Untitled
Abstract: No abstract text available
Text: QS8J2 Datasheet Pch -12V -4A Power MOSFET lOutline VDSS -12V RDS on (Max.) 36mW ID -4A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8).
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R1120A
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Untitled
Abstract: No abstract text available
Text: QS8J2 Pch -12V -4A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 36mW ID -4A PD 1.5W lFeatures (8) TSMT8 (1) (2) (3) (7) (6) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8).
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R1120A
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Untitled
Abstract: No abstract text available
Text: QS8J2 Pch -12V -4A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 36mW ID -4A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8).
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R1120A
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Untitled
Abstract: No abstract text available
Text: AON1620 12V N-Channel MOSFET General Description Product Summary The AON1620 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON1620
AON1620
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AO4453
Abstract: No abstract text available
Text: AO4453 12V P-Channel MOSFET General Description Product Summary The AO4453 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO4453
AO4453
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Untitled
Abstract: No abstract text available
Text: AON2403 12V P-Channel MOSFET General Description Product Summary The AON2403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON2403
AON2403
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTC606P-H Power MOSFET -6A, -12V, P-CHANNEL 1.8V TRENCH MOSFET DESCRIPTION The UTC UTC606P-H is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and high switching speed.
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UTC606P-H
UTC606P-H
OT-26
QW-R502-B34
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AON2403
Abstract: No abstract text available
Text: AON2403 12V P-Channel MOSFET General Description Product Summary The AON2403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON2403
AON2403
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Untitled
Abstract: No abstract text available
Text: RZR020P01 Datasheet Pch -12V -2A Power MOSFET lOutline VDSS -12V RDS on (Max.) 105mW ID -2A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
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RZR020P01
105mW
R1120A
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Untitled
Abstract: No abstract text available
Text: Technology Licensed from International Rectifier APU3073 SYNCHRONOUS PWM CONTROLLER WITH OVER-CURRENT PROTECTION / LDO CONTROLLER FEATURES DESCRIPTION Synchronous Controller plus one LDO controller Current Limit using MOSFET Sensing Single 5V/12V Supply Operation
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APU3073
V/12V
400KHz
APU3073
330uF
APU3073.
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3RT15
Abstract: APU3073 irf7832 2590P 6TPB47M APU3039 APU3073O mosfet driver amp ic
Text: Technology Licensed from International Rectifier APU3073 SYNCHRONOUS PWM CONTROLLER WITH OVER-CURRENT PROTECTION / LDO CONTROLLER FEATURES DESCRIPTION Synchronous Controller plus one LDO controller Current Limit using MOSFET Sensing Single 5V/12V Supply Operation
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APU3073
V/12V
400KHz
APU3073
330uF
APU3073.
3RT15
irf7832
2590P
6TPB47M
APU3039
APU3073O
mosfet driver amp ic
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Untitled
Abstract: No abstract text available
Text: PI2126 Series 30 Volt, 12 Amp Full-Function Active ORing Solution Description Features The PI2126 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state resistance MOSFET designed for use in 12V Bus redundant power system
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PI2126
PI2126
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Untitled
Abstract: No abstract text available
Text: Rev 1; 9/08 12V Hot-Plug Switch The DS4560 is a self-contained hot-plug switch intended to be used on +12V power buses to limit through current and to control the power-up output-voltage ramp. The device contains an on-board 25mΩ n-channel power MOSFET that is actively closed-loop controlled to ensure that an adjustable current limit is not
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DS4560
DS4560
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Untitled
Abstract: No abstract text available
Text: Rev 0; 6/08 12V Hot-Plug Switch The DS4560 is a self-contained hot-plug switch intended to be used on +12V power buses to limit through current and to control the power-up output-voltage ramp. The device contains an on-board 25mΩ n-channel power MOSFET that is actively closed-loop controlled to ensure that an adjustable current limit is not
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DS4560
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Untitled
Abstract: No abstract text available
Text: 19-4619; Rev 2; 5/09 12V Hot-Plug Switch The DS4560 is a self-contained hot-plug switch intended to be used on +12V power buses to limit through current and to control the power-up output-voltage ramp. The device contains an on-board 25mΩ n-channel power MOSFET that is actively closed-loop controlled to ensure that an adjustable current limit is not
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DS4560
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2590P
Abstract: irf7832 6TPB47M IRU3073 IRU3073CQ 3RT15 8A315 6TPB150M sanyo voltage regulator c9b
Text: Data Sheet No. PD94699 IRU3073 SYNCHRONOUS PWM CONTROLLER WITH OVER-CURRENT PROTECTION / LDO CONTROLLER FEATURES DESCRIPTION Synchronous Controller plus one LDO controller Current Limit using MOSFET Sensing Single 5V/12V Supply Operation Programmable Switching Frequency up to
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PD94699
IRU3073
V/12V
400KHz
IRU3073
2590P
irf7832
6TPB47M
IRU3073CQ
3RT15
8A315
6TPB150M sanyo
voltage regulator c9b
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MOSFET
Abstract: No abstract text available
Text: ACE2302B N-Channel Enhancement Mode MOSFET Description The ACE2302B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable
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ACE2302B
ACE2302B
MOSFET
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FILM CAPACITOR 0.1/10/100
Abstract: kze capacitor matsushita film capacitor ECQ 10s100 switching regulator 12v sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor Nippon Chemi-Con kze capacitor
Text: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D51A
ENA1031
A1031-11/11
FILM CAPACITOR 0.1/10/100
kze capacitor
matsushita film capacitor ECQ
10s100
switching regulator 12v
sanyo electrolytic capacitor
thyristor control circuit diagram
variable capacitor
Nippon Chemi-Con kze capacitor
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Untitled
Abstract: No abstract text available
Text: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D51A
ENA1031
A1031-11/11
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Untitled
Abstract: No abstract text available
Text: AO6404 20V N-Channel MOSFET General Description Product Summary The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.
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AO6404
AO6404
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Untitled
Abstract: No abstract text available
Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D51A
ENA0985
A0985-11/11
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Untitled
Abstract: No abstract text available
Text: AO6404 20V N-Channel MOSFET General Description Product Summary The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.
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AO6404
AO6404
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Untitled
Abstract: No abstract text available
Text: AO6404 20V N-Channel MOSFET General Description Product Summary The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.
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AO6404
AO6404
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tn8d51a
Abstract: HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326
Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D51A
ENA0985
A0985-11/11
tn8d51a
HK-12S120-1010
switching regulator 12v
nippon kze
2wl1
IT1326
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