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    MOSFET 20 NE 50 Search Results

    MOSFET 20 NE 50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 20 NE 50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET

    Abstract: 2N6784
    Text: ne>. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6784 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.25A, 200V The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for


    Original     		PDF 2N6784 2N6784 O-205AF 00A/jis MOSFET

    Untitled

    Abstract: No abstract text available
    Text: DW01M-DS-13_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF DW01M-DS-13 DW01M OT-23-6) DW01Mx-T1 DW01MC-SAã DW01MC-TA

    Untitled

    Abstract: No abstract text available
    Text: DW01M-DS-18_EN OCT 2012 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.8 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF DW01M-DS-18 DW01M DW01Mx-T1 DW01MC-SAã DW01MC-TA

    MOSFET 25 NE 50

    Abstract: MOSFET 25 NE 50 Z MOSFET 20 NE 50 Z MOSFET 20 NE 50
    Text: DW01M-DS-14_EN MAY 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.4 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF DW01M-DS-14 DW01M OT-23-6) DW01Mx-T1 DW01MC-SAã DW01MC-TA MOSFET 25 NE 50 MOSFET 25 NE 50 Z MOSFET 20 NE 50 Z MOSFET 20 NE 50

    Untitled

    Abstract: No abstract text available
    Text: DW01M-DS-15_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF DW01M-DS-15 DW01M OT-23-6) DW01Mx-T1 DW01MC-SAã DW01MC-TA

    Untitled

    Abstract: No abstract text available
    Text: DW01M-DS-12_EN DEC 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF DW01M-DS-12 DW01M OT-23-6) DW01Mx-T1

    Untitled

    Abstract: No abstract text available
    Text: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		PDF FS8855-DS-26 FS8855 500mAï 700mV 850mV

    Untitled

    Abstract: No abstract text available
    Text: DW01B-DS-12_EN JUN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 Datasheet DW01B One Cell Lithium-ion/Polymer Battery Protection IC DW01B FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		PDF DW01B-DS-12 DW01B OT-23-6) 700REF

    Untitled

    Abstract: No abstract text available
    Text: DW01C-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet DW01C One Cell Lithium-ion/Polymer Battery Protection IC DW01C FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		PDF DW01C-DS-11 DW01C

    dw01 sot-23-6

    Abstract: DW01B
    Text: DW01B-DS-13_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01B One Cell Lithium-ion/Polymer Battery Protection IC DW01B FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		PDF DW01B-DS-13 DW01B OT-23-6) dw01 sot-23-6 DW01B

    Untitled

    Abstract: No abstract text available
    Text: DW01M-DS-10_EN SEP 2010 FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y REV. 1.0 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF DW01M-DS-10 DW01M OT-23-6) 700REF

    Untitled

    Abstract: No abstract text available
    Text: FS8820P-DS-15_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet FS8820P One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8820P FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF FS8820P-DS-15 FS8820P

    DW01HA-D

    Abstract: No abstract text available
    Text: DW01HA-DS-12_EN SEP 2012 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.2 Datasheet DW01HA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01HA FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF DW01HA-DS-12 DW01HA OT-23-6) OT-23-6 DW01HA-D

    DW01HA-x

    Abstract: DW01HA-DS-13_EN
    Text: DW01HA-DS-13_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01HA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01HA FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF DW01HA-DS-13 DW01HA OT-23-6) OT-23-6 DW01HA-x DW01HA-DS-13_EN

    FS8601RA-D

    Abstract: FS8601RA-DS-13_EN
    Text: FS8601RA-DS-13_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet FS8601RA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8601RA FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF FS8601RA-DS-13 FS8601RA FS8601RA-D FS8601RA-DS-13_EN

    Untitled

    Abstract: No abstract text available
    Text: FS8601RA-DS-12_EN SEP 2012 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.2 Datasheet FS8601RA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8601RA FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF FS8601RA-DS-12 FS8601RA

    Untitled

    Abstract: No abstract text available
    Text: FS8820P-DS-17_EN JUN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.7 Datasheet FS8820P One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FS8820P FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF FS8820P-DS-17 FS8820P

    Untitled

    Abstract: No abstract text available
    Text: FS326E+G-DS-11_EN JUN 2009 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS326E+G One Cell Lithium-ion/Polymer Battery Protection IC FS326E+G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF FS326E G-DS-11

    Untitled

    Abstract: No abstract text available
    Text: FS312F-G-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS312F-G One Cell Lithium-ion/Polymer Battery Protection IC FS312F-G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation


    Original     		PDF FS312F-G-DS-11 FS312F-G

    Untitled

    Abstract: No abstract text available
    Text: DW01-G-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet DW01-G One Cell Lithium-ion/Polymer Battery Protection IC DW01-G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		PDF DW01-G-DS-11 DW01-G

    Untitled

    Abstract: No abstract text available
    Text: SiC783ACD www.vishay.com Vishay Siliconix 50 A, VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC783A is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density


    Original     		PDF SiC783ACD SiC783A MLP66-40L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TSSOP28P

    Abstract: 32-DQ
    Text: Temic SÌ6332DQ Semiconductors Triple P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) 30 I d (A) ±4.5 ±3.4 rDS(on) (^ ) 0.040 @ VGs = -10 V 0.070 @ VGS = -4.5 V p o '« 6 TSSOP-28 ne "Source Pins 2, 3, 25, 26, and 27 must be tied common. Source Pins 7, 8, 20, 21, and


    OCR Scan     		PDF 6332DQ TSSOP-28 S-47962--Rev. 22-Jul-96 TSSOP-8/-28 22-M-96 TSSOP28P 32-DQ

    k408

    Abstract: No abstract text available
    Text: _ SÌ6562DQ Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET lü U U im M y K V o s *vj N -Ch an n el R D8(ON> P I Id (A) 0.030 @ V GS = 4.5 V ± 4.5 0.040 V GS = 2.5 V ± 3.9 20 P-C ha n ne i 0.050 @ V Gs = -4 .5 V ± 3.5


    OCR Scan     		PDF 6562DQ 6562DQ_ S-56944-- 23-Nov-98 k408

    FAP-450

    Abstract: diode sy 170/20
    Text: FUJI FAP-450 N-channel MOS-FET 500V 0,38i2 1 4 A 1 9 0 W FAP-IIS Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V Gs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5


    OCR Scan     		PDF FAP-450 00Gb3b2 FAP-450 RG-50 diode sy 170/20