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    MOSFET 1026 Search Results

    MOSFET 1026 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1026 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		PDF 2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N

    PHILIPS MOSFET MARKING

    Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107

    mosfet K 2865

    Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING

    TRANSISTOR ww1

    Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
    Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY


    Original     		PDF BLF548 AN98021 BLF548 SCA57 TRANSISTOR ww1 mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350

    SS550

    Abstract: 948S
    Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount 2.5 V/2.7 V* 1.8 V QT Typ nC @ VGS = 4.5 V (5.0 V)/10 V* 0.052 0.072 0.12 12 −3.7 0.96 0.085 0.12 0.21 7.5 −3.2 0.20 0.35 −1.3 −1.0 RDS(on) Max (W) @ VGS = VDSS (V)


    Original     		PDF OT-23 NTGS3433 NTGS3443 NTGS3441 NTGS4111P NTGS3455 NTGS3446 NUD3048MT1 NTR2101P NTR4101P SS550 948S

    CMX-MS11

    Abstract: BH17 CMX100D6 CMX200D3 CMX60D5 MS11 TS-35
    Text: Series CMX - MS11 6 -10 Amp • 0-100 Vdc • DC Output DC output SPST-NO solid state relays use MOSFET output for high switching capabilities in a DIN Rail TS-35 mount air-cooled package. • DIN Rail Mount (TS 35) • MOSFET Output • Extra Low On State


    Original     		PDF TS-35) CMX60D10-MS11 CMX100D6-MS11 SJ/T11364 SJ/T11364 CMX-MS11 BH17 CMX100D6 CMX200D3 CMX60D5 MS11 TS-35

    Untitled

    Abstract: No abstract text available
    Text: AUTOMOTIVE GRADE HEXFET Power MOSFET Features • Advanced Planar Technology  P-Channel MOSFET  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF O-220 AUIRFI4905

    spw -079 transformer

    Abstract: samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


    Original     		PDF 1-06A spw -079 transformer samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492

    TL494 car charger schematic diagram

    Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


    Original     		PDF accurat49565 TL494 car charger schematic diagram samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram

    051124

    Abstract: 2SK3711 B105 MT100 SK3711 sanken
    Text: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit


    Original     		PDF 2SK3711 T02-002EA-051124 051124 2SK3711 B105 MT100 SK3711 sanken

    n mosfet depletion pspice model parameters

    Abstract: NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets
    Text: Harris Semiconductor No. AN9210 Harris Power MOSFETs February 1992 A NEW PSPICE SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris Semiconductor - Mountaintop PA C. Frank Wheatley Jr. - SM, IEEE - Consultant


    Original     		PDF AN9210 ED-17 n mosfet depletion pspice model parameters NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets

    2SK3711

    Abstract: SK3711 051124 sanken power transistor B105 CF35 MT100 sanken MOSFET DSA0016517 N CH MOSFET
    Text: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit


    Original     		PDF 2SK3711 T02-002EA-051124 2SK3711 SK3711 051124 sanken power transistor B105 CF35 MT100 sanken MOSFET DSA0016517 N CH MOSFET

    sot 227b

    Abstract: ixtn210p
    Text: Advance Technical Information IXTN210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTN210P10T -100V 200ns E153432 -100A 210P10T sot 227b ixtn210p

    MOSFET TOSHIBA 2015

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step


    Original     		PDF 2SK3476 100mA, 300mA, 500mA, 700mA, 900mA MOSFET TOSHIBA 2015

    Untitled

    Abstract: No abstract text available
    Text: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2


    Original     		PDF 2SK3711 T02-002EA-051124

    Untitled

    Abstract: No abstract text available
    Text: MOSFET FKP252 December. 2005 Package-TO220F Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed Applications • PDP driving • High speed switching Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings


    Original     		PDF FKP252 Package---TO220F T02-003EA-051206

    EKV550

    Abstract: B105
    Text: 50V N-ch MOSFET EKV550 January. 2006 •Features ■Package—TO-220 • Low on-resistance • Avalanche energy capability guaranteed • Built-in Gate protection diode against electrostatic discharge ESD ■Applications • DC-DC Converters • High speed switching


    Original     		PDF EKV550 Package--TO-220 T02-005JA-060111 EKV550 B105

    ekv550

    Abstract: B105 CF35 sanken MOSFET
    Text: 50V N-ch MOSFET EKV550 January. 2006 •Features ■Package—TO-220 • Low on-resistance • Avalanche energy capability guaranteed • Built-in Gate protection diode against electrostatic discharge ESD ■Applications • DC-DC Converters • High speed switching


    Original     		PDF EKV550 Package--TO-220 T02-005JA-060111 ekv550 B105 CF35 sanken MOSFET

    FKP252

    Abstract: sanken power transistor B105 CF35 FM20 TC1250
    Text: MOSFET FKP252 December. 2005 •Package-TO220F ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings


    Original     		PDF FKP252 Package---TO220F T02-003EA-051206 FKP252 sanken power transistor B105 CF35 FM20 TC1250

    FKP252

    Abstract: No abstract text available
    Text: MOSFET FKP252 December. 2005 •Package-TO220F ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings


    Original     		PDF FKP252 Package---TO220F PW100sec, T02-003EA-051206 FKP252

    STR X6759

    Abstract: STR X6759 pin output STRX6768 str x6768 STR-X6757 strX6759 STR-X6759 STR-X6769 str x6757 STR X6759 APPLICATIONS
    Text: Product Information STR-X6700 Series Off-Line Quasi-Resonant Switching Regulators Introduction The STR-X6700 series integrates a quasi-resonant control IC and a MOSFET with avalanche guarantee. In normal operation, the device provides high efficiency and low EMI


    Original     		PDF STR-X6700 STR-X6729, STR-X6759N, STR-X6768N) STR X6759 STR X6759 pin output STRX6768 str x6768 STR-X6757 strX6759 STR-X6759 STR-X6769 str x6757 STR X6759 APPLICATIONS

    FIL-3C

    Abstract: to-92 mosfet 13T13
    Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low


    OCR Scan     		PDF T0257AB SM8F13* SM8F33* SM8F23* SM8F43* T0258AA FT0258AA HDS100 FIL-3C to-92 mosfet 13T13

    Untitled

    Abstract: No abstract text available
    Text: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description □ +400V input to output isolation □ No external voltage supply required


    OCR Scan     		PDF HT0740 HT0740LG HT0740N4 600pF

    Untitled

    Abstract: No abstract text available
    Text: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description □ ±400V input to output isolation □ No external voltage supply required


    OCR Scan     		PDF HT0740 HT0740LG HT0740N4 600pF 7732T5 00D4413