Featured Product - TMBS
Abstract: TO-262AB "Schottky Diode" SMPC Trench MOS Schottky Rectifier SMA DO-214AB Vishay 45 V Trench MOS Barrier Schottky Rectifiers SMA SMB diode guide
Text: Featured Product - TMBS www.vishay.com Vishay General Semiconductor Industry’s First Commercial TMBS® Trench MOS Barrier Schottky Rectifier Series TO-277A SMPC ITO-220AC TO-262AA TO-3PW Vishay’s patented Trench MOS Barrier Schottky (TMBS®) rectifiers are available with seven voltage ratings from 45 V
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ITO-220AB
DO-214AC
O-220AB
DO-214AA
O-220AC
DO-214AB
12-Jul-12
Featured Product - TMBS
TO-262AB
"Schottky Diode" SMPC
Trench MOS Schottky Rectifier
SMA DO-214AB
Vishay 45 V Trench MOS Barrier Schottky Rectifiers
SMA SMB diode guide
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FDP047AN
Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
144oC,
FDH047AN08A0
FDP047AN
FDH047AN08
FDH047AN
FDP047
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IGBT DRIVER ignition coil automotive
Abstract: No abstract text available
Text: FGB3236_F085 / FGI3236_F085 EcoSPARKTM 320mJ, 360V, N-Channel Ignition IGBT Features Applications Industry Standard D2-Pak package Automotive lgnition Coil Driver Circuits o SCIS Energy = 320mJ at TJ = 25 C Coil On Plug Applications Logic Level Gate Drive
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FGB3236
FGI3236
320mJ,
320mJ
O262AB
O-263AB
IGBT DRIVER ignition coil automotive
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Untitled
Abstract: No abstract text available
Text: FGB3236_F085 / FGI3236_F085 EcoSPARKTM 320mJ, 360V, N-Channel Ignition IGBT Features Applications ̈ Industry Standard D2-Pak package ̈ Automotive lgnition Coil Driver Circuits o ̈ SCIS Energy = 320mJ at TJ = 25 C ̈ Coil On Plug Applications ̈ Logic Level Gate Drive
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FGB3236
FGI3236
320mJ,
320mJ
O-263AB
O262AB
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FDB3632
Abstract: FDP3632 FDI3632 tc144e
Text: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET Trench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB3632
FDP3632
FDI3632
FDI3632
tc144e
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67E-3
Abstract: FDI038AN06A0 FDP038AN06A0
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
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alternator diode 35a 12v
Abstract: AN-7514 FDI8441
Text: FDI8441 tm N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Features Applications Typ rDS on = 2.2mΩ at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering
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FDI8441
FDI8441
215nC
alternator diode 35a 12v
AN-7514
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Untitled
Abstract: No abstract text available
Text: FQB27N25TM_F085/FQI27N25TU_F085 N-Channel MOSFET D 250 V, 25.5 A, 131 mΩ Features Typ RDS on = 108mΩ at VGS = 10V, ID = 25.5A Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A G UIS Capability S D TO-263AB RoHS Compliant TO-262AB Qualified to AEC Q101
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FQB27N25TM
F085/FQI27N25TU
O-263AB
O-262AB
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2532
FDP2532
FDI2532
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67E-3
Abstract: FDI038AN06A0 FDP038AN06A0
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
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Untitled
Abstract: No abstract text available
Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
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KSM038AN06A0
KSMI038AN06A0
O-220AB
O-262AB
24e-3
08e-3
28e-2
FDP035AN06A0T
45e-3
65e-2
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67E-3
Abstract: FDI038AN06A0 FDP035AN06A0T FDP038AN06A0 DIODE N20 fdp038an06a0t
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
FDP035AN06A0T
DIODE N20
fdp038an06a0t
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Untitled
Abstract: No abstract text available
