IRF7521D1
Abstract: 9164
Text: PD-91646C IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 VDSS = 20V
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PD-91646C
IRF7521D1
IRF7521D1
9164
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IRGNIN075M12
Abstract: diode C522 C524 DIODE
Text: PD9164 IRGNIN075M12 International S Rectifier "CHOPPER HIGH SIDE SWITCH' IGBTINT-A-PAK Low conduction loss IGBT High Side Switch -=3 VCE= 1200V lc = 75A 50-• Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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OCR Scan
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IRGNIN075M12
50---VCE=
C-525
4fl55452
C-526
002031b
IRGNIN075M12
diode C522
C524 DIODE
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RD2001
Abstract: 5M MARKING CODE SCHOTTKY DIODE J332 CL65B
Text: PD-91649C International I«R Rectifier IRF7526D1 FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low V F Schottky Rectifier • Generation 5 Technology • Micro8™ Footprint V dss = "30V
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OCR Scan
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PDF
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PD-91649C
IRF7526D1
RD2001
5M MARKING CODE SCHOTTKY DIODE
J332
CL65B
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