1011LD200
Abstract: 1090MHZ
Text: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090
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1011LD200
55QX-1
1011LD200
1090MHZ
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Untitled
Abstract: No abstract text available
Text: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090
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1011LD200
1011LD200
55QX-1
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Untitled
Abstract: No abstract text available
Text: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090
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1011LD200
55QX-1
1011LD200
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Untitled
Abstract: No abstract text available
Text: IRCP240 Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)19 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)
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IRCP240
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717 MOSFET
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N20 Preliminary Power MOSFET 15A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N20 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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15N20
15N20
15N20L-TN3-R
15N20G-TN3-R
15N20L-TN3-T
15N20G-TN3-T
QW-R502-717
717 MOSFET
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N20 Power MOSFET 15A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N20 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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15N20
15N20
15N20L-TN3-R
15N20G-TN3-R
QW-R502-717
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF50N20 Preliminary Power MOSFET 50A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF50N20 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.
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UF50N20
UF50N20
130nC)
UF50N20L-T47-T
UF50N20G-T47-T
QW-R502-818
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2N7002K
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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OT-23
2N7002K
OT-23
500mA
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max
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50N06-F
50N06-F
50N06L-TN3-R
50N06G-TNat
QW-R502-A83
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-C Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70-C
10N70-C
10N70L-TF3-Tat
QW-R502-A80
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70-Q
O-220F
10N70-Q
O-220F1
QW-R502-967.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70Z Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70Z
10N70Z
QW-R502-935
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50N06 to 252
Abstract: MOSFET 50N06 50n06l 50N06 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06
Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max
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50N06
O-252
50N06
O-251
O-220
O-220F
QW-R502-088
50N06 to 252
MOSFET 50N06
50n06l
50N06 E
50N60L-TM3-T
50n06 to-252
50N06L-TF3-T
50N60G-TM3-T
power MOSFET 50n06
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50N60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max
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50N06
O-263
50N06
O-220
O-251
O-220F
QW-R502-088
50N60
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50n06
Abstract: MOSFET 50N06 50N06 to 252
Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max
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50N06
O-263
50N06
O-220
O-220F
O-220F3
O-251
O-252
O-252D
QW-R502-088
MOSFET 50N06
50N06 to 252
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10N65T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N65T Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65T is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high
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10N65T
10N65T
10N65TL-TF3-T
10N65TG-TF3-Tat
QW-R502-878
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N25-P Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N25-P is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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15N25-P
15N25-P
15N25L-TF1-T
15N25G-TF1-T
15Nat
QW-R502-A24
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N25 Preliminary Power MOSFET 15A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N25 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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15N25
15N25
15N25L-TF1-T
15N25G-TF1-T
QW-R502-994
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Equivalent 50N06
Abstract: MOSFET 50N06 50n06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038
Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max
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50N06
50N06
QW-R502-088
Equivalent 50N06
MOSFET 50N06
TO-252 50n06
50N06L
60V 2A MOSFET N-channel
50N06LT
50N06 DATASHEET
mosfet driver
L038
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50n06
Abstract: MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220
Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max
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50N06
50N06
50N06L
QW-R502-088
MOSFET 50N06
Equivalent 50N06
50N06 DATASHEET
p 50n06
power MOSFET 50n06
50N06-TF3-T
50N06LT
TO-220 50n06
25V 1A power MOSFET TO-220
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36N05 Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT36N05
UTT36N05
UTT36N05L-TA3-T
UTT36N05G-TA3-T
QW-R502-654
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N25 Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N25 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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15N25
15N25
15N25L-TF1-T
15N25G-TF1-T
QW-R502-994
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5n80
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N80 Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch
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5N80L-TA3-T
QW-R502-483
5n80
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d2012 mosfet
Abstract: D2010 P H D2010 d2009 D2017 "MOSFET Modules" T D2012 D2025 MOSFET d2010
Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC MOSFET MODULES N - C h a n n e l M O S F E T C H A R A C T E R IS T IC S Continuous Drain Current lc @ Tc-25°C Pulsed Drain Current Tc=25°c 1 ms Volts Amps Amps 60 2 0 11’ 200 0.028
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Tc-25
D2001
D2002
D2003
MOD2007
MOD2008
D2009
D2010
MOD2011
D2012
d2012 mosfet
D2010 P H
D2017
"MOSFET Modules"
T D2012
D2025
MOSFET d2010
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