Text: FGB3236_F085 / FGI3236_F085 EcoSPARK 320mJ, 360V, N-Channel Ignition IGBT Features Applications Industry Standard D2-Pak package Automotive lgnition Coil Driver Circuits o SCIS Energy = 320mJ at TJ = 25 C Coil On Plug Applications Logic Level Gate Drive
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FGB3236
FGI3236
320mJ,
320mJ
O-263AB
O262AB
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1N5822 SMD
Abstract: 1n5819 smd MBRF26 1n5817 SOD-123 MELF GLASS Schottky Blue SB360 smd 1N5817 smd 1N5819 SOD-123 DO-213AB GLASS Schottky Blue smd package 1N5819
Text: SCHOTTKY RECTIFIERS Package IF AV V(BR) Range Max VF @ lF Device(1) Family(3) Type (V) (V) (A) MBR0520L+ MBR0530 MBR0540 SB020 - SB060 1N5817 - 1N5819 1N5817G - 1N5819G 1N5817M - 1N5819M BYM13-xx SB120 - SB160 SB1H90 - SB1H100+ SGL41-xx SL03+ SL04+ SS12 - SS16
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MBR0520L+
MBR0530
MBR0540
SB020
SB060
1N5817
1N5819
1N5817G
1N5819G
1N5817M
1N5822 SMD
1n5819 smd
MBRF26
1n5817 SOD-123
MELF GLASS Schottky Blue
SB360 smd
1N5817 smd
1N5819 SOD-123
DO-213AB GLASS Schottky Blue
smd package 1N5819
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alternator diode 35a 12v
Abstract: FDI8441
Text: FDI8441 tm N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Features Applications Typ rDS on = 2.2mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 215nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDI8441
215nC
FDI8441
alternator diode 35a 12v
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ISL9N303AP3
Abstract: ISL9N303AS3 ISL9N303AS3ST N303AP N303AS diode marking 41a on semiconductor KP20
Text: PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining
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ISL9N303AP3
ISL9N303AS3ST
ISL9N303AS3
7000pF
ISL9N303AS3
N303AP
N303AS
diode marking 41a on semiconductor
KP20
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Untitled
Abstract: No abstract text available
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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FDI8441
Abstract: No abstract text available
Text: FDI8441_F085 N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Features Applications Typ rDS on = 2.2mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 215nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDI8441
215nC
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FDB3632
Abstract: No abstract text available
Text: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB3632
FDP3632
FDI3632
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Untitled
Abstract: No abstract text available
Text: FDI8442_F085 N-Channel PowerTrench MOSFET 40V, 80A, 3.1m: Features Applications Typ rDS on = 2.3m: at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10)= 181nC at VGS= 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDI8442
181nC
O-262AB
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10BQ100PbF
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Worldwide Leader in Power Rectifiers Rectifiers FEATURED PRODUCTS • • • • • Bridge Rectifiers Fast Recovery Rectifiers Schottky Rectifiers Standard Rectifiers Ultrafast Recovery Rectifiers
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VMN-SG2125-1403
DISC9337-2726
10BQ100PbF
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IGBT DRIVER ignition coil automotive
Abstract: automotive ignition coil on plug smart ignition igbt FGI3236 FGB3236 advance ignition IGBT GS igbt ignition ignition switch on coil smart igbt programmable ignition automotive
Text: FGB3236_F085 / FGI3236_F085 EcoSPARKTM 320mJ, 360V, N-Channel Ignition IGBT Features Applications Industry Standard D2-Pak package Automotive lgnition Coil Driver Circuits o SCIS Energy = 320mJ at TJ = 25 C Coil On Plug Applications Logic Level Gate Drive
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FGB3236
FGI3236
320mJ,
320mJ
O-263AB
O262AB
IGBT DRIVER ignition coil automotive
automotive ignition coil on plug
smart ignition igbt
advance ignition
IGBT GS
igbt ignition
ignition switch on coil smart igbt
programmable ignition automotive
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