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    MOSFET 1000V 10A Search Results

    MOSFET 1000V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1000V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
    Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90711C O-254AA) IRFMG50 O-254AA. MIL-PRF-19500 mosfet 10a 800v MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50

    Untitled

    Abstract: No abstract text available
    Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90711C O-254AA) IRFMG50 O-254AA. MIL-PRF-19500

    IRFNG50

    Abstract: mosfet 10a 800v high power 91556A
    Text: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 1556A IRFNG50 IRFNG50 mosfet 10a 800v high power 91556A

    smd diode 39a

    Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
    Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 1555A IRFNG40 smd diode 39a mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a

    Untitled

    Abstract: No abstract text available
    Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90710B O-254AA) IRFMG40 O-254AA. MIL-PRF-19500

    mosfet 10a 800v

    Abstract: IRFMG50 mosfet 10a 800v high power IR rectifier diode 100A 800V
    Text: PD - 90711B POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 R DS(on) 2.0Ω ID 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90711B O-254AA) IRFMG50 IRHM57163SED IRHM57163SEU MIL-PRF-19500 mosfet 10a 800v IRFMG50 mosfet 10a 800v high power IR rectifier diode 100A 800V

    Untitled

    Abstract: No abstract text available
    Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 1555A IRFNG40

    IRFMG40

    Abstract: No abstract text available
    Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90710B O-254AA) IRFMG40 O-254AA. MIL-PRF-19500 IRFMG40

    MOSFET 1000v 30a

    Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
    Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    Original     		PDF OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 OM9027SP1 OM90Surge 300msec, MOSFET 1000v 30a 10A, 100v fast recovery diode OM9029SP1 OM9030SP1 diode 1000V 10a

    IRFAG30

    Abstract: No abstract text available
    Text: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG30 O-204AA/AE) IRFAG30

    Untitled

    Abstract: No abstract text available
    Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG50 O-204AA/AE)

    Untitled

    Abstract: No abstract text available
    Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG40 O-204AA/AE)

    IRFAG40

    Abstract: No abstract text available
    Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG40 O-204AA/AE) IRFAG40

    IRFAG50

    Abstract: No abstract text available
    Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG50 O-204AA/AE) electrical252-7105 IRFAG50

    MOSFET 800V 10A

    Abstract: 93973D IRHY7G30CMSE
    Text: PD - 93973D RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		PDF 93973D O-257AA) IRHY7G30CMSE IRHY7G30CMSE MIL-STD-750, MlL-STD-750, O-257AA MOSFET 800V 10A 93973D

    APT0502

    Abstract: microsemi mosfet 1000V linear mosfet
    Text: APTML100U60R020T1AG Linear MOSFET Power Module VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML100U60R020T1AG APT0502 microsemi mosfet 1000V linear mosfet

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A APT0502
    Text: APTML100U60R020T1AG Linear MOSFET Power Module VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML100U60R020T1AG mosfet 10a 800v MOSFET 800V 10A APT0502

    thermistor R55

    Abstract: APT0502 mosfet 10a 800v high power sensor ptc
    Text: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML1002U60R020T3AG thermistor R55 APT0502 mosfet 10a 800v high power sensor ptc

    MOSFET 800V 10A

    Abstract: IRHY7G30CMSE
    Text: PD - 93973C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		PDF 93973C O-257AA) IRHY7G30CMSE IRHY7G30CMSE MIL-STD-750, MlL-STD-750, O-257AA MOSFET 800V 10A

    Untitled

    Abstract: No abstract text available
    Text: PD - 93973 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		PDF O-257AA) IRHY7G30CMSE

    APT0502

    Abstract: No abstract text available
    Text: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML1002U60R020T3AG APT0502

    Untitled

    Abstract: No abstract text available
    Text: PD - 93973B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		PDF 93973B O-257AA) IRHY7G30CMSE

    10N100P

    Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions


    Original     		PDF IXFH10N100P IXFV10N100P IXFV10N100PS 300ns PLUS220 10N100P 10N100P IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    OCR Scan     		PDF OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec,