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    MOSFET 1200V 75A Search Results

    MOSFET 1200V 75A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1200V 75A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		APTMC120AM12CT3AG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC120TAM12CTPAG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features


    Original     		APTMC120TAM12CTPAG PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    Untitled

    Abstract: No abstract text available
    Text: High Efficient Topologies for Next Generation Solar Inverter July 2008, Michael Frisch, Vincotech GmbH, Finsinger Feld 1, 82551 Ottobrunn Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications,


    Original     		H-2060 PDF

    p623f

    Abstract: 600V1200V p623
    Text: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and


    Original     		V23990-P62x-Fxx-U-02-14 P623-F04-PM P623-F14-PM P623-F24-PM P624-F24-PM P625-F24-PM p623f 600V1200V p623 PDF

    H-Bridge

    Abstract: 600V1200V p623f
    Text: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and


    Original     		V23990-P62x-Fxx-U-02-14 P623-F04-PM P623-F14-PM P623-F24-PM P624-F24-PM P625-F24-PM P629-F44-U-02-14 H-Bridge 600V1200V p623f PDF

    10-FZ06NBA075SA-P916L33

    Abstract: No abstract text available
    Text: Power Modules Vincotech Releases New Family of Dual & Symmetric Boosters flowBOOST 0 - Excellent performance for 1200V applications Dual Booster IGBT flowBOOST 0: Different applications demand different modules, and each has a specific set of requirements. Some applications demand bypass diodes. Others


    Original     		V23990-P621-F68-PM V23990-P629-F68-PM 10-FZ06NBA075SA-P916L33 PDF

    mosfet based power inverter project

    Abstract: MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC NATIONAL IGBT Mitsubishi SiC IPM module "silicon carbide" FET home made inverter
    Text: Present PresentStatus StatusAnd AndFuture FutureProspects Prospectsof ofSiC SiCPower PowerDevices Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi Electric Corporation, Japan John Donlon Senior Application Engineer, Powerex Inc., U.S.A.


    Original     		PDF

    95A sensor hall

    Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
    Text: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.


    Original     		PDF

    SEMIKRON SKHI 65

    Abstract: SKHI 65 Semikron Skai 2 SKM75GB123D semikron IGBT semikron skai igbt trigger by opto skhi 64 Semikron skai mosfet single phase inverter IGBT driver
    Text: ✓ plug + play ✓ protection ✓ easy interface ✓ integrated DC-DC converter ✓ 4kV isolation IGBT and MOSFET SKHI - Drivers Integrated Components and Integrated Solutions SEMIKRON - IGBT/MOSFET Drivers SKHI SEMIKRON - Driver ASICs SKIC SKHI-DRIVER ✓ Protection


    Original     		D-90253 SEMIKRON SKHI 65 SKHI 65 Semikron Skai 2 SKM75GB123D semikron IGBT semikron skai igbt trigger by opto skhi 64 Semikron skai mosfet single phase inverter IGBT driver PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    50w ultrasonic generator 40khz

    Abstract: igbt welding machine scheme 40KHZ ULTRASONIC CLEANER driver CIRCUIT 600V 300A igbt dc to dc boost converter 48v to 230v inverters circuit diagram 3b0565 e-bike motor controller 5V 100w unipolar STEPPER MOTOR 500w inverter pcb board circuit diagram 48V 500w 3 phase BLDC motor controller
    Text: Efficient Semiconductor Solutions for Motor Control and Drives Applications ] www.infineon.com/motorcontrol] Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Choosing the right Microcontroller 10


    Original     		98/2000/XP 6ED003L06 SPD04N50C3 IDT08S60 SPA15N60C3 ICE3B0565 XC886 XC878/XE164 XC800 XC878 50w ultrasonic generator 40khz igbt welding machine scheme 40KHZ ULTRASONIC CLEANER driver CIRCUIT 600V 300A igbt dc to dc boost converter 48v to 230v inverters circuit diagram 3b0565 e-bike motor controller 5V 100w unipolar STEPPER MOTOR 500w inverter pcb board circuit diagram 48V 500w 3 phase BLDC motor controller PDF

