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    MOSFET 16N 15 Search Results

    MOSFET 16N 15 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 16N 15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pwm controller 1.5V Vcc

    Abstract: PWM Controllers db7030 geyserville
    Text: POWER MANAGEMENT: Switching Regulator PWM Controllers Drivers SYNCHRONOUS SWITCHING PWM CONTROLLERS Part Number Vcc Volts Iq Normal Mode mA Iq Sleep VID Prgm uA External MOSFET Driver Model 10 ADP3410 off: 0.925 to 2.00 Model Designator VRM Rev Level VID Prgm


    Original     		PDF ADP3421 ADP3410 ADP3160 ADP3161 ADP3162 ADP3413 ADP3412 ADP3410 Page-158 pwm controller 1.5V Vcc PWM Controllers db7030 geyserville

    ADP3168

    Abstract: mosfet 3067 ADP3205 ADP3415 "PWM Controllers" ADP3160 ADP3161 ADP3162 ADP3163 ADP3164
    Text: POWER MANAGEMENT: Switching PWM Controllers SYNCHRONOUS SWITCHING PWM CONTROLLERS Part Number Vcc Volts Iq Normal Mode mA Iq Sleep Model Designator VID D/A Output Vout VRM Rev Level uA External MOSFET Driver Model VID Prgm 10 1 ADP3410 ADP3415 0.925 to 2.00


    Original     		PDF ADP3410 ADP3415 Page-147 ADP3168 mosfet 3067 ADP3205 ADP3415 "PWM Controllers" ADP3160 ADP3161 ADP3162 ADP3163 ADP3164

    sgsp531

    Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92


    Original     		PDF VN0640N2 TX106 IRF712 VN0340N2 MTD1N40 MTD1N40-1 RFP1N40 IRFF312 IRFF312 sgsp531 2sk76 irf33 unitrode VN0340N5 sfn02806 stm231 stm331 650P

    VN1210N5

    Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10


    Original     		PDF RRF120 RRF520 UFN132 IRrj120 RRF522 SFN02802 SFN02812 SFN106A3 YTF520 IRF120 VN1210N5 BR 115N sfn02202 RRF530

    MANCHESTER ENCODER, DECODER AND CVSD SYSTEM

    Abstract: manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 CMX649 MICR505 20n10 voice activated switch project
    Text: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX649 Wireless Voice Link Design Guide AN/2WR/649Des/2 November 2004 1 Introduction The CMX649 is an innovative adaptive delta modulation ADM voice codec that was designed to serve in advanced wireless voice links. The purpose of this document is


    Original     		PDF CMX649 AN/2WR/649Des/2 MANCHESTER ENCODER, DECODER AND CVSD SYSTEM manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 MICR505 20n10 voice activated switch project

    Untitled

    Abstract: No abstract text available
    Text: STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 £2 - 1 6A - T0-220/T0-220FP _STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss RDS on Id STP 16N E06 S TP 16N E06FP 60 V 60 V < 0.100 a < 0.100 a 16 A 11 A • . . . . . TYPICAL R D S ( o n ) = 0.08 Î2


    OCR Scan     		PDF STP16NE06 STP16NE06FP T0-220/T0-220FP E06FP STP16NE06/FP O-22QFP

    Untitled

    Abstract: No abstract text available
    Text: S T Y 16N A 90 N - CHANNEL 900V - 0.5 ft - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET PRELIM IN ARY DATA TYPE STY 16N A90 • . . . . . . . V dss RDS on Id 900 V < 0.54 Q. 16 A TYPICAL RDS(on) = 0.5 EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF Max247 ax247â STY16NA90 Max247

    Untitled

    Abstract: No abstract text available
    Text: STU16NB50 N-CHANNEL 500V - 0.28CI - 15.6A-Max220 PowerMESH MOSFET TYPE V STU 16N B50 • . . . . . dss 500 V R D S o n Id < 0.33 Q. 15.6 A TYPICAL RDS(on) = 0.28 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    OCR Scan     		PDF STU16NB50 A-Max220 Max220

    16NE10

    Abstract: No abstract text available
    Text: STD16NE10 N - CHANNEL 100V - 0.07Q - 16A - IPAK/DPAK STripFET MOSFET TYPE V dss S TD 16N E10 . m . . . . . 100 V Id *DS on < 0.1 Q 16 A TYPICAL R ds(oii) = 0.07 Q EXCEPTIO NALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED


