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    MOSFET 126 Search Results

    MOSFET 126 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 126 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . OPTOCOUPLER Optocouplers – MOSFET Drivers with Solid State Reliability VO1263, LH1262 Photovoltaic Single-Component/Isolated MOSFET Driver Solutions Vishay’s isolated MOSFET drivers combine isolation, MOSFET driver circuitry, and a self-contained


    Original     		PDF VO1263, LH1262 VO1263/LH VO1263 VMN-PT0314-1402

    t 3866 mosfet

    Abstract: No abstract text available
    Text: FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 mΩ Features Description • RDS on = 122 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA28N50 t 3866 mosfet

    3nf CAPACITOR

    Abstract: 839B IXS839S1
    Text: IXYS IXS839 / IXS839A / IXS839B Synchronous Buck MOSFET Driver Features: General Description • Logic Level Gate Drive Compatible The IXS839/IXS839A/IXS839B are 2A Source / 4A Sink Synchronous Buck MOSFET Drivers. These Synchronous Buck MOSFET Drivers are specifically


    Original     		PDF IXS839 IXS839A IXS839B IXS839/IXS839A/IXS839B 3000pF IXS839/839B: IXS839A/B: 3nf CAPACITOR 839B IXS839S1

    t 3866 mosfet

    Abstract: MOSFET 3866 s 61mH
    Text: FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 m Features Description • RDS on = 122 m (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA28N50 FDA28N50 t 3866 mosfet MOSFET 3866 s 61mH

    VO1263

    Abstract: high side MOSFET driver optocoupler LH1262 MOSFET Drivers Isolated mosfet gate drive circuit Isolated Floating Driver OPTOCOUPLER photovoltaic output VMN-PT0314-1205
    Text: V i shay I n tertech n olo g y, I n c . Optocouplers – MOSFET Drivers with Solid State Reliability AND TEC I INNOVAT O L OGY VO1263, LH1262 N HN OPTOCOUPLER O 19 62-2012 Photovoltaic Single-Component/Isolated MOSFET Driver Solutions Vishay’s isolated MOSFET drivers combine isolation, MOSFET driver circuitry, and a self-contained


    Original     		PDF VO1263, LH1262 VO1263/LH VO1263 VMN-PT0314-1205 high side MOSFET driver optocoupler LH1262 MOSFET Drivers Isolated mosfet gate drive circuit Isolated Floating Driver OPTOCOUPLER photovoltaic output VMN-PT0314-1205

    utc 324

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2305 UT2305 UT2305L-AE2-R UT2305G-AE2-R UT2305L-AE3-R UT2305G-AE3-R OT-23-3 OT-23 QW-R502-133 utc 324

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    Mosfet J49

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND


    Original     		PDF MRF171A Mosfet J49

    mosfet 4702

    Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating


    Original     		PDF IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L mosfet 4702 IXZ2210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364

    IXZ2210N50L

    Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating


    Original     		PDF IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L IXZ2210N50L "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF

    80N08

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial


    Original     		PDF 80N08 80N08 80N08L-T47-T 80N08G-T47-T 80N08L-TA3-T 80N08G-TA3-T 80N08L-TQ2-T 80N08G-TQ2-T 80N08L-TQ2-R 80N08G-TQ2-R

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


    Original     		PDF AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial


    Original     		PDF 80N08 80N08 80N08L-T47-T 80N08G-T47-T 80N08L-TA3-T 80N08G-TA3-T 80N08L-TQ2-T 80N08G-TQ2-T 80N08L-TQ2-R 80N08G-TQ2-R

    Untitled

    Abstract: No abstract text available
    Text: FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 0.2 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQPF15P12

    Untitled

    Abstract: No abstract text available
    Text: FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 28 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild


    Original     		PDF FDMS86200DC

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET MP6M11  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm MPT6 (Duel) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Application


    Original     		PDF MP6M11 MP6M11 R1120A

    Untitled

    Abstract: No abstract text available
    Text: FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing


    Original     		PDF FCP380N60E FCPF380N60E

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a


    Original     		PDF O-220F O-220F1 O-220 O-262 QW-R502-974

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial and primary switch


    Original     		PDF 80N08 80N08 O-220 O-220 80N08L-TA3-T 80N08G-TA3-T QW-R502-468

    IRF8736PBF

    Abstract: IRF8736
    Text: PD - 97120 IRF8736PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


    Original     		PDF IRF8736PbF IRF8736PBF IRF8736

    4558 mosfet

    Abstract: 4558 dd 478D 45288 w83 310 T424 DIODE W83* dc-dc 4558 dv t424 327D
    Text: PD - 97120 IRF8736PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


    Original     		PDF IRF8736PbF 4558 mosfet 4558 dd 478D 45288 w83 310 T424 DIODE W83* dc-dc 4558 dv t424 327D

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET SH8M11  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). (8) (5) (1) (4)  Application


    Original     		PDF SH8M11 SH8M11 Pw10s, R1120A

    Transistor Arrays

    Abstract: transistor SST 126 IMD6 transistor 136 138 140
    Text: "Transistors Surface Mounted Leaded Packages Available-«> Packages Available-110 POWER MOSFET-112 POWER MOSFET- ei MPT • CPT F5 • PSD


    OCR Scan     		PDF ailable-------------------------------110 SFET----------------------------------112 T0-220FP O-247 OT-23) SC-59/Japemw PSIP12Pin. LF12Pin Transistor Arrays transistor SST 126 IMD6 transistor 136 138 140