    IEGT 4500V

    Abstract: depletion p mosfet IGBT CHIP 1700V IEGT PCIM eric motto NITTA
    Text: A 1700V LPT-CSTBT With Low Loss and High Durability Eric Motto*, John Donlon*, Tsutomu Nakagawa*, Youichi Ishimura*, Katsumi Satoh*, Junji Yamada*, Masanori Yamamoto* Shigeru Kusunoki*, Hideki Nakamura*, Katsumi Nakamura* *Powerex Incorporated, Youngwood, PA USA


    Original     		PDF

    tyco igbt module 25A

    Abstract: 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
    Text: Power Modules Fast Power Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment.With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power range


    Original     		Vincotech-012-0508 ISO9001 TS16949 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A PDF

    half bridge converter 2kw

    Abstract: 5kw 20khz diagram induction heating 66a hall sensor TLE4209A XMC4700 ISO26262 1ED020112f TLE7183QU TLE5009 btm7752
    Text: Efficient Semiconductor Solutions for Motor Control and Drives www.infineon.com/motorcontrol Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Product Families 10 Microcontrollers 10 Low-Voltage Products


    Original     		PDF

    G30N120CN

    Abstract: HGTG30N120CN LD26 RHRP30120
    Text: HGTG30N120CN Data Sheet January 2000 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		HGTG30N120CN HGTG30N120CN 350ns 150oC G30N120CN LD26 RHRP30120 PDF

    GTO thyristor 1200V 50A

    Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
    Text: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES


    Original     		PDF

    SKHI 65

    Abstract: semikron IGBT semikron SKHI 64 SEMIKRON SKHI 65 SKHI 64 Semikron Skai 2 skm200gb123d igbt driver SKHI 23/12 semikron SKHI 21 semikron ASIC SKIC
    Text: ✓ plug + play ✓ vollständiger Schutz ✓ 4kV Isolationsspannung ✓ einfache Anwenderschnittstelle ✓ DC-DC-Wandler integriert IGBT und MOSFET SKHI - Treiber Integrierte Komponenten und Integrierte Lösungen SEMIKRON - IGBT/MOSFET Ansteuerungen SKHI


    Original     		D-90253 SKHI 65 semikron IGBT semikron SKHI 64 SEMIKRON SKHI 65 SKHI 64 Semikron Skai 2 skm200gb123d igbt driver SKHI 23/12 semikron SKHI 21 semikron ASIC SKIC PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG30N120CN / HGTG5A30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN and HGT5A30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		HGTG30N120CN HGTG5A30N120CN HGT5A30N120CN TA49281. PDF

    G30N120CN

    Abstract: MOSFET 1200v 30a HGTG30N120CN LD26 RHRP30120
    Text: HGTG30N120CN Data Sheet December 2001 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		HGTG30N120CN HGTG30N120CN 350ns 150oC G30N120CN MOSFET 1200v 30a LD26 RHRP30120 PDF

    TLP250 MOSFET DRIVER application note

    Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
    Text: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation


    Original     		00A/600V 00A/1200V TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase PDF

    HGTG30N120CN

    Abstract: RHRP30120 G30N120CN LD26 igbt 1200v 150a
    Text: HGTG30N120CN Data Sheet January 2000 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		HGTG30N120CN HGTG30N120CN 350ns 150oC RHRP30120 G30N120CN LD26 igbt 1200v 150a PDF

    IRGNIN075M12

    Abstract: diode C522 C524 DIODE
    Text: PD9164 IRGNIN075M12 International S Rectifier "CHOPPER HIGH SIDE SWITCH' IGBTINT-A-PAK Low conduction loss IGBT High Side Switch -=3 VCE= 1200V lc = 75A 50-• Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		IRGNIN075M12 50---VCE= C-525 4fl55452 C-526 002031b IRGNIN075M12 diode C522 C524 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG30N120CN S em iconductor March 1999 Data Sheet 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    OCR Scan     		HGTG30N120CN HGTG30N120CN 350ns 1-800-4-HARRIS PDF