MOSFET 1000v 30a
Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OM9027SP1
OM9029SP1
OM9028SP1
OM9030SP1
OM9027SP1
OM90Surge
300msec,
MOSFET 1000v 30a
10A, 100v fast recovery diode
OM9029SP1
OM9030SP1
diode 1000V 10a
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ IXFL34N100 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR
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ISOPLUS264TM
IXFL34N100
ISOPLUS264
IXFN36N100
338B2
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IXFL34N100
Abstract: IXFN36N100
Text: IXFL34N100 HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR
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IXFL34N100
ISOPLUS264TM
ISOPLUS264
00A/s
IXFN36N100
338B2
IXFL34N100
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Untitled
Abstract: No abstract text available
Text: AOD2N100 1000V,2A N-Channel MOSFET General Description Product Summary The AOD2N100 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with
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AOD2N100
AOD2N100
19ABA
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Untitled
Abstract: No abstract text available
Text: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current
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OM6034NM
OM6036NM
OM6035NM
OM6037NM
MIL-S-19500,
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OM6005
Abstract: OM6034NM OM6035NM OM6036NM OM6037NM OM6106 OM6006
Text: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current
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OM6034NM
OM6036NM
OM6035NM
OM6037NM
MIL-S-19500,
OM6005
OM6036NM
OM6037NM
OM6106
OM6006
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MOSFET 1000v 30a
Abstract: SCHEMATIC POWER AUDIO MOSFET MOSFET 1000V audio power mosfet
Text: OM6034NM OM6035NM OM6036NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current
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OM6034NM
OM6035NM
OM6036NM
OM6037NM
MIL-S-19500,
aL-S-19500,
OM6035NM
OM6037NM
MOSFET 1000v 30a
SCHEMATIC POWER AUDIO MOSFET
MOSFET 1000V
audio power mosfet
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Untitled
Abstract: No abstract text available
Text: AOD2N100 1000V,2A N-Channel MOSFET General Description Product Summary The AOD2N100 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with
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AOD2N100
AOD2N100
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rectifier 1046
Abstract: MMIX1F44N100Q3
Text: Advance Technical Information MMIX1F44N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 30A Ω 245mΩ 300ns D N-Channel Enhancement Mode Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings
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MMIX1F44N100Q3
300ns
44N100Q3
2-15-11-A
rectifier 1046
MMIX1F44N100Q3
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MMIX1F44N100Q3
Abstract: No abstract text available
Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class MMIX1F44N100Q3 VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 30A Ω 245mΩ 300ns D N-Channel Enhancement Mode Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings
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MMIX1F44N100Q3
300ns
44N100Q3
2-15-11-A
MMIX1F44N100Q3
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44N100Q3
Abstract: MMIX1F44N100Q3
Text: Advance Technical Information MMIX1F44N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 30A Ω 245mΩ 300ns D N-Channel Enhancement Mode Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings
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MMIX1F44N100Q3
300ns
44N100Q3
2-15-11-A
MMIX1F44N100Q3
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Untitled
Abstract: No abstract text available
Text: APTM100TA35SCTPG APTM100TA35SCPG Triple phase leg MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control
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APTM100TA35SCTPG
APTM100TA35SCPG
APTM100TA35SC
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Untitled
Abstract: No abstract text available
Text: APTM100TA35SCTPG APTM100TA35SCPG Triple phase leg MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control
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APTM100TA35SCTPG
APTM100TA35SCPG
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PDF
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Untitled
Abstract: No abstract text available
Text: APTM100H45ST Full bridge Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ Ω max @ Tj = 25°C ID = 18A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features • •
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APTM100H45ST
JESD24-1.
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Untitled
Abstract: No abstract text available
Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN30N100L = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTN30N100L
E153432
30N100L
5-07-A
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Untitled
Abstract: No abstract text available
Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OCR Scan
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OM9027SP1
OM9029SP1
OM9Q28SP1
OM9030SP1
300/jsec,
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POWER MOSFET Rise Time 1000V NS
Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package
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OCR Scan
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OM9027SP1
OM9029SP1
OM9Q28SP1
OM9030SP1
300/jsec,
100-TYP.
205Crawford
00011b3
POWER MOSFET Rise Time 1000V NS
MOSFET 1000v 30a
inverter circuit 200v to 100v
mosfet 10a 500v
mosfet 400 V 10A
OM9028SP1
OM9030SP1
OM9Q27SP1
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Untitled
Abstract: No abstract text available
Text: OM6034NM OM6036NM OM6Û35NM OM6Q37NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • Surface Mount Hermetic Package • High Current/Low RDS on • Fast Switching, Low Drive Current
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OCR Scan
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OM6034NM
OM6036NM
OM6Q37NM
MIL-S-19500,
300/isec,
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OM6034NM
Abstract: OM6035NM OM6036NM OM6106
Text: OM6034NM OM6036NM OM6Q35NM OM6Q37NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Am p, N-Channel MOSFET In A S urface M ount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current
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OCR Scan
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OM6Q35NM
OM6036NM
OM6Q37NM
MIL-S-19500,
300/isec,
534-5776FAX
OM6034NM
OM6035NM
OM6106
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Untitled
Abstract: No abstract text available
Text: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thr u 1000V, Up To 30 Am p, N-Channel MOSFET In A Surface M o u n t Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current
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OCR Scan
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OM6034NM
OM6036NM
OM6035NM
OM6037NM
MIL-S-19500,
300/jsec,
014S3
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PDF
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Untitled
Abstract: No abstract text available
Text: OM9Û27SP1 OM9 29SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30 A Power M O S F E T And High Spee d Rectifier In On e Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OCR Scan
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27SP1
29SP1
OM9Q28SP1
OM9030SP1
OM9027SP1
OM9028SPCurrent'
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5N100C
Abstract: fast recovery 30amp fast recovery 35amp OM15N50C OM30N20C OM35N10C OM5N100C 1000v 35amp
Text: O M NIREL CORP IM E 0 1 ^ ^ 0 7 3 0 0 0 0 2 1 ,4 M I " OM35N10C OM15N50C QM30N20C OM5N1QOC POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE T ^ 3 100V Thru 1000V, Up To 35 Amp, N-Channel MOSFET With Low RDS(qn Characteristics > FEATURES Isolated Hermetic Metal Package
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OCR Scan
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fl1Q73
OM35N10C
OM15N50C
OM30N20C
OM5N100C
O-258AA
5N100C
fast recovery 30amp
fast recovery 35amp
OM15N50C
OM5N100C
1000v 35amp
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5N100C
Abstract: No abstract text available
Text: O M N IR E L CORP IM E 1 ^ ^ 0 7 3 0 0 0 0 2 1 ,4 M I " OM35N10C OM15N50C QM30N20C OM5N1QOC POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE T ^ 3 100V Thru 1000V, Up To 35 Amp, N-Channel MOSFET With Low RDS(qn Characteristics > FEATURES Isolated Hermetic Metal Package
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OCR Scan
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OM35N10C
OM15N50C
QM30N20C
O-258AA
5N100C
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OA 70 diode
Abstract: 1000v 35amp I222-00
Text: 0J1NIREL CORP 43E; ]> hTÔ^QÎB 0000526 1 « O M N I O M 35N 1Û C O M 15N 50C O M 30N 20C Q M 5N 100C POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE 100V Thru 1000V, Up To 35 Amp, N-Channe^ MOSFET With Low Rds ON> Characteristics». in FEATURES
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OCR Scan
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O-258AA
300/jsec,
OA 70 diode
1000v 35amp
I222-00
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