    OCR Scan     		PDF STD16NE10 O-251) O-252) O-251 O-252 16NE10

    STD16NE10

    Abstract: No abstract text available
    Text: STD16NE10 N - CHANNEL 100V - 0.07ft - 16A - IPAK/DPAK STripFET MOSFET TYP E V STD 16N E10 dss 100 V R d S o ii Id < 0.1 Q. 16 A . • TYPICAL RDS(on) =0.07 £2 EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED


    OCR Scan     		PDF STD16NE10 STD16NE10 O-251) O-252) re017 0068771-E O-252 0068772-B

    16N40E

    Abstract: high power pulse generator with mosfet mosfet 16n 15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TW 16N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POW ER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTW16N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 16N40E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 16 AMPERES 400 VOLTS


    OCR Scan     		PDF MTW16N40E/D 16N40E 340K-01

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTB16N25E/D

    TIC 122 Transistor

    Abstract: TY16N80E TY16N y16n
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY16N 80E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Ga te TMOS POWER FET 16 AMPERES 800 VOLTS This high volta ge M O S FET uses an advanced term inatio n


    OCR Scan     		PDF

    16-NSO

    Abstract: AX832 ax2003
    Text: POWER MANAGEMENT BATTERY CHARGERS MULTI-FUNCTION SUPPLIES ★ir MAX845 ★ MAX2003 75 0m W isolated tran sfo rm er d river (N iC d/N iM H . tem p, slope detection) + M A X 2 00 3A (im p rov ed M A X 2003) M A X 4 71 /4 72 (cu rren t-sen se am p. fuel g au g e) (see O p A m p table)


    OCR Scan     		PDF MAX2003 MAX845 1000-up 16-NSO AX832 ax2003

    16N25E

    Abstract: gsp5000 20F40
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP16N25E TMOS E-FET™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high


    OCR Scan     		PDF OE-05 0E-01 16N25E gsp5000 20F40

    tp16n

    Abstract: No abstract text available
    Text: S G S -1H 0M S 0N IMOigœiILliera *® STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V dss R D S o n Id STP16N E06L S TP16N E06LFP 60 V 60 V < 0 .12 Q. < 0 .12 Q. 16 A 11 A • . . . . . TYPICAL RDS(on) = 0.09


    OCR Scan     		PDF STP16NE06L STP16NE06L/FP STP16N TP16N E06LFP O-22QFP

    eel 16n

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTB16N25E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d O e v lc e T M O S P O W E R FE T 16 A M P E R E S 250 VO LTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TB16N25E eel 16n

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T Y 16N 8 0 E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n


    OCR Scan     		PDF MTY16N80E/D 340G-02 O-264

    IRF7343 N

    Abstract: RF710 IRF7343
    Text: I , In terna tional I PD- 9.1709 IQR Rectifier IR F 7 3 4 3 p r e l im i n a r y HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier


    OCR Scan     		PDF

    TH 82420

    Abstract: C205Z1
    Text: STP16NB25 STP16NB25FP N - CHANNEL 250V - 0.220Q - 16A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss RDS on Id STP16N B25 STP16NB25FP 250 V 250 V < 0 .2 8 Î2 < 0 .2 8 Q 16 A 8 A • TYPICAL RDS(on) = 0.220 Q. m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED


    OCR Scan     		PDF STP16NB25 STP16NB25FP T0-220/T0-220FP STP16N TH 82420 C205Z1

    ADG508

    Abstract: No abstract text available
    Text: ANALOG DEVICES 4/8 Channel Fault-Protected Analog Multiplexers ADG508F/ADG509F/ADG528F* F U N C T IO N A L B LO C K D IAG RA M S FEATURES Low On Resistance 300 i l typ Fast Switching Times t 0N 250 ns max t 0FF 250 ns max Low Power Dissipation (3.3 mW max)


    OCR Scan     		PDF P-20A ADG508

    4804c

    Abstract: L4804C
    Text: May 1999 PRELIMINARY ^Ék Micro Linear ML4804 Power Factor Correction and PWM Controller Combo GENERAL DESCRIPTION FEATURES The ML4804 is a controller for power factor corrected, switched mode power supplies. Rawer Factor Correction PFC allows the use of smaller, lower cost bulk


    OCR Scan     		PDF ML4804 ML4804 IBC1000-3-2 ML4824, 4804c L4804C

    Untitled

    Abstract: No abstract text available
    Text: A p r ili 9 97 PRELM M ARY ^Ék Micro Linear ML4901 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES TheM L 4901 h ig h c u rre n ts y n c h ro n o u s b u c k c o n tm H e rh a s b e e n d e sig n e d to p ro v id e h ig h efficien cy D C /t> C


    OCR Scan     		PDF ML4901