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    MOSFET 10V 10A Search Results

    MOSFET 10V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 10V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MDD1653

    Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
    Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state


    Original     		PDF MDD1653 MDD1653 MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R

    mdd1653

    Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
    Text: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


    Original     		PDF MDD1653 MDD1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP

    C3018LD

    Abstract: No abstract text available
    Text: DMC3018LSD NEW PRODUCT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Complementary Pair MOSFET Low On-Resistance • N-Channel: 20mΩ @ 10V 32mΩ @ 4.5V • P-Channel: 45mΩ @ -10V 65mΩ @ -4.5V


    Original     		PDF DMC3018LSD AEC-Q101 J-STD-020 MIL-STD-202, DS31310 C3018LD

    MDF3752

    Abstract: MDF3752TH mosfet low vgs
    Text: P-Channel Trench MOSFET, -40V, -36.5A, 17mΩ Features General Description VDS = -40V ID = -36.5A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDF3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.


    Original     		PDF MDF3752 MDF3752 MDF3752TH mosfet low vgs

    MDS1652

    Abstract: No abstract text available
    Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


    Original     		PDF MDS1652 MDS1652

    mdd3752

    Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
    Text: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.


    Original     		PDF MDD3752 MDD3752 MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA

    Untitled

    Abstract: No abstract text available
    Text: DMC3018LSD N EW PRODU CT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Complementary Pair MOSFET Low On-Resistance • N-Channel: 20m @ 10V 32m @ 4.5V • P-Channel: 45m @ -10V 65m @ -4.5V Low Gate Threshold Voltage


    Original     		PDF DMC3018LSD AEC-Q101 J-STD-020 DS31310

    IRF9910PbF

    Abstract: No abstract text available
    Text: PD - 95728A IRF9910PbF Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free HEXFET Power MOSFET VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V  6 '   * '   6 '   *


    Original     		PDF 5728A IRF9910PbF IRF9910PbF

    IRF9910PbF

    Abstract: No abstract text available
    Text: PD - 95728A IRF9910PbF Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free HEXFET Power MOSFET VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V  6 '   * '   6 '   *


    Original     		PDF 5728A IRF9910PbF IRF9910PbF

    IRF9910

    Abstract: No abstract text available
    Text: PD - 95869 IRF9910 HEXFET Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V  6 '   * '   6 '   * '  Benefits


    Original     		PDF IRF9910 EIA-481 EIA-541. IRF9910

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)


    Original     		PDF ELM35603KA-S ELM35603KA-S P2204ND5G O-252-5 May-03-2006

    FDB045AN

    Abstract: FDB045AN08A0 diode marking 53
    Text: FDB045AN08A0_F085 N-Channel PowerTrench MOSFET 75V, 80A, 4.5m: Features Applications • rDS ON = 3.9m: (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		PDF FDB045AN08A0 O-263AB FDB045AN diode marking 53

    FDI047AN08A0

    Abstract: FDH047AN08A0 FDP047AN08A0
    Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems


    Original     		PDF FDP047AN08A0 FDI047AN08A0 FDH047AN08A0 FDH047AN08A0

    fdp047an08A0

    Abstract: No abstract text available
    Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems


    Original     		PDF FDP047AN08A0 FDI047AN08A0 FDH047AN08A0

    76419s

    Abstract: No abstract text available
    Text: HUF76419S3ST_F085 N-Channel Power Trench MOSFET 60V, 29A, 35mΩ D D Features „ Typ rDS on = 26.7mΩ at VGS = 10V, ID = 29A „ Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB S S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted


    Original     		PDF HUF76419S3ST O-263AB 76419s

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)


    Original     		PDF ELM35603KA-S ELM35603KA-S P2204ND5G O-252-5 May-03-2006

    apm4910

    Abstract: APM4910K 27BSC STD-020C APM49
    Text: APM4910K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • Channel 1 30V/7A, RDS ON = 22mΩ (typ.) @ VGS = 10V RDS(ON) = 26mΩ (typ.) @ VGS = 4.5V • Channel 2 Top View of SOP − 8 30V/10A, RDS(ON) = 12mΩ (typ.) @ VGS =10V D1 (1) (2)


    Original     		PDF APM4910K 0V/10A, MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 apm4910 APM4910K 27BSC STD-020C APM49

    DMG4511SK4

    Abstract: No abstract text available
    Text: DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 35V 35mΩ @ VGS = 10V 13A -35V 45mΩ @ VGS = -10V -12A • • • • • • • • • Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG4511SK4 DS32042 DMG4511SK4

    FDB045AN08A0

    Abstract: No abstract text available
    Text: tm FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		PDF FDB045AN08A0 O-263AB FDB045AN08A0

    Untitled

    Abstract: No abstract text available
    Text: FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		PDF FDB045AN08A0 O-263AB

    TO262AB

    Abstract: No abstract text available
    Text: FDP047AN08A0 / FDI047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		PDF FDP047AN08A0 FDI047AN08A0 O-220AB O-262AB TO262AB

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10UM-06 HIGH-SPEED SWITCHING USE FS10UM-06 • 10V DRIVE • VDSS . 60V • rDS ON (MAX) .78mQ • Id . 10A


    OCR Scan     		PDF FS10UM-06

    T04 diode

    Abstract: h1010
    Text: MITSUBISHI Neh POWER MOSFET FS10UM-03 HIGH-SPEED SWITCHING USE FS10UM-03 • 10V DRIVE • VDSS . 30V • rDS ON (MAX) .95mi2 • Id .10A


    OCR Scan     		PDF FS10UM-03 95mi2 T04 diode h1010

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10SM-2 HIGH-SPEED SWITCHING USE • • • • • 10V DRIVE VDSS . -100V rDS ON (MAX) • . 0.23Î1 Id . 10A


    OCR Scan     		PDF FS10SM-2 -100V 100ns