9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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mosfet 4702
Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts
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IXZ210N50L
IXZ2210N50L
175MHz
IXZ210N50L
175MHz
mosfet 4702
72728
IXZ2210N50L
24016 AN
78259
78442
TL 4941
69106
j934
mosfet 4942
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mosfet 4702
Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
mosfet 4702
IXZ2210N50L
S 8050 d 331 transistor
dv 7812
9974 mosfet
9540 mosfet
78724
78105
MJ 7364
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IXZ2210N50L
Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
IXZ2210N50L
"RF MOSFET" 300W
mosfet 4702
9540 mosfet
IXYS RF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N15V Preliminary Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is an N-Channel POWER MOSFET, it uses UTC’s advanced technology to provide customers with high switching speed and low gate charge.
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20N15V
20N15V
20N15VL-TF1-T
20N15VLG-TF1-T
O-220F1
QW-R502-915
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Untitled
Abstract: No abstract text available
Text: PD - 96284 IRF7815PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 150V 43m @VGS = 10V 25nC 1 8 S 2 7 S 3
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IRF7815PbF
110mH,
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF5N15Z Power MOSFET 5A, 150V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UF5N15Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF5N15Z
UF5N15Z
O-252
UF5N15ZL-TN3-T
UF5N15ZG-TN3-T
UF5N15ZL-TN3-R
UF5N15ZG-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 40N15 Preliminary Power MOSFET 40A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 40N15 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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40N15
40N15
O-220F2
40N15L-TF2-T
40N15LG-TF2-T
QW-R502-882
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 60N15 Preliminary Power MOSFET 60A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N15 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.
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60N15
60N15
130nC)
60N15L-T47-T
60N15G-
T47-T
QW-R502-816
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF6N15Z Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UF6N15Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF6N15Z
UF6N15Z
OT-223
UF6N15ZL-AA3-R
UF6N15ZG-AA3-R
UF6N15L-AA3-R
QW-R502-759
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF6N15 Preliminary Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF6N15 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF6N15
UF6N15
UF6N15L-AA3-R
UF6N15G-AA3-R
OT-223
QW-R502-759
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20N15
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N15 Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15 is an N-Channel POWER MOSFET, it uses UTC’s advanced technology to provide customers with high switching speed and low gate charge. The UTC 20N15 is suitable for bridge circuits, power
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20N15
20N15
20N15L-TF1-T
20N15G-TF1-T
20N15L-TF2-T
20N15G-TF2-T
20N15L-TN3-T
20N15G-TN3-T
20N15L-TN3-R
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CBVK741B019
Abstract: EO70 FDB2570 FDP2570 FDP7060 NDP4060L
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDP2570/FDB2570
CBVK741B019
EO70
FDB2570
FDP2570
FDP7060
NDP4060L
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Untitled
Abstract: No abstract text available
Text: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features Description • RDS on = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA59N30
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TESTO10
Abstract: No abstract text available
Text: FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDPF14N30
FDPF14N30
TESTO10
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Untitled
Abstract: No abstract text available
Text: FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB14N30
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Abstract: No abstract text available
Text: FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 mΩ Features Description • RDS on = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA38N30
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Abstract: No abstract text available
Text: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB28N30
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CBVK741B019
Abstract: F63TNR FDD2512 FDD6680 marking 300 to252
Text: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature
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FDD2512
CBVK741B019
F63TNR
FDD2512
FDD6680
marking 300 to252
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Untitled
Abstract: No abstract text available
Text: AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary The AOT2500L/AOB2500L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 150V 152A efficient high frequency switching performance. Both
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AOT2500L/AOB2500L
AOT2500L/AOB2500L
O-263
ViewOB2500L
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Untitled
Abstract: No abstract text available
Text: AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary The AOT2500L/AOB2500L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 150V 152A efficient high frequency switching performance. Both
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AOT2500L/AOB2500L
AOT2500L/AOB2500L
O-263
ViewOB2500L
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rf power mosfet
Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings
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IXZ215N12L
175MHz
rf power mosfet
mosfet class ab rf
IXZ215N12L
"RF MOSFET" 300W
200W vhf
300w mosfet
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Untitled
Abstract: No abstract text available
Text: AOD254 150V N-Channel MOSFET General Description Product Summary The AOD254 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of
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AOD254
AOD254
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Untitled
Abstract: No abstract text available
Text: AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized
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AOT254L/AOB254L
AOT254L/AOB254L
O-263
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