6A, dual channel MOSFET drivers. These parts are identical to the ISL89163, ISL89164, ISL89165 drivers but without the enable


    Original     		PDF 16VOUT, ISL89160, ISL89161, ISL89162 ISL89162, ISL89162 ISL89163, ISL89164, ISL89165

    Untitled

    Abstract: No abstract text available
    Text: High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Drivers ISL89160, ISL89161, ISL89162 Features The ISL89160, ISL89161, and ISL89162 are high-speed, 6A, dual channel MOSFET drivers. These parts are identical to the ISL89163, ISL89164, ISL89165 drivers but without the enable


    Original     		PDF 16VOUT, ISL89160, ISL89161, ISL89162 ISL89162 ISL89163, ISL89164, ISL89165

    3004x

    Abstract: No abstract text available
    Text: High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Driver ISL89160, ISL89161, ISL89162 Features The ISL89160, ISL89162, and ISL89162 are high-speed, 6A, dual channel MOSFET drivers. These parts are identical to the ISL89163, ISL89164, ISL89165 drivers but without the enable


    Original     		PDF 16VOUT, ISL89160, ISL89161, ISL89162 ISL89162, ISL89162 ISL89163, ISL89164, ISL89165 3004x

    asme

    Abstract: 200V AUTOMOTIVE MOSFET AUIRF7316QTR
    Text: PD - 96365B AUIRF7316Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant


    Original     		PDF 96365B AUIRF7316Q asme 200V AUTOMOTIVE MOSFET AUIRF7316QTR