MDD1653
Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state
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MDD1653
MDD1653
MDD*1653
mdd1653 MOSFET
MDD1653rh
MDD1653RP
MagnaChip Semiconductor Ltd. MDD1653
MagnaChip Semiconductor Ltd. MDD1653 rg
1E52
MDD165
MDD1653R
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mdd1653
Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
Text: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching
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MDD1653
MDD1653
mdd1653 MOSFET
MagnaChip Semiconductor Ltd. MDD1653
MDD*1653
50a 30v 8.5m MOSFET
MDD1653R
30V 20A power p MOSFET
MagnaChip Semiconductor Ltd. MDD1653 rg
MDD1653T
MAGNACHIP
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C3018LD
Abstract: No abstract text available
Text: DMC3018LSD NEW PRODUCT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Complementary Pair MOSFET Low On-Resistance • N-Channel: 20mΩ @ 10V 32mΩ @ 4.5V • P-Channel: 45mΩ @ -10V 65mΩ @ -4.5V
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DMC3018LSD
AEC-Q101
J-STD-020
MIL-STD-202,
DS31310
C3018LD
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MDF3752
Abstract: MDF3752TH mosfet low vgs
Text: P-Channel Trench MOSFET, -40V, -36.5A, 17mΩ Features General Description VDS = -40V ID = -36.5A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDF3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.
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MDF3752
MDF3752
MDF3752TH
mosfet low vgs
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MDS1652
Abstract: No abstract text available
Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching
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MDS1652
MDS1652
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mdd3752
Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
Text: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.
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MDD3752
MDD3752
MDD3752RH
P-channel Trench MOSFET
MDD*3752
MDD375
MagnaChip Semiconductor
mosfet 441
Pchannel
mosfet p-channel 10A
3ROA
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Untitled
Abstract: No abstract text available
Text: DMC3018LSD N EW PRODU CT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Complementary Pair MOSFET Low On-Resistance • N-Channel: 20m @ 10V 32m @ 4.5V • P-Channel: 45m @ -10V 65m @ -4.5V Low Gate Threshold Voltage
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DMC3018LSD
AEC-Q101
J-STD-020
DS31310
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IRF9910PbF
Abstract: No abstract text available
Text: PD - 95728A IRF9910PbF Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free HEXFET Power MOSFET VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V 6 ' * ' 6 ' *
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5728A
IRF9910PbF
IRF9910PbF
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IRF9910PbF
Abstract: No abstract text available
Text: PD - 95728A IRF9910PbF Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free HEXFET Power MOSFET VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V 6 ' * ' 6 ' *
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5728A
IRF9910PbF
IRF9910PbF
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IRF9910
Abstract: No abstract text available
Text: PD - 95869 IRF9910 HEXFET Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V 6 ' * ' 6 ' * ' Benefits
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IRF9910
EIA-481
EIA-541.
IRF9910
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)
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ELM35603KA-S
ELM35603KA-S
P2204ND5G
O-252-5
May-03-2006
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FDB045AN
Abstract: FDB045AN08A0 diode marking 53
Text: FDB045AN08A0_F085 N-Channel PowerTrench MOSFET 75V, 80A, 4.5m: Features Applications • rDS ON = 3.9m: (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge
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FDB045AN08A0
O-263AB
FDB045AN
diode marking 53
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FDI047AN08A0
Abstract: FDH047AN08A0 FDP047AN08A0
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
FDH047AN08A0
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fdp047an08A0
Abstract: No abstract text available
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
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76419s
Abstract: No abstract text available
Text: HUF76419S3ST_F085 N-Channel Power Trench MOSFET 60V, 29A, 35mΩ D D Features Typ rDS on = 26.7mΩ at VGS = 10V, ID = 29A Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263AB S S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
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HUF76419S3ST
O-263AB
76419s
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)
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ELM35603KA-S
ELM35603KA-S
P2204ND5G
O-252-5
May-03-2006
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apm4910
Abstract: APM4910K 27BSC STD-020C APM49
Text: APM4910K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • Channel 1 30V/7A, RDS ON = 22mΩ (typ.) @ VGS = 10V RDS(ON) = 26mΩ (typ.) @ VGS = 4.5V • Channel 2 Top View of SOP − 8 30V/10A, RDS(ON) = 12mΩ (typ.) @ VGS =10V D1 (1) (2)
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APM4910K
0V/10A,
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
apm4910
APM4910K
27BSC
STD-020C
APM49
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DMG4511SK4
Abstract: No abstract text available
Text: DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 35V 35mΩ @ VGS = 10V 13A -35V 45mΩ @ VGS = -10V -12A • • • • • • • • • Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG4511SK4
DS32042
DMG4511SK4
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FDB045AN08A0
Abstract: No abstract text available
Text: tm FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge
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FDB045AN08A0
O-263AB
FDB045AN08A0
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Untitled
Abstract: No abstract text available
Text: FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge
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FDB045AN08A0
O-263AB
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TO262AB
Abstract: No abstract text available
Text: FDP047AN08A0 / FDI047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge
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FDP047AN08A0
FDI047AN08A0
O-220AB
O-262AB
TO262AB
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10UM-06 HIGH-SPEED SWITCHING USE FS10UM-06 • 10V DRIVE • VDSS . 60V • rDS ON (MAX) .78mQ • Id . 10A
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FS10UM-06
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T04 diode
Abstract: h1010
Text: MITSUBISHI Neh POWER MOSFET FS10UM-03 HIGH-SPEED SWITCHING USE FS10UM-03 • 10V DRIVE • VDSS . 30V • rDS ON (MAX) .95mi2 • Id .10A
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FS10UM-03
95mi2
T04 diode
h1010
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10SM-2 HIGH-SPEED SWITCHING USE • • • • • 10V DRIVE VDSS . -100V rDS ON (MAX) • . 0.23Î1 Id . 10A
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FS10SM-2
-100V
100ns
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